BD899A-S Equivalent & Substitute Parts Reference

Part Overview

The BD899A-S is an NPN Darlington Bipolar Junction Transistor (BJT) manufactured by Bourns Inc., designed for power switching and amplification applications. It features a maximum collector current of 8 A, a collector-emitter voltage rating of 80 V, and is offered in a standard TO-220-3 through-hole package. The product status for BD899A-S is "Obsolete." Due to its obsolescence, sourcing replacement or alternative models with compatible electrical and mechanical parameters is required for ongoing designs, repairs, or inventory management.

Key Parameters

Parameter	BD899A-S Value
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	2.8V @ 16mA, 4A
Current - Collector Cutoff (Max)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 4A, 3V
Power - Max	2 W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution is determined strictly by matching the following key parameters for the Transistors, Bipolar (BJT) product category: Transistor Type (NPN - Darlington), Maximum Collector Current (8 A), Collector-Emitter Breakdown Voltage (80 V), Collector Cutoff Current (500µA), DC Current Gain (minimum 750), Power Rating, Package/Case (TO-220-3), Mounting Type (Through Hole), and RoHS status. Substitutes must align with these specified electrical and mechanical characteristics.

Parameter Comparison

Parameter	BD899A-S Bourns Inc.	BDX53B STMicroelectronics	BDX53BG onsemi
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	2.8V @ 16mA, 4A	2V @ 12mA, 3A	2V @ 12mA, 3A
Current - Collector Cutoff (Max)	500µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 4A, 3V	750 @ 3A, 3V	750 @ 3A, 3V
Power - Max	2 W	60 W	65 W
Operating Temperature	-65°C ~ 150°C (TJ)	150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Selection should prioritize active product status and verified RoHS3 compliance to support ongoing supply and regulatory conformance. Both BDX53B (STMicroelectronics) and BDX53BG (onsemi) are active, RoHS3 compliant alternatives with compatible electrical and mechanical parameters by the provided information.

Frequently Asked Questions (FAQ)

Q1: What makes BDX53B and BDX53BG suitable substitutes for BD899A-S?
A1: Both BDX53B and BDX53BG match the main electrical specifications: NPN Darlington configuration, 8 A collector current, 80 V collector-emitter breakdown voltage, 500µA maximum collector cutoff current, minimum DC current gain of 750, and TO-220-3 through-hole package.

Q2: Are there differences in packaging between BD899A-S and its substitutes?
A2: All parts, including BD899A-S, BDX53B, and BDX53BG, use the TO-220-3 package with through-hole mounting type, ensuring mechanical compatibility.

Q3: Do the substitute parts meet RoHS requirements?
A3: BD899A-S, BDX53B, and BDX53BG are all RoHS3 compliant by the information provided.

Q4: Is there any consideration regarding product status for long-term availability?
A4: BD899A-S is obsolete. Both BDX53B and BDX53BG are currently active, supporting continued supply.

Q5: Are there differences in power rating or thermal performance to be considered?
A5: The substitute parts have a higher maximum power rating compared to BD899A-S based on the provided data.

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