BDV64B Equivalent & Substitute Parts

Part Overview

The BDV64B is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 100 V collector-emitter breakdown voltage and 12 A maximum collector current in a TO-218 through-hole package. This component is classified as obsolete, making identification of suitable substitute parts essential for ongoing design support and production continuity. The BDV64B delivers 125 W maximum power dissipation with a transition frequency of 60 MHz and minimum DC current gain of 1000 at 5 A collector current and 4 V collector-emitter voltage.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	12	A
Power - Max	125	W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	—
Frequency - Transition	60	MHz
Mounting Type	Through Hole	—
Package / Case	TO-218-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

The BDV64BG, manufactured by onsemi, is identified as a manufacturer-recommended substitute for the BDV64B. Substitution eligibility is determined by the following critical parameters:

Voltage Rating Compatibility: Both the BDV64B and BDV64BG maintain identical maximum collector-emitter breakdown voltage of 100 V, ensuring equivalent voltage stress capability in circuit applications.

Power Dissipation: Both parts are rated for 125 W maximum power dissipation, supporting equivalent thermal performance requirements.

DC Current Gain: Both parts specify minimum DC current gain of 1000 at 5 A collector current and 4 V collector-emitter voltage, ensuring comparable amplification characteristics.

Transistor Configuration: The BDV64B is a standard PNP transistor, while the BDV64BG is a PNP Darlington configuration. This represents a functional topology difference within the PNP family.

Current Rating Difference: The BDV64B supports 12 A maximum collector current, while the BDV64BG supports 10 A maximum collector current. This represents a 2 A reduction in current capacity.

Package Difference: The BDV64B uses TO-218-3 packaging, while the BDV64BG uses TO-247-3 packaging. Both are through-hole packages with different mechanical footprints and thermal characteristics.

Parameter Comparison

Parameter	BDV64B (Main Part)	BDV64BG (Substitute)	Match Status
Manufacturer	Central Semiconductor Corp	onsemi	Different
Transistor Type	PNP	PNP - Darlington	Different Configuration
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	Match
Current - Collector (Ic) (Max)	12 A	10 A	Reduced
Power - Max	125 W	125 W	Match
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	1000 @ 5A, 4V	Match
Frequency - Transition	60 MHz	Not Specified	Not Comparable
Package / Case	TO-218-3	TO-247-3	Different
Product Status	Obsolete	Active	Different
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Different

Engineering Selection Recommendations

Product Status Consideration: The BDV64B is classified as obsolete, while the BDV64BG is active. Selection of the BDV64BG provides access to an actively manufactured component with ongoing supply availability.

Compliance Status: The BDV64BG is ROHS3 compliant, whereas the BDV64B is RoHS non-compliant. Applications subject to RoHS regulatory requirements must use the BDV64BG.

Current Rating Verification: Circuit designs operating at collector currents exceeding 10 A cannot use the BDV64BG as a direct substitute due to its reduced maximum current rating of 10 A compared to the BDV64B's 12 A rating.

Package Footprint: PCB layout modifications are required when transitioning from TO-218-3 to TO-247-3 packaging. Thermal management characteristics differ between these packages and must be evaluated for the specific application.

Darlington Configuration: The BDV64BG employs Darlington topology, which affects base-emitter voltage characteristics and switching behavior compared to the standard PNP configuration of the BDV64B.

Frequently Asked Questions (FAQ)

Q: Can the BDV64BG directly replace the BDV64B in all applications?

A: The BDV64BG is suitable for applications where collector current does not exceed 10 A. Applications requiring the full 12 A capability of the BDV64B require alternative solutions. PCB layout modifications are necessary due to different package types (TO-218-3 versus TO-247-3).

Q: What is the significance of the Darlington configuration in the BDV64BG?

A: The BDV64BG uses Darlington topology, which consists of two transistor stages internally connected. This configuration provides higher current gain but affects base-emitter voltage saturation characteristics. The specified DC current gain of 1000 at 5 A and 4 V remains equivalent to the BDV64B.

Q: Are there compliance differences between these parts?

A: Yes. The BDV64B is RoHS non-compliant, while the BDV64BG is ROHS3 compliant. Applications subject to RoHS directives must use the BDV64BG.

Q: What thermal considerations apply when switching from TO-218-3 to TO-247-3 packaging?

A: Both packages are through-hole designs with different mechanical footprints and thermal interface characteristics. The TO-247-3 package typically provides different thermal resistance values. Thermal analysis specific to the application circuit is required.

Q: Is the 2 A reduction in maximum collector current a critical limitation?

A: This depends on circuit design requirements. If the application operates at or near 12 A, the BDV64BG cannot be used. If maximum operating current is 10 A or below, this parameter does not restrict substitution.

Q: What is the availability status of these parts?

A: The BDV64B is obsolete with 3786 pieces in stock. The BDV64BG is active with 1120 pieces in stock, providing ongoing supply continuity.

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