BD244C-S Equivalent & Substitute Parts Reference

Part Overview

The BD244C-S is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 100 V, collector current capability of 6 A, and a through-hole TO-220 package. This component, classified under Transistors, Bipolar (BJT), is designated by Bourns Inc. as Obsolete. Due to its obsolete status and potential supply chain limitations, it is necessary to identify suitable equivalent or substitute BJT transistors that closely match its specified key electrical and mechanical parameters.

Substiute Parts

BD244C-S
Bourns Inc.In Stock: 1033BD244C-S Datasheet
BD244C-S
Current Part
BD244CG
onsemiIn Stock: 2156BD244CG Datasheet
BD244CG
Direct
TIP42C-BP
Micro Commercial CoIn Stock: 4769TIP42C-BP Datasheet
TIP42C-BP
Direct
TIP42CG
onsemiIn Stock: 1494TIP42CG Datasheet
TIP42CG
Direct
BD912
NTE Electronics, IncIn Stock: 1965BD912 Datasheet
BD912
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MJE15029G
onsemiIn Stock: 10135MJE15029G Datasheet
MJE15029G
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TIP30CG
onsemiIn Stock: 8056TIP30CG Datasheet
TIP30CG
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TIP32C
STMicroelectronicsIn Stock: 45579TIP32C Datasheet
TIP32C
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TIP32CG
onsemiIn Stock: 20166TIP32CG Datasheet
TIP32CG
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Key Parameters

ParameterValue
Transistor TypePNP
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 6A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A, 4V
Power - Max2 W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Operating Temperature-65°C ~ 150°C (TJ)
RoHS StatusROHS3 Compliant

Substitute Part Grouping Explanation

All substitute and equivalent transistors are selected strictly based on the following input parameters: Transistor Type (PNP), Collector Current (Ic), Collector-Emitter Breakdown Voltage (Vce), Vce Saturation Voltage, DC Current Gain (hFE), Power Dissipation, mounting type (Through Hole), package type (TO-220-3 or equivalent), and RoHS compliance where specified. Substitute relationships are valid only if these parameters match or exceed those of BD244C-S as provided.

Parameter Comparison

Part Number Manufacturer Transistor Type Ic (Max) Vce (Max) Vce (Sat) Ic Cutoff (Max) hFE (Min) Power (Max) Mounting Type Package / Case Operating Temp RoHS Status Product Status
BD244C-S Bourns Inc. PNP 6 A 100 V 1.5V @ 1A, 6A 700µA 15 @ 3A, 4V 2 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Obsolete
BD244CG onsemi PNP 6 A 100 V 1.5V @ 1A, 6A 700µA 15 @ 3A, 4V 65 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Active
TIP42C-BP Micro Commercial Co PNP 6 A 100 V 1.5V @ 600mA, 6A 700µA 15 @ 3A, 4V 2 W Through Hole TO-220-3 150°C (TJ) ROHS3 Compliant Active
TIP42CG onsemi PNP 6 A 100 V 1.5V @ 600mA, 6A 700µA 15 @ 3A, 4V 2 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Active
BD912 NTE Electronics, Inc PNP 15 A 100 V 3V @ 2.5A, 10A 1mA 40 @ 500mA, 4V 90 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) RoHS non-compliant Active
MJE15029G onsemi PNP 8 A 120 V 500mV @ 100mA, 1A 100µA 20 @ 4A, 2V 50 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Active
TIP30CG onsemi PNP 1 A 100 V 700mV @ 125mA, 1A 300µA 15 @ 1A, 4V 2 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Active
TIP32C STMicroelectronics PNP 3 A 100 V 1.2V @ 375mA, 3A 300µA 10 @ 3A, 4V 2 W Through Hole TO-220-3 150°C (TJ) ROHS3 Compliant Active
TIP32CG onsemi PNP 3 A 100 V 1.2V @ 375mA, 3A 300µA 10 @ 3A, 4V 2 W Through Hole TO-220-3 -65°C ~ 150°C (TJ) ROHS3 Compliant Active

Engineering Selection Recommendations

For the BD244C-S, which is classified as obsolete, selection of replacement transistors should be based on matching key parameters and ensuring product compliance where required. Preference should be given to active status parts with ROHS3 compliance for environmentally regulated applications. Non-compliant or obsolete alternatives are only appropriate when compliance is not a requirement.

Frequently Asked Questions (FAQ)

Q1: What key parameters determine a valid substitute for BD244C-S?
A1: Required parameters are PNP transistor type, maximum collector current (Ic), collector-emitter breakdown voltage (Vce), Vce saturation voltage, minimum DC current gain (hFE), power dissipation, through-hole mounting, TO-220-3 or equivalent package, and RoHS compliance status.

Q2: Are all TO-220-3 PNP BJTs interchangeable as substitutes?
A2: Only devices matching or exceeding the specified electrical parameters (Ic, Vce, hFE, power) and sharing the same mounting and package are valid substitutes.

Q3: What role does RoHS compliance play in selection?
A3: RoHS compliance is required for applications subject to environmental regulation; only ROHS3 compliant transistors should be selected for these cases.

Q4: Can higher-rated transistors be used as substitutes?
A4: Substitutes with higher ratings for current, voltage, or power are valid, provided all other key parameters match.

Q5: How does the obsolete status impact replacement?
A5: Obsolete status indicates that sourcing BD244C-S may become difficult; alternatives with active production status are recommended for continued availability.

Q6: Is package variation within TO-220 series significant?
A6: Variations within the TO-220-3 or equivalent packages are acceptable as long as the physical and footprint compatibility is maintained according to specified parameters.

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