BD901-S Equivalent & Substitute Parts Reference

Part Overview

The BD901-S, manufactured by Bourns Inc., is an NPN Darlington Bipolar Junction Transistor (BJT) rated for 100 V collector-emitter breakdown voltage, 8 A maximum collector current, and 2 W power dissipation in a TO-220-3 through-hole package. This device is classified as obsolete. Due to manufacturer obsolescence and inventory status, identifying substitute or equivalent transistors with comparable electrical, thermal, and mechanical characteristics is essential for maintaining existing designs and supporting effective lifecycle management.

Substiute Parts

BD901-S
Bourns Inc.In Stock: 1183BD901-S Datasheet
BD901-S
Current Part
BDX53C
onsemiIn Stock: 21480BDX53C Datasheet
BDX53C
Direct
BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
Direct
TIP132
STMicroelectronicsIn Stock: 15400TIP132 Datasheet
TIP132
Direct
2N6045G
onsemiIn Stock: 11812N6045G Datasheet
2N6045G
Similar
BDX33C
Fairchild SemiconductorIn Stock: 21693BDX33C Datasheet
BDX33C
Similar
BDX33CG
onsemiIn Stock: 2052BDX33CG Datasheet
BDX33CG
Similar
TIP102
STMicroelectronicsIn Stock: 23155TIP102 Datasheet
TIP102
Similar
TIP102G
onsemiIn Stock: 1412TIP102G Datasheet
TIP102G
Similar
TIP122G
onsemiIn Stock: 35189TIP122G Datasheet
TIP122G
Similar

Key Parameters

Parameter BD901-S
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 8 A
Vce Saturation (Max) @ Ib, Ic 2.5V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Power - Max 2 W
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BD901-S are grouped based on direct matching of electrical and mechanical parameters, including:

  • Transistor Type (NPN - Darlington)
  • Collector-Emitter Breakdown Voltage (100 V)
  • Maximum Collector Current (8 A or higher)
  • DC Current Gain (minimum 750 or 1000 as specified)
  • Vce Saturation at referenced Ib, Ic values
  • Power Dissipation
  • Operating Temperature Range
  • Mounting Type and Package (TO-220-3 or equivalent)
  • RoHS and Regulatory Status

Only parts that align with these declared specifications are shown as direct equivalents or alternatives.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Operating Temperature Mounting Type Package / Case RoHS Status Product Status
BD901-S Bourns Inc. NPN - Darlington 100 V 8 A 2.5V @ 12mA, 3A 500µA 750 @ 3A, 3V 2 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Obsolete
BDX53C onsemi NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 60 W 150°C (TJ) Through Hole TO-220-3 - Obsolete
BDX53CG onsemi NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 65 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP132 STMicroelectronics NPN - Darlington 100 V 8 A 4V @ 30mA, 6A 500µA 1000 @ 4A, 4V 2 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
2N6045G onsemi NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 20µA 1000 @ 3A, 4V 75 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX33C Fairchild Semiconductor NPN - Darlington 100 V 10 A 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX33CG onsemi NPN - Darlington 100 V 10 A 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP102 STMicroelectronics NPN - Darlington 100 V 8 A 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP102G onsemi NPN - Darlington 100 V 8 A 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP122G onsemi NPN - Darlington 100 V 5 A 4V @ 20mA, 5A 500µA 1000 @ 3A, 3V 2 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active

Engineering Selection Recommendations

Selection of BD901-S substitutes should be based on matching product status and compliance parameters. Active substitute parts such as BDX53CG, TIP132, 2N6045G, BDX33C, BDX33CG, TIP102, TIP102G, and TIP122G are ROHS3 compliant and support through-hole mounting in TO-220-3 or directly compatible packages. Parts with obsolete status (e.g., BDX53C) may be considered only where supply chain constraints are managed, and active alternatives are prioritized.

Frequently Asked Questions (FAQ)

Q1: What requirements must a substitute for BD901-S meet?
A1: Substitute devices must match the NPN Darlington structure, a maximum collector-emitter voltage of 100 V, collector current rating of at least 8 A, comparable current gain, power dissipation, and TO-220-3 package with through-hole mounting.

Q2: Can a device with higher current or power rating be used as a substitute?
A2: Devices with equal or higher current and power ratings that match other key parameters (including voltage, gain, and package) are included as valid substitutes.

Q3: Is package compatibility required for substitution?
A3: The substitute must be in a TO-220-3 or equivalent through-hole package to ensure full mechanical compatibility with the PCB and heatsink assemblies designed for BD901-S.

Q4: Are all listed substitutes RoHS3 compliant?
A4: All listed substitutes explicitly marked as “ROHS3 Compliant” in the data meet this compliance status.

Q5: Why are “Active” status parts preferred as substitutes?
A5: Parts with “Active” product status are preferred to ensure ongoing availability and supply chain continuity, reducing the risk associated with obsolete sources.

Q6: Are there differences in “Vce Saturation” and “DC Gain” values among substitutes?
A6: Detailed comparison in the parameter table highlights the minimum Vce(sat) and gain as provided in each substituting part's documentation. Only direct matches to declared parameters are included.

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