BD441 Equivalent & Substitute Parts

Part Overview

The BD441 is a Bipolar (BJT) NPN transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current. The device is packaged in TO-126 through-hole configuration and delivers 36 W maximum power dissipation with a 3 MHz transition frequency. The BD441 is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity.

Substiute Parts

BD441

onsemiIn Stock: 2329BD441 Datasheet

Current PartRFQ

BD441G

onsemiIn Stock: 2834BD441G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD441 is determined by electrical and mechanical parameter equivalence. The BD441G qualifies as a direct substitute based on identical electrical specifications across all critical parameters: NPN transistor type, 4 A maximum collector current, 80 V collector-emitter breakdown voltage, 800 mV saturation voltage at specified bias conditions, 100 µA collector cutoff current, 40 minimum DC current gain, 36 W maximum power dissipation, 3 MHz transition frequency, and -55°C to 150°C operating temperature range. Both devices utilize identical through-hole mounting and TO-126 packaging. The substitution is valid based on matching all provided electrical and mechanical parameters without exception.

Parameter Comparison

Engineering Selection Recommendations

The BD441 is classified as obsolete, while the BD441G is an active product. For new designs and ongoing procurement, the BD441G is the appropriate selection. Both devices are manufactured by onsemi and share identical electrical and mechanical specifications. The BD441G carries ROHS3 compliance status, whereas the BD441 is RoHS non-compliant. Both parts maintain REACH Unaffected status and EAR99 ECCN classification. The BD441G is available in bulk packaging with 2800 pieces in stock, compared to 2300 pieces of the obsolete BD441. Direct substitution is supported by complete parameter equivalence across all electrical ratings and physical form factors.

Frequently Asked Questions (FAQ)

Q: Can BD441G replace BD441 in existing designs?

A: Yes. The BD441G is a direct substitute for the BD441. All electrical parameters, including collector current rating, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency, are identical. Both devices use the same TO-126 through-hole package.

Q: What is the primary difference between BD441 and BD441G?

A: The BD441 is obsolete, while the BD441G is an active product. The BD441G also carries ROHS3 compliance, whereas the BD441 is RoHS non-compliant. Electrical and mechanical specifications are identical.

Q: Are there any package compatibility concerns?

A: No. Both the BD441 and BD441G use identical TO-126-3 packaging with through-hole mounting. Pin configuration and physical dimensions are equivalent, allowing direct board-level substitution without layout modifications.

Q: What are the critical electrical parameters for substitution?

A: Substitution is valid when the following parameters match: NPN transistor type, 4 A maximum collector current, 80 V collector-emitter breakdown voltage, 800 mV saturation voltage at specified bias conditions, 100 µA collector cutoff current, 40 minimum DC current gain, 36 W maximum power dissipation, and 3 MHz transition frequency.

Q: Is the BD441G suitable for the full operating temperature range of the original BD441?

A: Yes. The BD441G operates across the identical temperature range of -55°C to 150°C junction temperature, matching the thermal specifications of the BD441.