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BDW46 Equivalent & Substitute Parts
Part Overview
The BDW46 is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 15 A maximum collector current in a Through Hole TO-220-3 package. This component is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The BDW46 delivers 85 W maximum power dissipation with a DC current gain minimum of 1000 at specified operating conditions, suitable for switching and amplification applications requiring moderate power levels.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP - Darlington | — |
| Current - Collector (Ic) (Max) | 15 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 50mA, 10A | — |
| Current - Collector Cutoff (Max) | 2 | mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | — |
| Power - Max | 85 | W |
| Frequency - Transition | 4 | MHz |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
| Product Status | Obsolete | — |
| RoHS Status | RoHS non-compliant | — |
Substitute Part Grouping Explanation
Substitution of the BDW46 is determined by electrical and mechanical compatibility within the PNP Darlington transistor category. The primary substitution criteria are:
Electrical Parameters:
- Transistor topology: PNP - Darlington configuration
- Collector-emitter breakdown voltage rating equal to or greater than 80 V
- Maximum collector current rating equal to or greater than 15 A
- DC current gain (hFE) minimum of 1000 or higher at specified bias conditions
- Collector cutoff current (Icbo) at 2 mA or lower
- Vce saturation characteristics compatible with switching applications
Mechanical Parameters:
- Package type: TO-220-3 (Through Hole)
- Thermal characteristics suitable for 85 W power dissipation or greater
Compliance Considerations:
- Product status: Active or current production preferred for long-term availability
- RoHS compliance status for regulatory alignment
The TIP147T meets the electrical requirements for substitution with enhanced voltage rating (100 V) and active product status, though with reduced maximum collector current (10 A) relative to the BDW46 specification.
Parameter Comparison
| Parameter | BDW46 (onsemi) | TIP147T (STMicroelectronics) | Compatibility Notes |
|---|---|---|---|
| Transistor Type | PNP - Darlington | PNP - Darlington | Identical topology |
| Current - Collector (Ic) (Max) | 15 A | 10 A | TIP147T rated lower; suitable for applications ≤10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 100 V | TIP147T provides higher voltage margin |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 50mA, 10A | 3V @ 40mA, 10A | Comparable saturation characteristics |
| Current - Collector Cutoff (Max) | 2 mA | 2 mA | Identical leakage specification |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | 1000 @ 5A, 4V | Identical gain specification |
| Power - Max | 85 W | 90 W | TIP147T provides higher power rating |
| Frequency - Transition | 4 MHz | Not specified | BDW46 specification provided; TIP147T data not available |
| Operating Temperature Range | -55 to 150°C (TJ) | 150°C (TJ) | BDW46 extends to -55°C; TIP147T minimum not specified |
| Package / Case | TO-220-3 | TO-220-3 | Identical package; pin-compatible |
| Mounting Type | Through Hole | Through Hole | Identical mounting technology |
| Product Status | Obsolete | Active | TIP147T in current production |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | TIP147T meets current RoHS requirements |
Engineering Selection Recommendations
Primary Substitute: TIP147T (STMicroelectronics)
The TIP147T is the qualified substitute for the BDW46 based on the following engineering criteria:
-
Electrical Compatibility: Both devices are PNP Darlington transistors with identical DC current gain specifications (1000 @ 5A, 4V) and collector cutoff current (2 mA). The TIP147T provides a higher collector-emitter breakdown voltage (100 V vs. 80 V), offering improved voltage margin for circuit protection.
-
Current Rating Consideration: The TIP147T maximum collector current is 10 A, compared to the BDW46 rating of 15 A. Applications requiring collector currents between 10 A and 15 A require circuit redesign or alternative component selection.
-
Power Dissipation: The TIP147T power rating (90 W) exceeds the BDW46 specification (85 W), providing adequate thermal headroom for equivalent applications.
-
Package Compatibility: Both devices use the TO-220-3 Through Hole package with identical pinout, enabling direct mechanical substitution without PCB redesign.
-
Product Status and Compliance: The TIP147T is in active production with ROHS3 compliance, ensuring long-term availability and regulatory alignment for new designs. The BDW46 obsolete status necessitates substitution for ongoing procurement.
-
Saturation Characteristics: Vce saturation values are comparable (3V @ specified bias conditions), maintaining switching performance in typical applications.
Application Scope: The TIP147T substitution is valid for applications operating at collector currents of 10 A or less. Designs requiring the full 15 A capability of the BDW46 require alternative component evaluation outside the provided substitute list.
Frequently Asked Questions (FAQ)
Q: Can the TIP147T directly replace the BDW46 in all applications?
A: Direct replacement is valid for applications operating at collector currents of 10 A or less. The TIP147T maximum collector current rating (10 A) is lower than the BDW46 specification (15 A). Applications requiring sustained collector currents between 10 A and 15 A require circuit redesign or alternative component selection.
Q: What are the key electrical differences between the BDW46 and TIP147T?
A: Both devices share identical PNP Darlington topology and DC current gain specifications (1000 @ 5A, 4V). The TIP147T provides higher collector-emitter breakdown voltage (100 V vs. 80 V) and power rating (90 W vs. 85 W). The primary limitation is the reduced maximum collector current (10 A vs. 15 A).
Q: Are the BDW46 and TIP147T pin-compatible?
A: Yes. Both devices use the TO-220-3 Through Hole package with identical pinout (Base, Collector, Emitter). No PCB modification is required for mechanical substitution.
Q: Why is the BDW46 listed as obsolete?
A: The BDW46 is no longer in active production by onsemi. The TIP147T from STMicroelectronics provides equivalent electrical functionality with active product status and current RoHS compliance.
Q: Does the TIP147T meet RoHS requirements?
A: Yes. The TIP147T is ROHS3 compliant. The BDW46 is RoHS non-compliant. For applications requiring RoHS compliance, the TIP147T is the appropriate selection.
Q: What is the operating temperature range for the TIP147T?
A: The TIP147T maximum junction temperature is 150°C. The minimum operating temperature is not specified in the provided data. The BDW46 specifies an operating range of -55°C to 150°C (TJ). Applications requiring operation below 0°C require verification of TIP147T low-temperature performance specifications.
Q: Can I use the TIP147T in a circuit designed for 15 A collector current?
A: No. The TIP147T maximum collector current is 10 A. Using this device in a 15 A application exceeds its electrical rating and creates reliability risk. Circuit redesign or alternative component selection is required.
Q: What is the significance of the transition frequency specification?
A: The BDW46 specifies 4 MHz transition frequency, indicating switching speed capability. The TIP147T transition frequency is not provided in the available data. For high-frequency switching applications, verification of TIP147T frequency response is necessary.
Q: Are there any thermal considerations when substituting the BDW46 with the TIP147T?
A: Both devices are rated for 150°C maximum junction temperature and use the same TO-220-3 package. The TIP147T power rating (90 W) exceeds the BDW46 specification (85 W), providing equivalent or improved thermal performance. Heatsinking requirements depend on circuit power dissipation, not component selection.
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