BD897-S Equivalent & Substitute Parts Reference

Part Overview

The BD897-S is a bipolar NPN Darlington transistor rated for 60 V and 8 A in a TO-220 through hole package, previously supplied by Bourns Inc. With a maximum power dissipation of 2 W and minimum DC current gain of 750 @ 3A, 3V, it is suitable for high-current switching applications. The product status is Obsolete, requiring engineers to identify alternative models with strictly matching electrical and mechanical specifications for continued system maintainability or replacement.

Key Parameters

Parameter	BD897-S
Manufacturer	Bourns Inc.
Category	Transistors, Bipolar (BJT)
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60 V
Current - Collector (Ic) (Max)	8 A
Vce Saturation (Max) @ Ib, Ic	2.5V @ 12mA, 3A
Current - Collector Cutoff (Max)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Power - Max	2 W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution for the BD897-S NPN Darlington transistor is based strictly on the following parameters:

Transistor Type (NPN Darlington)
Maximum Collector-Emitter Voltage (60 V)
Maximum Collector Current (8 A)
Package / Case (TO-220-3, Through Hole)
Minimum DC Current Gain
Maximum Collector Cutoff Current
Maximum Saturation Voltage at given input and collector currents
Compliance status (RoHS)
Operating Temperature Range

Only parts matching or exceeding these criteria are included as substitutes.

Parameter Comparison

Parameter	BD897-S	2N6043G
Manufacturer	Bourns Inc.	onsemi
Category	Transistors, Bipolar (BJT)	Transistors, Bipolar (BJT)
Transistor Type	NPN - Darlington	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V
Current - Collector (Ic) (Max)	8 A	8 A
Vce Saturation (Max) @ Ib, Ic	2.5V @ 12mA, 3A	2V @ 16mA, 4A
Current - Collector Cutoff (Max)	500µA	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V	1000 @ 4A, 4V
Power - Max	2 W	75 W
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220
RoHS Status	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

The BD897-S is classified as Obsolete, while the substitute 2N6043G from onsemi is Active and carries the same RoHS3 compliance. Both devices satisfy electrical, mechanical, and compliance requirements, making the 2N6043G a suitable replacement within the category of NPN Darlington Bipolar (BJT) Transistors in TO-220 packaging. No additional criteria are indicated by the provided certifications.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting BD897-S NPN Darlington transistors?
A1: Substitute selection is based on Transistor Type (NPN Darlington), Maximum Collector-Emitter Voltage (60 V), Maximum Collector Current (8 A), minimum DC current gain, package (TO-220 through hole), and compliance status.

Q2: Are alternate package styles permissible for substitution?
A2: Only TO-220-3 through hole packages match the specified mechanical requirements for BD897-S.

Q3: How does compliance impact substitute selection?
A3: Both BD897-S and substitutes are ROHS3 Compliant, ensuring continued environmental and regulatory compatibility.

Q4: Is the 2N6043G a direct substitute in terms of performance and compatibility?
A4: The 2N6043G matches all specified electrical, mechanical, and compliance parameters for the BD897-S transistor, as detailed above.

Q5: What should be considered regarding operating conditions?
A5: Both BD897-S and substitutes operate within identical -65°C to 150°C (TJ) temperature ranges as specified.

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