BDW84C Equivalent & Substitute Parts

Part Overview

The BDW84C is a PNP Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 15 A maximum collector current in a TO-218-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and power dissipation while accommodating package and compliance variations.

Substiute Parts

BDW84C

STMicroelectronicsIn Stock: 7340BDW84C Datasheet

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TIP147

NTE Electronics, IncIn Stock: 15234TIP147 Datasheet

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MJH11017G

onsemiIn Stock: 1131MJH11017G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BDW84C are evaluated based on the following critical parameters that determine functional equivalence:

Primary Compatibility Criteria:

• Transistor Type: PNP configuration (standard or Darlington topology)
• Current Rating: Minimum 15 A collector current capacity
• Voltage Rating: Minimum 100 V collector-emitter breakdown voltage
• Power Dissipation: Minimum 125 W power rating
• Mounting: Through-hole configuration
• Package Compatibility: TO-218 series packages

Substitution Logic: The TIP147 maintains the core PNP topology and 100 V voltage rating with 10 A current capacity, representing a partial current derating. The MJH11017G provides enhanced voltage rating (150 V) and maintains full 15 A current capacity with Darlington configuration, operating in a different package form factor (TO-247-3). Both substitutes are active products with current manufacturing status, addressing the obsolescence of the BDW84C.

Parameter Comparison

Engineering Selection Recommendations

MJH11017G (Recommended Primary Substitute): The MJH11017G is the preferred substitute for direct replacement applications. This device maintains identical Darlington topology, achieves full 15 A current capacity, and exceeds the voltage rating at 150 V. Power dissipation capability is increased to 150 W. The part is manufactured by onsemi with active product status and ROHS3 compliance. The primary design consideration is package transition from TO-218-3 to TO-247-3, which requires PCB layout modification but provides superior thermal characteristics. This substitute is suitable for applications requiring the original performance envelope with enhanced reliability margins.

TIP147 (Secondary Substitute for Current-Reduced Applications): The TIP147 provides an alternative for applications where collector current requirements do not exceed 10 A. This device maintains the 100 V voltage rating and TO-218-3 package compatibility, eliminating layout redesign. However, the TIP147 is RoHS non-compliant, which may restrict use in regulated environments. The standard PNP topology differs from the Darlington configuration of the BDW84C, resulting in lower DC current gain (1000 @ 5A, 4V versus 750 @ 6A, 3V). This substitute is applicable only when current derating is acceptable and RoHS compliance is not mandated.

Frequently Asked Questions (FAQ)

Q: Can the TIP147 directly replace the BDW84C in all applications?

A: The TIP147 is not a complete substitute for all applications. While it maintains the 100 V voltage rating and TO-218-3 package, the maximum collector current is reduced to 10 A compared to the BDW84C's 15 A rating. Applications requiring the full 15 A capacity must use the MJH11017G. Additionally, the TIP147 is RoHS non-compliant, which may conflict with regulatory requirements.

Q: What are the package differences between the MJH11017G and BDW84C?

A: The BDW84C uses a TO-218-3 package, while the MJH11017G uses a TO-247-3 package. Both are through-hole configurations with three leads, but the TO-247-3 has a larger footprint and improved thermal dissipation characteristics. PCB layout and mounting hardware modifications are required for substitution.

Q: Does the MJH11017G provide better performance than the BDW84C?

A: The MJH11017G provides enhanced voltage rating (150 V versus 100 V) and increased power dissipation capability (150 W versus 130 W). Both devices maintain 15 A current capacity and identical saturation voltage characteristics. The MJH11017G is suitable for applications requiring higher voltage margins or improved thermal performance.

Q: Are there compliance differences between the substitute parts?

A: Yes. The BDW84C and MJH11017G are both ROHS3 compliant. The TIP147 is RoHS non-compliant. For applications subject to RoHS regulations, only the MJH11017G is acceptable as a substitute.

Q: What is the DC current gain difference between these devices?

A: The BDW84C specifies 750 hFE minimum at 6 A and 3 V. The TIP147 specifies 1000 hFE minimum at 5 A and 4 V. The MJH11017G specifies 400 hFE minimum at 10 A and 5 V. Current gain varies with operating point; selection depends on circuit bias requirements.

Q: Can the MJH11017G be used in existing PCB designs without modification?

A: No. The TO-247-3 package has different lead spacing and mounting hole positions compared to the TO-218-3 package. PCB redesign is required. However, the TO-218-3 compatible TIP147 can be used as a direct footprint replacement if current derating to 10 A is acceptable.