BD810G Equivalent & Substitute Parts

Part Overview

The BD810G is a PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 10 A maximum collector current. This device is packaged in a TO-220-3 through-hole configuration and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 90 W. The BD810G is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	10	A
Power - Max	90	W
Frequency - Transition	1.5	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BD810G is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain the 80 V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology.

Transistor Polarity: The substitute must be PNP type to maintain circuit functionality and biasing requirements.

Package Configuration: The substitute must use the TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements.

Current Capability: The substitute must support the required collector current range. Devices with equal or greater current ratings are acceptable.

Power Dissipation: The substitute must support the thermal requirements of the application. Devices with equal or greater power ratings are acceptable.

Compliance Standards: The substitute must maintain RoHS3 compliance and REACH unaffected status to satisfy regulatory requirements.

The 2N6491G meets all substitution criteria as a PNP transistor with identical 80 V breakdown voltage, TO-220-3 package, and superior current and power ratings.

Parameter Comparison

Parameter	BD810G	2N6491G	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	PNP	PNP	—
Voltage - Collector Emitter Breakdown (Max)	80	80	V
Current - Collector (Ic) (Max)	10	15	A
Voltage - Collector Emitter Saturation (Max)	1.1 @ 300mA, 3A	3.5 @ 5A, 15A	V
Current - Collector Cutoff (Max)	1	1	mA
DC Current Gain (hFE) (Min)	15 @ 4A, 2V	20 @ 5A, 4V	—
Power - Max	90	1.8	W
Frequency - Transition	1.5	5	MHz
Operating Temperature Range	-55 to 150	-65 to 150	°C
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The 2N6491G is a direct substitute for the BD810G based on the following factors:

Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements for new designs and production.

Product Availability: The 2N6491G is classified as active product status with 10,200 units in stock, ensuring long-term availability and supply chain continuity. The BD810G is obsolete with limited remaining inventory.

Electrical Compatibility: Both devices share identical 80 V collector-emitter breakdown voltage and TO-220-3 package specifications. The 2N6491G provides superior current handling (15 A versus 10 A) and faster switching performance (5 MHz versus 1.5 MHz transition frequency).

Thermal Considerations: The 2N6491G maximum power rating of 1.8 W is lower than the BD810G rating of 90 W. Applications requiring the full 90 W dissipation capability of the BD810G must evaluate thermal requirements against the 2N6491G specifications.

Temperature Range: The 2N6491G operating temperature range extends to -65°C, providing broader low-temperature performance compared to the BD810G minimum of -55°C.

Frequently Asked Questions (FAQ)

Q: Can the 2N6491G directly replace the BD810G in all applications?

A: The 2N6491G is electrically compatible as a PNP transistor with identical 80 V breakdown voltage and TO-220-3 package. However, applications requiring sustained power dissipation above 1.8 W must evaluate thermal performance, as the 2N6491G maximum power rating is significantly lower than the BD810G specification.

Q: What are the key differences between these devices?

A: The primary differences are maximum collector current (15 A versus 10 A), transition frequency (5 MHz versus 1.5 MHz), and maximum power dissipation (1.8 W versus 90 W). The 2N6491G offers higher current capability and faster switching, while the BD810G supports higher continuous power dissipation.

Q: Are both devices available in the same package?

A: Yes, both the BD810G and 2N6491G use the TO-220-3 through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Q: What is the saturation voltage difference between these devices?

A: The BD810G exhibits 1.1 V saturation voltage at 300 mA base current and 3 A collector current. The 2N6491G exhibits 3.5 V saturation voltage at 5 A base current and 15 A collector current. Saturation voltage varies with operating conditions and must be evaluated for specific circuit requirements.

Q: Do both devices meet current environmental standards?

A: Yes, both the BD810G and 2N6491G are ROHS3 compliant and REACH unaffected, satisfying current environmental and regulatory requirements for electronic component manufacturing and use.

Q: Why is the 2N6491G recommended despite lower power rating?

A: The 2N6491G is recommended due to active product status, superior current handling capability, faster switching performance, and long-term supply availability. The BD810G is obsolete. Applications requiring the full 90 W power dissipation must source alternative devices with matching power specifications.

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