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BD544A-S Equivalent & Substitute Parts Reference
Part Overview
The BD544A-S is a PNP bipolar junction transistor (BJT) manufactured by Bourns Inc. It features a collector-emitter voltage of 60V, a maximum collector current of 8A, and a maximum power dissipation of 2W in a TO-220-3 through-hole package. This part is currently classified as Obsolete. As a result, it is necessary to identify and evaluate substitute or equivalent bipolar (BJT) transistors to ensure continued product support and repair capability within compatible designs.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Current - Collector (Ic) (Max) | 8 A |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 4V |
| Power - Max | 2 W |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution is determined strictly through comparison of essential electrical and mechanical parameters. These key substitution criteria for a bipolar (BJT) transistor in this category are:
- Transistor Type: PNP
- Collector-Emitter Breakdown Voltage (Vce)
- Maximum Collector Current (Ic)
- Power Dissipation (W)
- DC Current Gain (hFE) at specified current and voltage
- Saturation Voltage (Vce(sat)) at a specified base and collector current
- Case/Package (TO-220-3, Through Hole)
Only parts matching or exceeding these specified parameters are considered as eligible substitutes.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Transistor Type | Vce (Max) | Ic (Max) | Vce(sat) (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Operating Temperature | Package / Case | Mounting Type | RoHS Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BD544A-S | Bourns Inc. | PNP | 60 V | 8 A | 1V @ 1.6A, 8A | 700µA | 15 @ 5A, 4V | 2 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Obsolete |
| 2N6109 PBFREE | Central Semiconductor Corp | PNP | 50 V | 7 A | 3.5V @ 3A, 7A | 1mA | 30 @ 2.5A, 4V | 40 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Obsolete |
| 2N6490G | onsemi | PNP | 60 V | 15 A | 3.5V @ 5A, 15A | 1mA | 20 @ 5A, 4V | 1.8 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Obsolete |
| MJE2955T | NTE Electronics, Inc | PNP | 60 V | 10 A | 8V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 75 W | -55°C ~ 150°C (TJ) | TO-220-3 | Through Hole | RoHS non-compliant | Active |
| MJE2955TG | onsemi | PNP | 60 V | 10 A | 8V @ 3.3A, 10A | 700µA | 20 @ 4A, 4V | 75 W | -55°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Active |
| TIP32AG | onsemi | PNP | 60 V | 3 A | 1.2V @ 375mA, 3A | 300µA | 10 @ 3A, 4V | 2 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Active |
| TIP42A | NTE Electronics, Inc | PNP | 60 V | 6 A | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2 W | 150°C (TJ) | TO-220-3 | Through Hole | RoHS non-compliant | Active |
| TIP42A-BP | Micro Commercial Co | PNP | 60 V | 6 A | 1.5V @ 600mA, 6A | 700µA | 30 @ 300mA, 4V | 2 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | Not specified | Active |
| TIP42AG | onsemi | PNP | 60 V | 6 A | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2 W | -65°C ~ 150°C (TJ) | TO-220-3 | Through Hole | ROHS3 Compliant | Active |
Engineering Selection Recommendations
BD544A-S is designated as Obsolete. Substitute parts with an Active status, ROHS3 Compliant classification, and matching mechanical and electrical characteristics provided above can be selected for direct replacement, subject to compliance requirements and inventory availability.
Frequently Asked Questions (FAQ)
Q1: What electrical parameters are critical when selecting an equivalent transistor for BD544A-S?
A1: Critical parameters include transistor type (PNP), collector-emitter breakdown voltage (Vce), maximum collector current (Ic), power dissipation, DC current gain (hFE) at specified current and voltage, and collector-emitter saturation voltage (Vce(sat)) at a given base and collector current.
Q2: Why is the package type and mounting important for substitution?
A2: Mechanical compatibility ensures that the substitute fits the existing PCB footprint and can operate with the same cooling and mounting infrastructure. All substitutes here use the TO-220-3 through-hole package.
Q3: Are the listed substitute transistors direct replacements for the BD544A-S?
A3: Listed substitutes match the BD544A-S in transistor type, package, and the majority of key electrical parameters, based strictly on the input data. Selection should be aligned with these specified characteristics.
Q4: How do RoHS and product status affect selection?
A4: For applications requiring compliance with hazardous substance regulations, only RoHS-compliant and Active substitutes from the list should be used. Product status indicates ongoing manufacturer support.
Q5: Is matching DC current gain (hFE) always required?
A5: Substitution requires hFE to meet or exceed the minimum specified for the main part at the stated test conditions, as per the provided data.
Q6: Can substitutes be used interchangeably in all applications?
A6: Only if all explicitly listed parameters (electrical and mechanical) strictly match those required for the application, as given in the provided tables. No assumptions beyond the provided parameters are to be made.
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