BD910 Equivalent & Substitute Parts

Part Overview

The BD910 is a PNP bipolar junction transistor manufactured by STMicroelectronics, housed in a TO-220-3 package for through-hole mounting applications. This device is rated for 80 V collector-emitter breakdown voltage and 15 A maximum collector current, with a maximum power dissipation of 90 W. The BD910 is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while meeting modern compliance standards.

Substiute Parts

BD910

STMicroelectronicsIn Stock: 2054BD910 Datasheet

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2N6491G

onsemiIn Stock: 102202N6491G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD910 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Transistor Type: PNP configuration
• Current - Collector (Ic) (Max): 15 A minimum
• Voltage - Collector Emitter Breakdown (Max): 80 V minimum
• Package / Case: TO-220-3
• Mounting Type: Through Hole

Compliance Parameters:

• RoHS3 Compliance
• REACH Unaffected status
• ECCN classification: EAR99

The 2N6491G manufactured by onsemi meets all mandatory electrical parameters and maintains full compliance with applicable regulations. While the 2N6491G exhibits differences in maximum power dissipation (1.8 W versus 90 W), transition frequency (5 MHz versus 3 MHz), and DC current gain specifications, these variations do not preclude substitution in applications where the BD910 was originally specified, provided circuit design accommodates the substitute device's thermal and frequency characteristics within the defined operating envelope.

Parameter Comparison

Engineering Selection Recommendations

The 2N6491G is an active-status substitute for the obsolete BD910. Both devices are ROHS3 compliant and REACH unaffected, ensuring regulatory compatibility in current manufacturing environments. The 2N6491G maintains identical collector current and breakdown voltage ratings, supporting direct functional replacement in TO-220-3 through-hole applications.

The 2N6491G provides an extended operating temperature range (−65°C to 150°C) compared to the BD910 (150°C maximum), offering improved thermal flexibility for applications requiring low-temperature operation. The higher DC current gain (20 versus 15 at 5 A, 4 V) and increased transition frequency (5 MHz versus 3 MHz) of the 2N6491G support improved switching performance in high-frequency circuit topologies.

The significant difference in maximum power dissipation (1.8 W for 2N6491G versus 90 W for BD910) reflects different thermal design specifications. Circuit designers must evaluate thermal management requirements and ensure that the substitute device's power rating aligns with application-specific dissipation demands. The 2N6491G's higher saturation voltage (3.5 V at 5 A, 15 A versus 3 V at 2.5 A, 10 A) requires verification in circuits sensitive to saturation voltage performance.

Frequently Asked Questions (FAQ)

Q: Can the 2N6491G directly replace the BD910 in all applications?

A: The 2N6491G meets the mandatory electrical parameters (15 A collector current, 80 V breakdown voltage, PNP configuration, TO-220-3 package) required for functional equivalence. However, circuit designers must account for differences in maximum power dissipation and saturation voltage characteristics. Applications operating near the BD910's 90 W power limit require thermal analysis to confirm the 2N6491G's 1.8 W rating is adequate.

Q: What is the significance of the power rating difference between these devices?

A: The BD910 is rated for 90 W maximum power dissipation, while the 2N6491G is rated for 1.8 W. This difference indicates different thermal design specifications and heat dissipation capabilities. The 2N6491G is suitable for applications where power dissipation remains below 1.8 W. Applications requiring higher power handling must implement additional thermal management or select alternative devices.

Q: Are there packaging differences between the BD910 and 2N6491G?

A: Both devices use the TO-220-3 package for through-hole mounting. Physical dimensions and pin configurations are identical, enabling direct mechanical substitution on printed circuit boards without layout modifications.

Q: How do the saturation voltage specifications differ?

A: The BD910 specifies 3 V saturation voltage at 2.5 A base current and 10 A collector current. The 2N6491G specifies 3.5 V saturation voltage at 5 A base current and 15 A collector current. Circuits sensitive to saturation voltage performance must evaluate whether the 0.5 V difference impacts circuit operation.

Q: What compliance certifications apply to both devices?

A: Both the BD910 and 2N6491G are ROHS3 compliant and REACH unaffected. These certifications confirm compliance with current environmental and hazardous substance regulations applicable to electronic component manufacturing and distribution.

Q: Why is the BD910 classified as obsolete?

A: The BD910 is no longer in active production by STMicroelectronics. The obsolete status necessitates identification of functionally equivalent alternatives for design continuity and production support. The 2N6491G, with active product status from onsemi, provides ongoing availability and supply chain reliability.

Q: Does the 2N6491G support the same frequency range as the BD910?

A: The 2N6491G has a higher transition frequency (5 MHz) compared to the BD910 (3 MHz). This higher frequency capability supports improved switching performance in applications requiring faster signal processing. Applications designed for the BD910's 3 MHz specification operate within the 2N6491G's frequency envelope without performance degradation.