BDV64B-S Equivalent & Substitute Parts Reference

Part Overview

The BDV64B-S is a Bipolar Junction Transistor (BJT), specifically a PNP Darlington, with a maximum collector-emitter voltage of 100V and a maximum collector current of 12A. It is packaged in a SOT-93 (TO-218-3) through-hole format and provides a minimum DC gain (hFE) of 1000 at 5A/4V, with a maximum power dissipation of 3.5W. The BDV64B-S is now obsolete, necessitating the identification of alternative models that precisely match required parameters for compatible circuit integration and maintenance.

Key Parameters

Parameter	Value
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100 V
Current - Collector (Ic) (Max)	12 A
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Current - Collector Cutoff (Max)	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Power - Max	3.5 W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-218-3
Supplier Device Package	SOT-93

Substitute Part Grouping Explanation

Substitution is based strictly on matching the following key parameters: transistor type (PNP Darlington), maximum voltage and current ratings, Vce saturation, collector cutoff current, minimum DC gain, power dissipation, operating temperature range, mounting type, and package specifications. Only parts that explicitly satisfy these criteria based on provided values are considered equivalent or direct substitutes.

Parameter Comparison

Parameter	BDV64B-S (Bourns Inc.)	BDV64BG (onsemi)
Transistor Type	PNP - Darlington	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Current - Collector (Ic) (Max)	12 A	10 A
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A	2V @ 20mA, 5A
Current - Collector Cutoff (Max)	2mA	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	1000 @ 5A, 4V
Power - Max	3.5 W	125 W
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-218-3	TO-247-3

Engineering Selection Recommendations

The BDV64B-S is listed as obsolete. Its substitute, BDV64BG (onsemi), is listed as active with ROHS3 compliance and is REACH unaffected. Both the BDV64B-S and BDV64BG are compliant with RoHS3 and have ECCN: EAR99 and HTSUS: 8541.29.0095 classifications. Selection can be based on the availability status and compliance data explicitly provided for each part.

Frequently Asked Questions (FAQ)

Q1: What criteria determine substitution compatibility for transistor parts in this category?
A1: Substitution compatibility requires matching transistor type, maximum collector-emitter voltage, maximum collector current, Vce saturation, collector cutoff current, minimum DC current gain (hFE), power rating, operating temperature range, mounting type, and package/case.

Q2: Are there differences in package types between the BDV64B-S and BDV64BG?
A2: BDV64B-S uses a TO-218-3 (SOT-93) package, while BDV64BG uses a TO-247-3 package. Both are through-hole.

Q3: Is the BDV64BG considered a direct substitute for the BDV64B-S?
A3: BDV64BG is listed as a substitute based on matching electrical characteristics and compliance. The mounting type and most parameters are consistent with BDV64B-S.

Q4: What compliance standards do these transistors satisfy?
A4: Both parts are RoHS3 compliant. BDV64BG is also REACH unaffected. Both share the same ECCN and HTSUS codes.

Q5: Does the operating temperature range differ between the substitute and the original part?
A5: The operating temperature range is identical for both: -65°C to 150°C (TJ).

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message