BDW83B Equivalent & Substitute Parts

Part Overview

The BDW83B is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for high-current switching and amplification applications. Specified as an 80 V, 15 A device in TO-218 through-hole packaging with a maximum power dissipation of 130 W, the BDW83B is classified as obsolete. Due to its obsolete status and limited availability from original sources, identification of functionally equivalent substitute components is necessary for design continuity and procurement flexibility.

Substiute Parts

BDW83B
Central Semiconductor CorpIn Stock: 1123BDW83B Datasheet
BDW83B
Current Part
2STW100
STMicroelectronicsIn Stock: 12502STW100 Datasheet
2STW100
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 15 A
Collector-Emitter Breakdown Voltage (Max) 80 V
Power Dissipation (Max) 130 W
DC Current Gain (hFE Min) 750 @ 6A, 3V
Mounting Type Through Hole
Package TO-218-3
RoHS Status Non-compliant

Substitute Part Grouping Explanation

Substitute identification for the BDW83B is based on the following electrical and mechanical parameters:

Primary Matching Criteria:

  • Collector-Emitter Breakdown Voltage: 80 V (exact match required)
  • Power Dissipation: 130 W (equal or greater)
  • Mounting Type: Through Hole
  • Transistor Polarity: NPN

Secondary Compatibility Factors:

  • Collector Current Rating: 15 A minimum (equal or greater acceptable)
  • Package Type: TO-218 or compatible high-power through-hole packages
  • DC Current Gain: Sufficient for intended switching or amplification function

The 2STW100 qualifies as a substitute based on matching the 80 V breakdown voltage and 130 W power rating. While the 2STW100 is a Darlington configuration with higher current capability (25 A) and different gain characteristics, it maintains electrical compatibility within the specified voltage and power envelope. Package differences (TO-247-3 versus TO-218-3) require mechanical verification for board layout compatibility.

Parameter Comparison

Parameter BDW83B 2STW100 Unit
Manufacturer Central Semiconductor Corp STMicroelectronics
Transistor Type NPN NPN - Darlington
Collector Current (Max) 15 25 A
Collector-Emitter Breakdown Voltage (Max) 80 80 V
Power Dissipation (Max) 130 130 W
DC Current Gain (hFE Min) 750 @ 6A, 3V 500 @ 10A, 3V
Mounting Type Through Hole Through Hole
Package / Case TO-218-3 TO-247-3
Product Status Obsolete Obsolete
RoHS Status Non-compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Compliance Considerations:

The BDW83B is RoHS non-compliant and obsolete. The 2STW100 substitute is ROHS3 compliant, making it suitable for applications subject to RoHS directives. Both components are REACH unaffected and classified under ECCN EAR99.

Electrical Compatibility:

The 2STW100 maintains the 80 V breakdown voltage and 130 W power rating of the BDW83B. The higher collector current rating (25 A versus 15 A) does not create incompatibility; circuits designed for 15 A operation function within the 2STW100 specification envelope. The Darlington configuration of the 2STW100 results in lower DC current gain (500 versus 750 at comparable test conditions), which may affect base drive requirements in switching applications.

Mechanical Compatibility:

Package transition from TO-218-3 to TO-247-3 requires verification of printed circuit board layout, mounting hole spacing, and thermal management provisions. Both packages are through-hole; however, pin configuration and physical dimensions differ.

Inventory and Availability:

The 2STW100 has 1231 units in stock versus 1071 units for the BDW83B, providing improved procurement availability.

Frequently Asked Questions (FAQ)

Q: Can the 2STW100 directly replace the BDW83B without circuit modification?

A: Electrical substitution is valid based on matching voltage and power ratings. However, the Darlington configuration and different current gain require verification of base drive circuitry. Physical package differences (TO-247-3 versus TO-218-3) necessitate board layout assessment.

Q: What is the significance of the Darlington configuration in the 2STW100?

A: The Darlington configuration integrates two transistor stages, resulting in higher current amplification but lower switching speed and higher saturation voltage. For DC switching applications, this is typically acceptable. For high-frequency applications, switching characteristics must be verified against circuit requirements.

Q: Are there thermal management differences between TO-218 and TO-247 packages?

A: Both packages are rated for 130 W maximum dissipation. TO-247-3 typically provides improved thermal performance due to larger die attachment area. Thermal interface material and mounting pressure specifications must be confirmed for the specific application.

Q: Why is RoHS compliance relevant for an obsolete component?

A: RoHS compliance affects procurement eligibility for new designs and applications subject to regulatory requirements. The 2STW100's ROHS3 compliance makes it suitable for regulated markets, whereas the BDW83B's non-compliance restricts its use in such applications.

Q: Can the 2STW100 be used in applications requiring the full 15 A rating of the BDW83B?

A: Yes. The 2STW100 is rated for 25 A maximum collector current, exceeding the 15 A requirement. Circuits designed for 15 A operation remain within safe operating limits.

Q: What should be verified before implementing the 2STW100 as a substitute?

A: Verify base drive circuit compatibility with the Darlington gain characteristics, confirm PCB layout accommodates TO-247-3 package dimensions, validate thermal management for the application, and test saturation voltage performance in switching circuits if critical to system function.

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