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BD652-S Equivalent & Substitute Parts Reference
Part Overview
The BD652-S, manufactured by Bourns Inc., is a PNP Darlington Bipolar Junction Transistor with a maximum collector-emitter voltage of 120 V, collector current up to 8 A, and a power dissipation of 2 W, housed in a TO-220-3 through-hole package. This product is currently classified as obsolete, which makes it necessary to identify suitable substitute models for new designs, repairs, or supply continuity. Alternative models are essential to maintain availability and ensure continued compliance with design requirements in existing circuits.
Substiute Parts
Key Parameters
| Parameter | Value (BD652-S) |
|---|---|
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Current - Collector (Ic) (Max) | 8 A |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 50mA, 5A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
| Power - Max | 2 W |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute part selection for the BD652-S is based strictly on the combination of the following parameters: transistor type (PNP – Darlington), collector-emitter breakdown voltage, collector current, Vce saturation, current gain, power dissipation, operating temperature range, mounting type, package compatibility, and RoHS compliance. Only parts explicitly meeting the required electrical and mechanical limits, including current, voltage, power, package type (TO-220), and mounting (through hole), are identified as potential substitutes.
Parameter Comparison
| Parameter | BD652-S | TIP107G |
|---|---|---|
| Manufacturer | Bourns Inc. | onsemi |
| Transistor Type | PNP - Darlington | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 120 V | 100 V |
| Current - Collector (Ic) (Max) | 8 A | 8 A |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 50mA, 5A | 2.5V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V | 1000 @ 3A, 4V |
| Power - Max | 2 W | 2 W |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220 | TO-220 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Selection between BD652-S and its substitute TIP107G can be made by reference to product status—specifically, whether an active or obsolete component is required. Both BD652-S and TIP107G are ROHS3 compliant. TIP107G is an active status device.
Frequently Asked Questions (FAQ)
Q1: What are the main electrical criteria for substituting a PNP Darlington BJT transistor such as BD652-S?
A1: The main criteria are transistor type, voltage rating, current rating, power dissipation, current gain, and Vce saturation. The substitute must have equal or better parameters in these fields.
Q2: Is package compatibility important when selecting a substitute for BD652-S?
A2: Yes. Both BD652-S and TIP107G use the TO-220-3 through-hole package, ensuring compatibility for footprint and mechanical assembly.
Q3: How does RoHS compliance affect substitute selection?
A3: Only ROHS3 compliant substitutes are listed, as this status is required when selecting for restricted substances compliance.
Q4: Can TIP107G be directly used in place of BD652-S?
A4: TIP107G matches in key electrical ratings, mechanical mounting, package, and RoHS status.
Q5: Does the substitution affect regulatory or export classifications?
A5: Both BD652-S and TIP107G have the same ECCN and HTSUS codes according to the provided data.
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