BD435 Equivalent & Substitute Parts

Part Overview

The BD435 is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. The device is rated for 32 V collector-emitter breakdown voltage, 4 A maximum collector current, and 36 W maximum power dissipation in a Through Hole TO-126 package. The BD435 is classified as an obsolete product, necessitating identification of equivalent substitute components for ongoing design support and procurement requirements.

Substiute Parts

BD435

onsemiIn Stock: 44179BD435 Datasheet

Current PartRFQ

BD435G

onsemiIn Stock: 3341BD435G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD435 is determined by electrical and mechanical parameter equivalence within the NPN BJT category. The critical parameters governing substitution are:

• Transistor Type: NPN configuration
• Current Rating: 4 A maximum collector current
• Voltage Rating: 32 V collector-emitter breakdown voltage
• Power Dissipation: 36 W maximum
• DC Current Gain: 85 minimum at specified conditions
• Saturation Voltage: 500mV maximum at rated conditions
• Package Type: TO-126 Through Hole mounting
• Operating Temperature Range: -55°C to 150°C

Substitute parts must match all electrical specifications and physical package requirements to ensure direct functional equivalence without circuit modification.

Parameter Comparison

Engineering Selection Recommendations

The BD435G serves as a direct electrical and mechanical equivalent to the BD435. Both devices are classified as obsolete products and share identical electrical specifications across all rated parameters. The primary distinction between the two parts is regulatory compliance status: the BD435G is ROHS3 compliant, whereas the original BD435 is RoHS non-compliant. Both parts maintain REACH Unaffected status and identical ECCN and HTSUS classifications.

For applications requiring RoHS compliance or environmental regulatory adherence, the BD435G is the appropriate selection. For legacy systems or applications without RoHS requirements, either part provides equivalent electrical performance. Both devices are Through Hole mounted in TO-126 packages and operate across the identical temperature range of -55°C to 150°C.

Frequently Asked Questions (FAQ)

Q: Can BD435G replace BD435 in existing designs?

A: Yes. The BD435G is electrically and mechanically equivalent to the BD435. All electrical parameters, including current rating, voltage rating, power dissipation, gain, and saturation characteristics, are identical. Both use the same TO-126 Through Hole package.

Q: What is the primary difference between BD435 and BD435G?

A: The BD435G is ROHS3 compliant, while the BD435 is RoHS non-compliant. Electrical specifications are identical.

Q: Are there any package or pinout differences?

A: No. Both the BD435 and BD435G use the TO-225AA and TO-126-3 package designations with identical Through Hole mounting configurations.

Q: Can these parts be used interchangeably on PCBs?

A: Yes. The identical TO-126 package footprint and pin configuration allow direct substitution without PCB layout modifications.

Q: What operating temperature range do these transistors support?

A: Both the BD435 and BD435G operate across a junction temperature range of -55°C to 150°C.

Q: Are there compliance considerations for part selection?

A: If RoHS compliance is required, the BD435G must be selected. The original BD435 is RoHS non-compliant. Both parts are REACH Unaffected.