BD649-S Equivalent & Substitute Parts Reference

Part Overview

The BD649-S is an NPN Darlington bipolar junction transistor (BJT) in a TO-220 through-hole package. Its core attributes are a maximum collector-emitter voltage of 100 V, a maximum collector current of 8 A, and a minimum DC current gain of 750 at 3A, 3V. The product is classified as obsolete, necessitating the identification of compatible substitute transistors for ongoing designs and maintenance requirements in the same category.

Substiute Parts

BD649-S
Bourns Inc.In Stock: 1141BD649-S Datasheet
BD649-S
Current Part
BDX53C
onsemiIn Stock: 21480BDX53C Datasheet
BDX53C
Direct
2N6045G
onsemiIn Stock: 11812N6045G Datasheet
2N6045G
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BDX33C
Fairchild SemiconductorIn Stock: 21693BDX33C Datasheet
BDX33C
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BDX33CG
onsemiIn Stock: 2052BDX33CG Datasheet
BDX33CG
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BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
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TIP102
STMicroelectronicsIn Stock: 23155TIP102 Datasheet
TIP102
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TIP102G
onsemiIn Stock: 1412TIP102G Datasheet
TIP102G
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TIP132
STMicroelectronicsIn Stock: 15400TIP132 Datasheet
TIP132
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Key Parameters

Parameter Value
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 8 A
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Power - Max 2 W
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for BD649-S are selected strictly on the following parameters:

  • Transistor Type: NPN - Darlington
  • Collector-Emitter Voltage (Vce max): 100 V
  • Collector Current (Ic max): ≥ 8 A
  • DC Current Gain (hFE min): ≥ 750 at appropriate test conditions
  • Package/Case: TO-220-3 or direct TO-220 equivalents
  • Mounting Type: Through Hole
  • RoHS or equivalent environmental status as applicable

All listed substitutes match on these allowed electrical and mechanical parameters, ensuring direct interchangeability within the defined performance envelope.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce (Max) [V] Ic (Max) [A] Vce Sat (Max) Ic Cutoff (Max) hFE (Min) Power (Max) [W] Operating Temp Mounting Type Package / Case RoHS Status Product Status
BD649-S Bourns Inc. NPN - Darlington 100 8 2.5V @ 50mA, 5A 500µA 750 @ 3A, 3V 2 -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Obsolete
BDX53C onsemi NPN - Darlington 100 8 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 60 150°C (TJ) Through Hole TO-220-3 - Obsolete
2N6045G onsemi NPN - Darlington 100 8 2V @ 12mA, 3A 20µA 1000 @ 3A, 4V 75 -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX33C Fairchild Semiconductor NPN - Darlington 100 10 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX33CG onsemi NPN - Darlington 100 10 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX53CG onsemi NPN - Darlington 100 8 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 65 -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP102 STMicroelectronics NPN - Darlington 100 8 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP102G onsemi NPN - Darlington 100 8 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP132 STMicroelectronics NPN - Darlington 100 8 4V @ 30mA, 6A 500µA 1000 @ 4A, 4V 2 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active

Engineering Selection Recommendations

For the BD649-S, which is obsolete, substitute parts must be selected based on comparable or improved compliance and certification status, such as RoHS 3 compliance and matching or wider operating temperature range. Only parts with the same mounting type, package/case, and environmental status should be considered suitable. All listed parts fulfill these requirements as provided in the input data.

Frequently Asked Questions (FAQ)

Q1: What parameters must match to substitute a transistor in the BD649-S category?
A1: The substitute must match on transistor type (NPN Darlington), maximum collector-emitter voltage, maximum collector current, minimum DC current gain, TO-220-3 package, and through-hole mounting.

Q2: Are all substitute parts RoHS compliant?
A2: All listed substitute parts are marked with RoHS 3 compliance or have equivalent environmental status in the provided data.

Q3: Can I use a substitute with higher power ratings or collector current?
A3: Substitutes with equal or higher power and current ratings are compatible provided all other key parameters are matched as per the table.

Q4: Is the package type and mounting important for substitution?
A4: Yes, substitutes must utilize a TO-220-3 (or TO-220 equivalent) package and through-hole mounting to ensure mechanical compatibility.

Q5: Do substitute parts differ in maximum operating temperature?
A5: All listed parts have an operating junction temperature (TJ) range matching the original part or wider, as provided in the individual part specifications.

Q6: Are all listed substitute parts currently active?
A6: Both obsolete and active substitutes are listed; refer to the "Product Status" column in the parameter comparison table for part status.

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