BDW47G Equivalent & Substitute Parts

Part Overview

The BDW47G is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 15 A maximum collector current in a TO-220-3 through-hole package. This component is classified as obsolete, necessitating identification of active substitute parts that maintain electrical and mechanical compatibility for existing designs or new production requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	15	A
DC Current Gain (hFE) (Min)	1000	@ 5A, 4V
Vce Saturation (Max)	3	V @ 50mA, 10A
Power - Max	85	W
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature Range	-55 to 150	°C (TJ)

Substitute Part Grouping Explanation

Substitution eligibility for the BDW47G is determined by the following critical parameters:

Transistor Type: Must be PNP - Darlington configuration
Voltage Rating: Collector-emitter breakdown voltage must be 100 V or greater
Current Rating: Collector current (Ic) must meet or exceed the application requirement
Package: Must be TO-220-3 through-hole configuration
DC Current Gain: Minimum hFE of 1000 at specified conditions
Vce Saturation: Must be compatible with circuit switching requirements

The identified substitute parts TIP147T and TIP107G satisfy the core electrical and mechanical compatibility criteria. However, differences in maximum current ratings and power dissipation capabilities create distinct substitution scenarios based on application requirements.

Parameter Comparison

Parameter	BDW47G (Main)	TIP147T	TIP107G
Manufacturer	onsemi	STMicroelectronics	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Current - Collector (Ic) (Max)	15 A	10 A	8 A
DC Current Gain (hFE) (Min)	1000 @ 5A, 4V	1000 @ 5A, 4V	1000 @ 3A, 4V
Vce Saturation (Max)	3 V @ 50mA, 10A	3 V @ 40mA, 10A	2.5 V @ 80mA, 8A
Current - Collector Cutoff (Max)	2 mA	2 mA	50 µA
Power - Max	85 W	90 W	2 W
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
Operating Temperature Range	-55 to 150 °C	150 °C	-65 to 150 °C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

TIP147T (STMicroelectronics)

The TIP147T is the primary substitute for the BDW47G in applications requiring maximum current ratings between 10 A and 15 A. This part maintains electrical equivalence across all critical parameters: 100 V breakdown voltage, 1000 minimum hFE, and 3 V Vce saturation at 10 A. The TIP147T delivers 90 W maximum power dissipation, closely matching the BDW47G specification of 85 W. Active product status and ROHS3 compliance ensure long-term availability and regulatory conformance. The TIP147T is suitable for direct replacement in designs where collector current does not exceed 10 A.

TIP107G (onsemi)

The TIP107G serves as a substitute for applications with reduced current requirements not exceeding 8 A. While maintaining the 100 V voltage rating and TO-220-3 package configuration, the TIP107G exhibits significantly lower power dissipation (2 W maximum) compared to the BDW47G (85 W). This part is appropriate for low-power switching applications but is unsuitable for high-power linear amplification or high-current switching circuits. The TIP107G offers the widest operating temperature range (-65°C to 150°C) among the available substitutes.

Both substitute parts carry active product status, ensuring continued manufacturing and supply chain availability. Selection between TIP147T and TIP107G depends on application current and power requirements.

Frequently Asked Questions (FAQ)

Q: Can the TIP147T directly replace the BDW47G in all applications?

A: The TIP147T is electrically compatible with the BDW47G for applications where collector current does not exceed 10 A. The BDW47G is rated for 15 A maximum, while the TIP147T is rated for 10 A. Applications requiring sustained collector currents above 10 A require circuit redesign or alternative components.

Q: What is the primary difference between TIP147T and TIP107G?

A: The TIP147T is rated for 10 A collector current and 90 W power dissipation, making it suitable for moderate-power applications. The TIP107G is rated for 8 A collector current and only 2 W power dissipation, limiting its use to low-power switching circuits. The TIP147T is the closer electrical equivalent to the BDW47G.

Q: Are all three parts available in the same package?

A: Yes. The BDW47G, TIP147T, and TIP107G are all housed in TO-220-3 through-hole packages, ensuring mechanical compatibility and identical PCB footprints.

Q: Do the substitute parts meet the same regulatory requirements as the BDW47G?

A: Yes. Both TIP147T and TIP107G are ROHS3 compliant and REACH unaffected, matching the regulatory status of the BDW47G.

Q: What is the minimum DC current gain for these parts?

A: All three parts maintain a minimum DC current gain (hFE) of 1000. The BDW47G and TIP147T specify this gain at 5 A and 4 V, while the TIP107G specifies it at 3 A and 4 V.

Q: Can the TIP107G replace the BDW47G in high-power applications?

A: No. The TIP107G maximum power dissipation is 2 W, compared to 85 W for the BDW47G. The TIP107G is unsuitable for applications requiring sustained power dissipation above 2 W.

Q: What is the Vce saturation difference between these parts?

A: The BDW47G and TIP147T both specify 3 V Vce saturation at 50 mA base current and 10 A collector current. The TIP107G specifies 2.5 V saturation at 80 mA base current and 8 A collector current, indicating lower saturation voltage at lower current levels.

Q: Which substitute offers the widest operating temperature range?

A: The TIP107G operates from -65°C to 150°C, providing the widest temperature range. The BDW47G operates from -55°C to 150°C, and the TIP147T specification indicates 150°C maximum junction temperature.

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