BDV64 Equivalent & Substitute Parts

Part Overview

The BDV64 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 60V collector-emitter breakdown voltage and 12A maximum collector current. This component is designed for through-hole mounting in the TO-218 package and delivers 125W maximum power dissipation with a transition frequency of 60MHz.

The BDV64 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this transistor.

Substiute Parts

BDV64
Central Semiconductor CorpIn Stock: 1074BDV64 Datasheet
BDV64
Current Part
2SB1351
Sanken Electric USA Inc.In Stock: 132372SB1351 Datasheet
2SB1351
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 12 A
Voltage - Collector Emitter Breakdown (Max) 60 V
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 5A, 4V
Power - Max 125 W
Frequency - Transition 60 MHz
Mounting Type Through Hole
Package / Case TO-218-3
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BDV64 is determined by strict alignment of electrical and mechanical parameters within the allowed tolerances for this product category. The following criteria establish valid substitute relationships:

Primary Electrical Parameters:

  • Collector current rating (Ic Max): 12A minimum
  • Collector-emitter breakdown voltage (Vce Max): 60V minimum
  • Transistor polarity: PNP configuration required

Secondary Electrical Parameters:

  • DC current gain (hFE): Must support specified operating points
  • Power dissipation capability: Adequate thermal performance for application

Mechanical Parameters:

  • Mounting type: Through-hole configuration
  • Package compatibility: Physical and electrical pin compatibility

The 2SB1351 qualifies as a substitute based on matching the primary electrical parameters (12A collector current, 60V breakdown voltage, PNP configuration) and through-hole mounting requirement. The 2SB1351 is a PNP Darlington variant, which represents a different internal topology but maintains electrical compatibility within the specified parameter envelope.

Parameter Comparison

Parameter BDV64 2SB1351 Unit
Manufacturer Central Semiconductor Corp Sanken Electric USA Inc.
Transistor Type PNP PNP - Darlington
Current - Collector (Ic) Max 12 12 A
Voltage - Collector Emitter Breakdown (Max) 60 60 V
DC Current Gain (hFE) Min 1000 @ 5A, 4V 2000 @ 10A, 4V
Power - Max 125 30 W
Frequency - Transition 60 130 MHz
Mounting Type Through Hole Through Hole
Package / Case TO-218-3 TO-220-3
RoHS Status RoHS non-compliant RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: Both the BDV64 and 2SB1351 are classified as obsolete components. Selection between these parts should account for inventory availability and long-term supply chain viability.

Compliance and Certification: The BDV64 is RoHS non-compliant, while the 2SB1351 is RoHS compliant. Applications subject to RoHS regulations or environmental compliance requirements should prioritize the 2SB1351.

Electrical Performance: The 2SB1351 demonstrates higher DC current gain (2000 vs. 1000) and transition frequency (130MHz vs. 60MHz), indicating improved switching characteristics. However, the 2SB1351 exhibits reduced maximum power dissipation (30W vs. 125W), which may limit suitability in high-power applications.

Package Consideration: The BDV64 uses TO-218 packaging, while the 2SB1351 uses TO-220F packaging. Physical board layout modifications may be required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the 2SB1351 directly replace the BDV64 in all applications?

A: The 2SB1351 matches the primary electrical parameters (12A collector current, 60V breakdown voltage, PNP polarity) required for substitution. However, the reduced power rating (30W vs. 125W) and different package type (TO-220F vs. TO-218) require verification of thermal and mechanical compatibility in the specific application circuit.

Q: What is the significance of the Darlington configuration in the 2SB1351?

A: The 2SB1351 employs a Darlington topology, which internally consists of two transistor stages. This configuration delivers higher current gain (2000 vs. 1000) and faster switching (130MHz vs. 60MHz) compared to the standard PNP structure of the BDV64. The Darlington configuration may introduce different saturation voltage characteristics and thermal behavior.

Q: Are there package compatibility issues between TO-218 and TO-220F?

A: TO-218 and TO-220F are distinct package types with different physical dimensions and pin configurations. Direct mechanical substitution on existing PCBs is not possible without board redesign or adapter solutions. Pin-to-pin electrical compatibility must be verified against the specific circuit schematic.

Q: How does the RoHS compliance difference affect component selection?

A: The BDV64 is RoHS non-compliant, while the 2SB1351 is RoHS compliant. Applications manufactured for markets with RoHS regulations must use compliant components. Legacy equipment repair may permit non-compliant parts depending on regulatory jurisdiction and end-use classification.

Q: What thermal considerations apply when substituting the 2SB1351 for the BDV64?

A: The 2SB1351 has a maximum power rating of 30W compared to the BDV64's 125W. Applications requiring sustained power dissipation above 30W may experience thermal stress with the 2SB1351. Thermal management design must be re-evaluated for the substitute component.

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