BD38010STU Equivalent & Substitute Parts

Part Overview

The BD38010STU is an obsolete PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-126-3 through-hole package. The device is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 25 W. Due to its obsolete product status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	2	A
Power - Max	25	W
Vce Saturation (Max) @ Ib, Ic	1 V @ 100 mA, 1 A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150 mA, 2 V	—
Operating Temperature (Max)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the BD38010STU is determined by the following critical parameters: PNP transistor type, 80 V collector-emitter breakdown voltage rating, through-hole mounting configuration, and compatible package geometry. The maximum collector current rating and power dissipation capacity establish the upper performance boundaries for acceptable substitutes.

Substitute parts are grouped into two categories based on electrical performance alignment:

Category 1: Direct Current Rating Substitutes — Parts with collector current ratings at or above 1.5 A and power ratings supporting the original 25 W specification, maintaining full electrical compatibility within the 80 V voltage class.

Category 2: Reduced Current Substitutes — Parts with collector current ratings between 1 A and 1.5 A, suitable for applications where the full 2 A capability is not required, with power ratings of 1.25 W to 30 W.

All substitute parts maintain the 80 V collector-emitter breakdown voltage, PNP configuration, and through-hole mounting type. Package variations (TO-126-3 versus TO-126 versus SOT-32-3) are noted as mechanical considerations for circuit board layout compatibility.

Parameter Comparison

Parameter	BD38010STU (Main)	2N4920G	BD14010STU	BD140G	BD140 (STMicroelectronics)
Manufacturer	onsemi	onsemi	onsemi	onsemi	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V	80 V
Current - Collector (Ic) (Max)	2 A	1 A	1.5 A	1.5 A	1.5 A
Power - Max	25 W	30 W	1.25 W	1.25 W	1.25 W
Vce Saturation (Max) @ Ib, Ic	1 V @ 100 mA, 1 A	600 mV @ 100 mA, 1 A	500 mV @ 50 mA, 500 mA	500 mV @ 50 mA, 500 mA	500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150 mA, 2 V	30 @ 500 mA, 1 V	63 @ 150 mA, 2 V	40 @ 150 mA, 2 V	40 @ 150 mA, 2 V
Operating Temperature (Max)	150°C	150°C	150°C	150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-126-3	TO-126	TO-126-3	TO-126	SOT-32-3
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For applications requiring full 2 A collector current capability: No active substitute maintains the original 2 A rating. The BD38010STU operates at the upper current limit of the 80 V PNP transistor class. Applications designed for 2 A operation require circuit redesign or parallel transistor configurations using available substitutes.

For applications operating at 1.5 A or below: BD14010STU (onsemi, TO-126-3 package) and BD140G (onsemi, TO-126 package) provide direct electrical equivalence with active product status and ROHS3 compliance. Both maintain the 80 V voltage rating and support the required current levels. BD14010STU preserves the original TO-126-3 package geometry for direct board-level replacement.

For applications operating at 1 A or below: 2N4920G (onsemi, TO-126 package) provides active product status with 30 W power rating and ROHS3 compliance. This part operates within reduced current specifications but maintains voltage compatibility.

For applications with extended temperature range requirements: BD140G (onsemi) specifies operating temperature range of −55°C to 150°C, compared to the original 150°C maximum. This part accommodates wider environmental conditions.

For alternative package geometry: BD140 (STMicroelectronics, SOT-32-3 package) provides electrical equivalence with SOT-32-3 package configuration. This part requires circuit board layout modification but maintains electrical performance within the 1.5 A current class.

All active substitutes carry REACH Unaffected and EAR99 ECCN classifications matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can BD14010STU directly replace BD38010STU in all applications?

A: BD14010STU is electrically compatible for applications operating at collector currents of 1.5 A or below. The original BD38010STU is rated for 2 A maximum collector current. Applications requiring the full 2 A capability require circuit modification. BD14010STU maintains identical voltage rating (80 V), package type (TO-126-3), and operating temperature maximum (150°C).

Q: What is the difference between BD140G and BD14010STU?

A: Both parts are onsemi PNP transistors rated for 80 V and 1.5 A. BD14010STU uses TO-126-3 package and is supplied in tube packaging. BD140G uses TO-126 package and is supplied in bulk packaging. DC current gain specifications differ slightly (63 minimum versus 40 minimum at 150 mA, 2 V). BD140G specifies extended operating temperature range (−55°C to 150°C) compared to BD14010STU (150°C maximum).

Q: Why does 2N4920G have lower collector current rating than the original part?

A: 2N4920G is rated for 1 A maximum collector current, compared to BD38010STU's 2 A rating. This reflects different design specifications within the 80 V PNP transistor class. 2N4920G provides 30 W power rating and 3 MHz transition frequency. Selection depends on application current requirements.

Q: Are package differences between TO-126-3, TO-126, and SOT-32-3 significant for substitution?

A: Package geometry differences require circuit board layout verification. TO-126-3 and TO-126 are mechanically similar with pin spacing compatibility for most applications. SOT-32-3 (BD140 from STMicroelectronics) uses different lead configuration and requires board layout modification. Pin assignment and thermal characteristics must be verified against the original design.

Q: What is the impact of different Vce saturation specifications?

A: BD38010STU specifies 1 V saturation voltage at 100 mA base current and 1 A collector current. Substitute parts specify 500 mV to 600 mV saturation voltage at different test conditions. Lower saturation voltage indicates improved switching efficiency and reduced power dissipation in saturated operation. Applications sensitive to saturation voltage must verify compatibility with circuit design parameters.

Q: Are all substitute parts RoHS compliant?

A: All active substitute parts (2N4920G, BD14010STU, BD140G, and BD140 from STMicroelectronics) carry ROHS3 Compliant certification. The original BD38010STU does not specify RoHS status. This compliance difference may be relevant for applications subject to RoHS regulatory requirements.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: Substitutes are not interchangeable without circuit verification. Current rating differences (1 A versus 1.5 A versus 2 A) and saturation voltage variations affect circuit performance. Package geometry differences require board layout confirmation. Each substitute must be evaluated against specific application requirements for collector current, power dissipation, and thermal management.

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