Equivalent & Substitute Parts Reference for BD645-S (Bourns Inc.)

Part Overview

The BD645-S is a Bipolar (BJT) Transistor NPN - Darlington in the Transistors, Bipolar (BJT) category, manufactured by Bourns Inc. It features a maximum collector-emitter breakdown voltage of 60 V, maximum collector current of 8 A, and a through-hole TO-220-3 package. The product is designated as obsolete, necessitating consideration of alternative models for ongoing designs and replacement requirements where identical or compatible electrical and mechanical characteristics are required.

Substiute Parts

BD645-S

Bourns Inc.In Stock: 1232BD645-S Datasheet

Current PartRFQ

2N6043G

onsemiIn Stock: 22272N6043G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for BD645-S are restricted to Transistors, Bipolar (BJT) NPN - Darlington devices that match the following key electrical and mechanical parameters: maximum collector current (Ic), maximum collector-emitter breakdown voltage (Vce), package/case type, mounting type, device family, and compliance status. Only parts with equivalent or better values for these parameters are considered suitable substitutes within this category. Product status is also considered for prioritizing active alternatives.

Parameter Comparison

Engineering Selection Recommendations

Selection is based on product status and compliance with RoHS3 environmental requirements. BD645-S is marked obsolete; selection of an active substitute is required for new designs or for replacement stock. Both BD645-S and 2N6043G are ROHS3 compliant and share equivalent mounting, package, and electrical parameters. 2N6043G is designated as active and matches the required certifications for continued and compliant usage in designs requiring a TO-220 NPN Darlington BJT in this parameter range.

Frequently Asked Questions (FAQ)

Q1: What determines suitable substitution for BD645-S in the Transistors, Bipolar (BJT) category?
Suitable substitution is determined by matching critical parameters: transistor type (NPN - Darlington), maximum collector current (Ic), collector-emitter breakdown voltage (Vce), package and mounting type, environmental compliance, and device status.

Q2: Is package compatibility mandatory for substitution?
Yes, both BD645-S and its substitute 2N6043G utilize the TO-220-3 package for through-hole mounting, ensuring direct mechanical compatibility.

Q3: Are there differences in key electrical characteristics between BD645-S and 2N6043G?
2N6043G matches or exceeds BD645-S in collector current, breakdown voltage, current gain, and cutoff parameters within the provided specifications. Power rating is higher on 2N6043G.

Q4: What certifications or compliance statuses must be considered?
Parts must be ROHS3 compliant and possess relevant inventory availability and product status appropriate for active or obsolete design requirements.

Q5: Why is BD645-S considered for substitution?
BD645-S has been classified as obsolete. Substitution with active components such as 2N6043G ensures continued availability and compliance in applications requiring these functional parameters.