BD544A-S Equivalent & Substitute Parts Reference

Part Overview

The BD544A-S is a PNP bipolar junction transistor (BJT) manufactured by Bourns Inc. It features a collector-emitter voltage of 60V, a maximum collector current of 8A, and a maximum power dissipation of 2W in a TO-220-3 through-hole package. This part is currently classified as Obsolete. As a result, it is necessary to identify and evaluate substitute or equivalent bipolar (BJT) transistors to ensure continued product support and repair capability within compatible designs.

Substiute Parts

BD544A-S
Bourns Inc.In Stock: 820BD544A-S Datasheet
BD544A-S
Current Part
2N6109 PBFREE
Central Semiconductor CorpIn Stock: 19242N6109 PBFREE Datasheet
2N6109 PBFREE
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2N6490G
onsemiIn Stock: 25592N6490G Datasheet
2N6490G
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MJE2955T
NTE Electronics, IncIn Stock: 97231MJE2955T Datasheet
MJE2955T
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MJE2955TG
onsemiIn Stock: 1930MJE2955TG Datasheet
MJE2955TG
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TIP32AG
onsemiIn Stock: 2541TIP32AG Datasheet
TIP32AG
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TIP42A
NTE Electronics, IncIn Stock: 14388TIP42A Datasheet
TIP42A
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TIP42A-BP
Micro Commercial CoIn Stock: 1004TIP42A-BP Datasheet
TIP42A-BP
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TIP42AG
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TIP42AG
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Key Parameters

ParameterValue
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max)8 A
Vce Saturation (Max) @ Ib, Ic1V @ 1.6A, 8A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5A, 4V
Power - Max2 W
Operating Temperature-65°C ~ 150°C (TJ)
Package / CaseTO-220-3
Mounting TypeThrough Hole
RoHS StatusROHS3 Compliant

Substitute Part Grouping Explanation

Substitution is determined strictly through comparison of essential electrical and mechanical parameters. These key substitution criteria for a bipolar (BJT) transistor in this category are:

  • Transistor Type: PNP
  • Collector-Emitter Breakdown Voltage (Vce)
  • Maximum Collector Current (Ic)
  • Power Dissipation (W)
  • DC Current Gain (hFE) at specified current and voltage
  • Saturation Voltage (Vce(sat)) at a specified base and collector current
  • Case/Package (TO-220-3, Through Hole)
    Only parts matching or exceeding these specified parameters are considered as eligible substitutes.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Vce (Max) Ic (Max) Vce(sat) (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Operating Temperature Package / Case Mounting Type RoHS Status Product Status
BD544A-S Bourns Inc. PNP 60 V 8 A 1V @ 1.6A, 8A 700µA 15 @ 5A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Obsolete
2N6109 PBFREE Central Semiconductor Corp PNP 50 V 7 A 3.5V @ 3A, 7A 1mA 30 @ 2.5A, 4V 40 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Obsolete
2N6490G onsemi PNP 60 V 15 A 3.5V @ 5A, 15A 1mA 20 @ 5A, 4V 1.8 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Obsolete
MJE2955T NTE Electronics, Inc PNP 60 V 10 A 8V @ 3.3A, 10A 700µA 20 @ 4A, 4V 75 W -55°C ~ 150°C (TJ) TO-220-3 Through Hole RoHS non-compliant Active
MJE2955TG onsemi PNP 60 V 10 A 8V @ 3.3A, 10A 700µA 20 @ 4A, 4V 75 W -55°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Active
TIP32AG onsemi PNP 60 V 3 A 1.2V @ 375mA, 3A 300µA 10 @ 3A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Active
TIP42A NTE Electronics, Inc PNP 60 V 6 A 1.5V @ 600mA, 6A 700µA 15 @ 3A, 4V 2 W 150°C (TJ) TO-220-3 Through Hole RoHS non-compliant Active
TIP42A-BP Micro Commercial Co PNP 60 V 6 A 1.5V @ 600mA, 6A 700µA 30 @ 300mA, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole Not specified Active
TIP42AG onsemi PNP 60 V 6 A 1.5V @ 600mA, 6A 700µA 15 @ 3A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 Compliant Active

Engineering Selection Recommendations

BD544A-S is designated as Obsolete. Substitute parts with an Active status, ROHS3 Compliant classification, and matching mechanical and electrical characteristics provided above can be selected for direct replacement, subject to compliance requirements and inventory availability.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters are critical when selecting an equivalent transistor for BD544A-S?
A1: Critical parameters include transistor type (PNP), collector-emitter breakdown voltage (Vce), maximum collector current (Ic), power dissipation, DC current gain (hFE) at specified current and voltage, and collector-emitter saturation voltage (Vce(sat)) at a given base and collector current.

Q2: Why is the package type and mounting important for substitution?
A2: Mechanical compatibility ensures that the substitute fits the existing PCB footprint and can operate with the same cooling and mounting infrastructure. All substitutes here use the TO-220-3 through-hole package.

Q3: Are the listed substitute transistors direct replacements for the BD544A-S?
A3: Listed substitutes match the BD544A-S in transistor type, package, and the majority of key electrical parameters, based strictly on the input data. Selection should be aligned with these specified characteristics.

Q4: How do RoHS and product status affect selection?
A4: For applications requiring compliance with hazardous substance regulations, only RoHS-compliant and Active substitutes from the list should be used. Product status indicates ongoing manufacturer support.

Q5: Is matching DC current gain (hFE) always required?
A5: Substitution requires hFE to meet or exceed the minimum specified for the main part at the stated test conditions, as per the provided data.

Q6: Can substitutes be used interchangeably in all applications?
A6: Only if all explicitly listed parameters (electrical and mechanical) strictly match those required for the application, as given in the provided tables. No assumptions beyond the provided parameters are to be made.

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