BDW84C Equivalent & Substitute Parts

Part Overview

The BDW84C is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 100 V collector-emitter breakdown voltage and 15 A maximum collector current in a TO-218 through-hole package. This component is classified as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and production continuity. The 130 W power dissipation rating and PNP configuration establish the baseline requirements for substitute part selection.

Substiute Parts

BDW84C
Central Semiconductor CorpIn Stock: 7401BDW84C Datasheet
BDW84C
Current Part
BDW47G
onsemiIn Stock: 3963BDW47G Datasheet
BDW47G
MFR Recommended

Key Parameters

Parameter Value
Transistor Type PNP
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 100 V
DC Current Gain (hFE) (Min) 750 @ 6A, 3V
Power - Max 130 W
Mounting Type Through Hole
Package / Case TO-218-3
Product Status Obsolete
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitute parts for the BDW84C are selected based on the following electrical and mechanical criteria:

Primary Matching Criteria:

  • Transistor configuration: PNP topology
  • Maximum collector current: 15 A minimum rating
  • Collector-emitter breakdown voltage: 100 V minimum rating
  • Through-hole mounting compatibility
  • Power dissipation capability: 130 W or greater

Secondary Considerations:

  • DC current gain (hFE) characteristics
  • Package form factor (TO-218 or TO-220 compatible with application PCB layout)
  • Product availability and compliance status

The BDW47G qualifies as a substitute based on matching the primary electrical parameters (15 A, 100 V) and through-hole mounting requirement. The BDW47G is a PNP Darlington configuration, which affects gain characteristics but maintains voltage and current ratings within acceptable substitution parameters.

Parameter Comparison

Parameter BDW84C BDW47G
Manufacturer Central Semiconductor Corp onsemi
Transistor Type PNP PNP - Darlington
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
DC Current Gain (hFE) (Min) 750 @ 6A, 3V 1000 @ 5A, 4V
Power - Max 130 W 85 W
Frequency - Transition Not specified 4 MHz
Operating Temperature Not specified -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-218-3 TO-220-3
Product Status Obsolete Obsolete
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

BDW47G Substitution Considerations:

The BDW47G maintains electrical equivalence for collector current (15 A) and collector-emitter breakdown voltage (100 V). However, the following differences require circuit evaluation:

  1. Package Transition: The BDW47G uses TO-220-3 packaging versus the BDW84C TO-218-3 package. PCB layout modifications may be necessary to accommodate the different pin spacing and thermal characteristics.

  2. Power Dissipation: The BDW47G maximum power rating is 85 W, compared to 130 W for the BDW84C. Applications requiring sustained power dissipation above 85 W require thermal management verification or alternative component selection.

  3. Darlington Configuration: The BDW47G Darlington topology provides higher DC current gain (1000 vs. 750 minimum), which affects base drive requirements and switching characteristics. Circuit designs dependent on specific gain characteristics require validation.

  4. Compliance Status: The BDW47G is ROHS3 compliant, whereas the BDW84C is RoHS non-compliant. This distinction is relevant for applications subject to RoHS regulatory requirements.

  5. Product Status: Both components are classified as obsolete. Long-term availability should be confirmed with component suppliers before design commitment.

Frequently Asked Questions (FAQ)

Q: Can the BDW47G directly replace the BDW84C without circuit modification?

A: Electrical substitution is possible for applications where collector current does not exceed 15 A and collector-emitter voltage remains below 100 V. However, the Darlington configuration and different gain characteristics require circuit validation. Package differences (TO-220 vs. TO-218) necessitate PCB layout review.

Q: What is the significance of the Darlington configuration in the BDW47G?

A: The Darlington topology combines two transistor stages internally, resulting in higher DC current gain (1000 minimum vs. 750 minimum for the BDW84C). This affects base drive current requirements and switching speed. Applications with specific gain or frequency requirements must be re-evaluated.

Q: Is the 85 W power rating of the BDW47G sufficient for BDW84C applications?

A: The BDW47G 85 W maximum power rating is lower than the BDW84C 130 W rating. Applications operating near or above 85 W power dissipation require thermal analysis and may necessitate enhanced heat sinking or alternative component selection.

Q: What are the package compatibility implications?

A: The BDW84C uses TO-218-3 packaging while the BDW47G uses TO-220-3 packaging. Both are through-hole packages with different pin configurations and thermal characteristics. PCB footprint modifications are required for substitution.

Q: Does RoHS compliance status affect substitution decisions?

A: RoHS compliance is a regulatory and supply chain consideration. The BDW47G ROHS3 compliance versus BDW84C non-compliance may be relevant for applications subject to RoHS directives. This does not affect electrical substitution capability but influences procurement and regulatory compliance.

Q: Are there additional substitute options beyond BDW47G?

A: The BDW47G documentation references TIP147T and TIP107G as additional substitutes. These alternatives should be evaluated against the same electrical and mechanical criteria established for the BDW84C substitution analysis.

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