BD682S Equivalent & Substitute Parts

Part Overview

The BD682S is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is designed for through-hole mounting in TO-126-3 package configuration and is classified as obsolete. Due to its obsolete product status, identifying equivalent substitute parts with matching electrical and mechanical specifications is necessary for design continuity and procurement planning.

Substiute Parts

BD682S
onsemiIn Stock: 1143BD682S Datasheet
BD682S
Current Part
BD682G
onsemiIn Stock: 33963BD682G Datasheet
BD682G
Direct
BD682
onsemiIn Stock: 3338BD682 Datasheet
BD682
Direct

Key Parameters

Parameter Value
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
Power - Max 14 W
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Operating Temperature 150°C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BD682S are determined by equivalence in the following critical parameters:

  • Transistor Type: PNP - Darlington configuration
  • Current Rating: 4 A maximum collector current
  • Voltage Rating: 100 V collector-emitter breakdown voltage
  • Saturation Characteristics: 2.5V @ 30mA, 1.5A
  • Current Gain: 750 minimum @ 1.5A, 3V
  • Mounting Configuration: Through-hole technology
  • Package Compatibility: TO-126-3 or equivalent TO-225AA footprint

The BD682S has two identified substitute parts: BD682G and BD682. Both maintain identical electrical specifications for collector current, voltage rating, saturation voltage, cutoff current, and DC current gain. All three parts share the same base product number (BD682) and are manufactured by onsemi.

Parameter Comparison

Parameter BD682S BD682G BD682
Manufacturer onsemi onsemi onsemi
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 14 W 40 W 40 W
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Product Status Obsolete Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant RoHS non-compliant

Engineering Selection Recommendations

BD682G is the primary substitute for BD682S applications. This part maintains full electrical equivalence across all critical parameters while offering the following advantages:

  • Active product status ensures ongoing availability and manufacturer support
  • ROHS3 compliance aligns with current environmental regulations
  • Extended operating temperature range (-55°C to 150°C) provides broader thermal operating margin compared to BD682S (150°C maximum)
  • Higher maximum power rating (40 W versus 14 W) accommodates applications with increased thermal dissipation requirements
  • Bulk packaging availability supports production-scale procurement

BD682 is an alternative substitute that maintains electrical equivalence but carries the following considerations:

  • Obsolete product status limits long-term availability
  • RoHS non-compliance may conflict with regulatory requirements in certain applications or regions
  • Higher maximum power rating (40 W) matches BD682G capability

For new designs and ongoing production, BD682G is the recommended substitute due to active product status and full compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can BD682G directly replace BD682S in existing circuit designs?

A: Yes. BD682G maintains identical electrical specifications for collector current (4 A), collector-emitter breakdown voltage (100 V), saturation voltage (2.5V @ 30mA, 1.5A), cutoff current (500µA), and DC current gain (750 @ 1.5A, 3V). Both devices use through-hole mounting with compatible TO-126-3 package footprints.

Q: What is the difference between BD682S and BD682G?

A: The primary differences are product status, power rating, and operating temperature range. BD682G is an active product with a 40 W maximum power rating and -55°C to 150°C operating temperature range, while BD682S is obsolete with a 14 W maximum power rating and 150°C maximum operating temperature. All electrical performance parameters are identical.

Q: Are there package compatibility concerns when substituting BD682G for BD682S?

A: No. Both parts use the same TO-126-3 package configuration with TO-225AA footprint compatibility. Through-hole mounting characteristics are identical, allowing direct board-level substitution without layout modifications.

Q: Why is BD682 listed as a substitute if it is also obsolete?

A: BD682 maintains full electrical equivalence to BD682S and is included in the substitute list for reference purposes. However, due to obsolete status and RoHS non-compliance, BD682 is not recommended for new applications. BD682G is the preferred active substitute.

Q: Does the higher power rating of BD682G affect circuit operation?

A: No. The 40 W maximum power rating of BD682G represents a higher thermal capability than the 14 W rating of BD682S. This difference does not alter electrical performance in applications designed for BD682S. The higher power rating provides additional thermal margin in power-dissipative applications.

Q: What compliance certifications apply to BD682G?

A: BD682G is ROHS3 compliant and REACH unaffected. These certifications align with current environmental and regulatory standards for electronic components in most markets.

Request Quote (Ships tomorrow)