Equivalent & Substitute Parts for BDV64-S

Part Overview

BDV64-S is a PNP Darlington Bipolar Junction Transistor (BJT) manufactured by Bourns Inc. It features a collector-emitter breakdown voltage of 60V, a maximum collector current of 12A, and comes in a SOT-93 (TO-218-3) through-hole package. This model is now listed as obsolete. For design continuity and ongoing production, finding suitable alternative models based on strictly matched electrical and mechanical parameters is essential.

Key Parameters

Parameter	Value
Manufacturer Part Number	BDV64-S
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Current - Collector Cutoff (Max)	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Power - Max	3.5 W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-218-3
RoHS Status	ROHS3 Compliant
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for the BDV64-S are determined only by matching critical and explicitly provided parameters appropriate for the Transistors, Bipolar (BJT) category. These include transistor type, maximum collector current, maximum collector-emitter breakdown voltage, saturation voltage at specified base/collector current, cutoff current, minimum DC current gain, maximum power dissipation, operating temperature range, mounting type, and package/case. Substitute candidates must comply with these criteria and must have appropriate compliance certifications where specified.

Parameter Comparison

Parameter	BDV64-S (Bourns Inc.)	BDV64BG (onsemi)
Transistor Type	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	12 A	10 A
Voltage - Collector Emitter Breakdown (Max)	60 V	100 V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A	2V @ 20mA, 5A
Current - Collector Cutoff (Max)	2mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	1000 @ 5A, 4V
Power - Max	3.5 W	125 W
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-218-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active

Engineering Selection Recommendations

Substituting BDV64-S is necessitated by its obsolete product status. BDV64BG meets provided RoHS compliance requirements and is currently listed as active. Packaging differs, with BDV64-S using TO-218-3 and BDV64BG using TO-247-3; ensure compatibility with existing PCB or mechanical layouts. RoHS and product lifecycle status support continued component sourcing.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters must be matched for substitution in this transistor category?
A1: Substitute transistor selection is based on transistor type, collector current, collector-emitter breakdown voltage, saturation voltage, cutoff current, DC current gain, operating temperature, and power dissipation as provided.

Q2: Does package type affect substitution compatibility?
A2: Yes, package type (TO-218-3 vs. TO-247-3) affects mechanical fit in the application and must match design or be evaluated based on existing mounting provisions.

Q3: Are compliance certifications required for substitute selection?
A3: RoHS compliance is provided for both BDV64-S and BDV64BG; selection must consider specified certifications to maintain regulatory conformity.

Q4: Can active status impact component selection for new designs?
A4: Yes, active status ensures continued availability for sourcing and production, as opposed to obsolete components.

Q5: Is current rating a substitution constraint?
A5: Yes, maximum collector current is a critical parameter and must be matched with application requirements and provided specifications for substitute selection.

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