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BD678AS PNP Darlington Transistor Equivalent & Substitute Parts
Part Overview
The BD678AS is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 4 A maximum collector current. This component is classified as obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The BD678AS is packaged in TO-126-3 (TO-225AA) through-hole configuration and is suitable for applications requiring moderate power dissipation up to 14 W.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP - Darlington | — |
| Maximum Collector Current (Ic) | 4 | A |
| Collector-Emitter Breakdown Voltage (Max) | 60 | V |
| Maximum Power Dissipation | 14 | W |
| DC Current Gain (hFE Min) | 750 | — |
| Operating Temperature (Junction) | 150 | °C |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the BD678AS is determined by electrical parameter equivalence across the following critical specifications:
- Transistor Configuration: PNP Darlington topology
- Voltage Rating: 60 V collector-emitter breakdown voltage
- Current Rating: 4 A maximum collector current
- DC Current Gain: Minimum 750 hFE
- Operating Temperature: 150°C junction temperature capability
- Compliance: ROHS3 compliance and REACH unaffected status
- Mounting: Through-hole technology
The BD678 manufactured by STMicroelectronics meets all electrical parameter requirements for direct substitution. While packaging differs between the onsemi TO-126-3 and STMicroelectronics SOT-32-3 variants, both are through-hole configurations compatible with standard PCB layouts. The STMicroelectronics variant offers enhanced power dissipation capability (40 W versus 14 W), providing additional thermal margin in applications.
Parameter Comparison
| Parameter | BD678AS (onsemi) | BD678 (STMicroelectronics) | Unit |
|---|---|---|---|
| Transistor Type | PNP - Darlington | PNP - Darlington | — |
| Maximum Collector Current (Ic) | 4 | 4 | A |
| Collector-Emitter Breakdown Voltage (Max) | 60 | 60 | V |
| Vce Saturation (Max) | 2.8 @ 40mA, 2A | 2.5 @ 30mA, 1.5A | V |
| Collector Cutoff Current (Max) | 500 | 500 | µA |
| DC Current Gain (hFE Min) | 750 @ 2A, 3V | 750 @ 1.5A, 3V | — |
| Maximum Power Dissipation | 14 | 40 | W |
| Operating Temperature (Junction) | 150 | 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The BD678 manufactured by STMicroelectronics is the direct electrical equivalent to the obsolete BD678AS. Selection of the STMicroelectronics variant is supported by the following factors:
Product Status: The STMicroelectronics BD678 maintains active product status, ensuring long-term availability and supply chain continuity compared to the obsolete onsemi BD678AS.
Compliance Certifications: Both components maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and procurement.
Electrical Equivalence: Matching collector current (4 A), breakdown voltage (60 V), DC current gain (750 hFE minimum), and junction temperature rating (150°C) confirm functional interchangeability in circuit applications.
Thermal Performance: The STMicroelectronics variant provides 40 W maximum power dissipation compared to 14 W for the onsemi version, offering improved thermal headroom without circuit modification.
Through-Hole Compatibility: Both components utilize through-hole mounting technology, compatible with existing PCB designs and assembly processes.
Frequently Asked Questions (FAQ)
Q: Can the BD678 (STMicroelectronics) directly replace the BD678AS (onsemi) in existing designs?
A: Yes. Both components share identical electrical specifications for collector current (4 A), breakdown voltage (60 V), DC current gain (750 hFE), and operating temperature (150°C). Through-hole mounting compatibility permits direct PCB substitution.
Q: What is the difference between TO-126-3 and SOT-32-3 packaging?
A: Both are through-hole package variants of the TO-225AA family. TO-126-3 and SOT-32-3 differ in physical dimensions and lead configuration but maintain electrical equivalence. PCB layout verification is required to confirm mechanical fit.
Q: Why does the STMicroelectronics BD678 have higher power dissipation (40 W vs. 14 W)?
A: Power dissipation rating reflects the thermal design of the specific package variant. The higher rating provides additional thermal margin but does not alter electrical performance or circuit behavior.
Q: Are there any compliance differences between the two parts?
A: No. Both BD678AS and BD678 maintain ROHS3 compliance and REACH unaffected status, satisfying identical regulatory requirements.
Q: What is the significance of the obsolete product status for BD678AS?
A: Obsolete status indicates the onsemi BD678AS is no longer manufactured or supported. The active STMicroelectronics BD678 provides equivalent functionality with assured long-term availability.
Q: How do saturation voltage specifications differ between the two parts?
A: The BD678AS specifies 2.8 V saturation at 40 mA base current and 2 A collector current, while the STMicroelectronics BD678 specifies 2.5 V at 30 mA base current and 1.5 A collector current. Both values remain within acceptable operating ranges for typical Darlington applications.
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