BD744-S Equivalent & Substitute Parts Reference Guide

Part Overview

The BD744-S is a PNP Bipolar Junction Transistor (BJT) manufactured by Bourns Inc., categorized under Transistors, Bipolar (BJT). It features a maximum collector-emitter breakdown voltage of 45 V, a collector current of 15 A, and a maximum power dissipation of 2 W in a TO-220 through-hole package. The product status is Obsolete. Due to its discontinuation, sourcing equivalent or substitute parts is required to ensure continued system functionality or support legacy designs.

Key Parameters

Manufacturer Part Number	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Mounting Type	Package / Case	Operating Temperature	RoHS Status
BD744-S	PNP	15 A	45 V	3V @ 5A, 15A	100µA	20 @ 5A, 4V	2 W	Through Hole	TO-220-3	-65°C ~ 150°C (TJ)	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute selection is performed strictly by matching essential electrical and mechanical parameters within the Transistors, Bipolar (BJT) category. Key parameters enabling direct substitution are: transistor type (PNP), maximum collector current, collector-emitter breakdown voltage, package/case, mounting type, DC current gain, maximum power dissipation, and RoHS compliance. Only substitutes meeting or exceeding these specified characteristics are included.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Mounting Type	Package / Case	Operating Temperature	RoHS Status	Product Status
BD744-S	Bourns Inc.	PNP	15 A	45 V	3V @ 5A, 15A	100µA	20 @ 5A, 4V	2 W	Through Hole	TO-220-3	-65°C ~ 150°C (TJ)	ROHS3 Compliant	Obsolete
2N6490G	onsemi	PNP	15 A	60 V	3.5V @ 5A, 15A	1mA	20 @ 5A, 4V	1.8 W	Through Hole	TO-220-3	-65°C ~ 150°C (TJ)	ROHS3 Compliant	Obsolete
TIP32G	onsemi	PNP	3 A	40 V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	2 W	Through Hole	TO-220-3	-65°C ~ 150°C (TJ)	ROHS3 Compliant	Active

Engineering Selection Recommendations

Selection between BD744-S and substitute bipolar transistors (2N6490G, TIP32G) should be based on the matching product status, mechanical format, and compliance attributes. ROHS3 Compliant status is consistent across all listed options. Active product status is present only for TIP32G, while both BD744-S and 2N6490G are marked Obsolete. All parts share a TO-220 through-hole mounting style compatible with original designs.

Frequently Asked Questions (FAQ)

Q1: What parameters must match for substitution within Transistors, Bipolar (BJT)?
A1: Essential substitution parameters are transistor type (PNP), collector current, collector-emitter breakdown voltage, DC current gain, power rating, package/case (TO-220-3), mounting type, and relevant RoHS compliance.

Q2: Are differences in maximum collector current and voltage significant for substitution?
A2: Substitution requires that the substitute device's key electrical limits meet or exceed application requirements. Exact matching is necessary for critical performance parameters.

Q3: Can package differences affect compatibility?
A3: The TO-220-3 package and through-hole mounting must be matched to preserve mechanical and thermal compatibility.

Q4: Is product status relevant in the selection of substitute bipolar transistors?
A4: Substitute selection should consider product status to ensure availability for ongoing production or maintenance. Active status is preferred for future sourcing.

Q5: Is RoHS compliance required for substitution?
A5: RoHS3 Compliant status enables use in regions with environmental compliance regulations and uniformity in material content across selected substitutes.

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