BD652-S Equivalent & Substitute Parts Reference

Part Overview

The BD652-S, manufactured by Bourns Inc., is a PNP Darlington Bipolar Junction Transistor with a maximum collector-emitter voltage of 120 V, collector current up to 8 A, and a power dissipation of 2 W, housed in a TO-220-3 through-hole package. This product is currently classified as obsolete, which makes it necessary to identify suitable substitute models for new designs, repairs, or supply continuity. Alternative models are essential to maintain availability and ensure continued compliance with design requirements in existing circuits.

Substiute Parts

BD652-S
Bourns Inc.In Stock: 873BD652-S Datasheet
BD652-S
Current Part
TIP107G
onsemiIn Stock: 9148TIP107G Datasheet
TIP107G
Similar

Key Parameters

Parameter Value (BD652-S)
Transistor Type PNP - Darlington
Voltage - Collector Emitter Breakdown (Max) 120 V
Current - Collector (Ic) (Max) 8 A
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Power - Max 2 W
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute part selection for the BD652-S is based strictly on the combination of the following parameters: transistor type (PNP – Darlington), collector-emitter breakdown voltage, collector current, Vce saturation, current gain, power dissipation, operating temperature range, mounting type, package compatibility, and RoHS compliance. Only parts explicitly meeting the required electrical and mechanical limits, including current, voltage, power, package type (TO-220), and mounting (through hole), are identified as potential substitutes.

Parameter Comparison

Parameter BD652-S TIP107G
Manufacturer Bourns Inc. onsemi
Transistor Type PNP - Darlington PNP - Darlington
Voltage - Collector Emitter Breakdown (Max) 120 V 100 V
Current - Collector (Ic) (Max) 8 A 8 A
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 500µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 1000 @ 3A, 4V
Power - Max 2 W 2 W
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Selection between BD652-S and its substitute TIP107G can be made by reference to product status—specifically, whether an active or obsolete component is required. Both BD652-S and TIP107G are ROHS3 compliant. TIP107G is an active status device.

Frequently Asked Questions (FAQ)

Q1: What are the main electrical criteria for substituting a PNP Darlington BJT transistor such as BD652-S?
A1: The main criteria are transistor type, voltage rating, current rating, power dissipation, current gain, and Vce saturation. The substitute must have equal or better parameters in these fields.

Q2: Is package compatibility important when selecting a substitute for BD652-S?
A2: Yes. Both BD652-S and TIP107G use the TO-220-3 through-hole package, ensuring compatibility for footprint and mechanical assembly.

Q3: How does RoHS compliance affect substitute selection?
A3: Only ROHS3 compliant substitutes are listed, as this status is required when selecting for restricted substances compliance.

Q4: Can TIP107G be directly used in place of BD652-S?
A4: TIP107G matches in key electrical ratings, mechanical mounting, package, and RoHS status.

Q5: Does the substitution affect regulatory or export classifications?
A5: Both BD652-S and TIP107G have the same ECCN and HTSUS codes according to the provided data.

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