BDP950H6327XTSA1 Equivalent & Substitute Parts

Part Overview

The BDP950H6327XTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies, rated for 60 V collector-emitter breakdown voltage and 3 A maximum collector current. This surface mount device in SOT-223-4 package is designed for general-purpose switching and amplification applications. The part is currently in Last Time Buy status, indicating production discontinuation. Identifying equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	3	A
Vce Saturation (Max)	500 mV @ 200 mA, 2 A	—
Power - Max	5	W
Frequency - Transition	100	MHz
Operating Temperature (Max)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
RoHS Status	ROHS3 Compliant	—
MSL	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BDP950H6327XTSA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor polarity: PNP type required
Voltage rating: Minimum 60 V collector-emitter breakdown voltage
Current rating: Minimum 3 A collector current capacity
Package compatibility: Surface mount SOT-223 or TO-261 variants
Saturation characteristics: Vce(sat) performance at specified bias conditions
Frequency response: Transition frequency capability

Substitution Logic: Parts are grouped into three categories based on electrical compatibility with the BDP950H6327XTSA1:

Category 1 - Direct Electrical Equivalents (3 A, 60 V): Parts matching or exceeding the 3 A collector current and 60 V voltage rating with comparable saturation performance and frequency response. These parts provide pin-compatible replacement with equivalent or superior electrical performance.

Category 2 - Higher Current Capability (5-6 A, 60 V): Parts rated for 5-6 A collector current at 60 V breakdown voltage. These provide enhanced current handling capacity while maintaining voltage compatibility. Suitable for applications requiring additional current margin.

Category 3 - Reduced Current Capability (1-2 A, 60-70 V): Parts rated for 1-2 A collector current with 60-70 V voltage ratings. These are suitable only for applications where the 3 A requirement can be reduced or where lower power dissipation is beneficial.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) [A]	Vce(br) [V]	Vce(sat) [mV]	Power [W]	Freq [MHz]	Temp (Max) [°C]	Package	Status
BDP950H6327XTSA1	Infineon	3	60	500 @ 200mA, 2A	5	100	150	SOT-223-4	Last Time Buy
FZT751TA	Diodes Inc.	3	60	600 @ 300mA, 3A	2	140	150	SOT-223-3	Active
FZT751TC	Diodes Inc.	3	60	600 @ 300mA, 3A	2	140	150	SOT-223-3	Active
FZT751QTA	Diodes Inc.	3	60	600 @ 300mA, 3A	3	140	150	SOT-223-3	Active
FZT951TA	Diodes Inc.	5	60	460 @ 500mA, 5A	3	120	150	SOT-223-3	Active
NSV60600MZ4T1G	onsemi	6	60	350 @ 600mA, 6A	0.8	100	150	SOT-223	Active
NSS60600MZ4T1G	onsemi	6	60	350 @ 600mA, 6A	0.8	100	150	SOT-223	Active
FZT591TA	Diodes Inc.	1	60	600 @ 100mA, 1A	2	150	150	SOT-223-3	Active
BCP52TA	Diodes Inc.	1	60	500 @ 50mA, 500mA	2	125	150	SOT-223-3	Active
FZT792ATA	Diodes Inc.	2	70	500 @ 200mA, 2A	2	160	150	SOT-223-3	Active
PBSS5350Z,135	Nexperia	3	50	300 @ 200mA, 2A	2	100	150	SOT-223	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

The FZT751 series (FZT751TA, FZT751TC, FZT751QTA) from Diodes Incorporated are the preferred substitutes for the BDP950H6327XTSA1. These parts maintain the 3 A collector current rating and 60 V voltage specification. All three variants are in Active product status, ensuring long-term availability. The FZT751 series demonstrates superior transition frequency (140 MHz versus 100 MHz), providing enhanced high-frequency performance. All parts are ROHS3 compliant with MSL 1 rating, matching the original part's environmental specifications.

Secondary Substitutes (Higher Current Capability):

The FZT951TA (5 A, 60 V) and onsemi NSV60600MZ4T1G / NSS60600MZ4T1G (6 A, 60 V) provide increased collector current capacity while maintaining 60 V voltage rating. These are suitable for applications where additional current margin is required. The onsemi parts offer improved saturation characteristics (350 mV versus 500 mV at rated current), reducing power dissipation. All parts maintain Active status and full compliance certifications.

Alternative Substitutes (Reduced Current Applications):

The FZT591TA and BCP52TA are limited to 1 A collector current and should only be selected for applications where the 3 A requirement can be reduced. The FZT792ATA provides 2 A at an elevated 70 V rating, suitable for higher voltage applications with moderate current requirements.

Voltage-Reduced Alternative:

The PBSS5350Z,135 from Nexperia maintains 3 A current rating but is limited to 50 V collector-emitter breakdown voltage. This part is suitable only for applications where the 60 V specification can be reduced to 50 V.

All recommended substitutes are ROHS3 compliant, carry MSL 1 moisture sensitivity rating, and are classified as EAR99 for export control purposes, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can FZT751TA directly replace BDP950H6327XTSA1 in my circuit?

A: Yes. The FZT751TA maintains identical collector current (3 A) and voltage (60 V) ratings. Both use SOT-223 surface mount packages with compatible pinouts. The FZT751TA offers superior transition frequency (140 MHz versus 100 MHz). Verify that your PCB layout accommodates the SOT-223-3 package variant if the original design used SOT-223-4.

Q: What is the difference between FZT751TA, FZT751TC, and FZT751QTA?

A: All three variants share identical electrical specifications: 3 A collector current, 60 V voltage rating, and 140 MHz transition frequency. The differences are in packaging format (TA = Cut Tape & Digi-Reel, TC = Tape & Reel, QTA = Tape & Reel) and maximum power rating (TA/TC = 2 W, QTA = 3 W). Select based on your procurement and assembly requirements.

Q: Why would I choose NSV60600MZ4T1G over FZT751TA if both are 60 V rated?

A: The NSV60600MZ4T1G provides 6 A collector current capacity versus 3 A for FZT751TA. Select the onsemi part if your application requires higher current handling or if you need improved saturation characteristics (350 mV versus 600 mV). The trade-off is lower maximum power rating (800 mW versus 2 W).

Q: Can I use PBSS5350Z,135 as a substitute?

A: Only if your application can operate at 50 V collector-emitter breakdown voltage instead of 60 V. The PBSS5350Z,135 maintains 3 A current rating and offers superior saturation performance (300 mV), but the reduced voltage rating limits its use to lower-voltage circuits.

Q: What about FZT591TA and BCP52TA?

A: These parts are limited to 1 A maximum collector current, making them unsuitable for applications requiring the full 3 A capability of the BDP950H6327XTSA1. Use only if your circuit design can operate with reduced current capacity.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original BDP950H6327XTSA1 specifications.

Q: What is the impact of different Vce(sat) values between substitutes?

A: Vce(sat) determines saturation voltage drop and power dissipation in switching applications. Lower Vce(sat) reduces heat generation. The BDP950H6327XTSA1 specifies 500 mV at 200 mA, 2 A. FZT751 series specifies 600 mV at 300 mA, 3 A. The onsemi parts specify 350 mV at 600 mA, 6 A. Select based on your thermal budget and switching frequency requirements.

Q: Does transition frequency matter for my application?

A: Transition frequency (fT) indicates maximum useful operating frequency. The BDP950H6327XTSA1 specifies 100 MHz. Most substitutes offer equal or higher fT (FZT751 = 140 MHz, FZT951 = 120 MHz). Higher fT provides better high-frequency performance but is not required if your application operates below 100 MHz.

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