Equivalent & Substitute Parts Reference for BD241E-S

Part Overview

BD241E-S (Bourns Inc.) is an NPN Bipolar (BJT) Transistor with 140 V maximum collector-emitter breakdown voltage and 3 A maximum collector current, housed in a TO-220 through-hole package. It is categorized in "Transistors, Bipolar (BJT)" and features a power rating of 2 W with a minimum hFE of 25 at 1A, 4V. The product status is "Obsolete," which necessitates identification of alternative models for current applications and inventory replenishment. Substitute and equivalent transistors must maintain compatibility in electrical, mechanical, and compliance parameters.

Key Parameters

Parameter	BD241E-S Value	Description
Transistor Type	NPN	Bipolar Junction Transistor configuration
Current - Collector (Ic) (Max)	3 A	Maximum collector current
Voltage - Collector Emitter Breakdown (Max)	140 V	Maximum voltage between collector and emitter
Vce Saturation (Max) @ Ib, Ic	2.5V @ 750mA, 3A	Maximum saturation voltage at specified base and collector current
Current - Collector Cutoff (Max)	300µA	Maximum collector cutoff current
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V	Minimum current gain at specified collector current and voltage
Power - Max	2 W	Maximum power dissipation
Mounting Type	Through Hole	PCB mounting method
Package / Case	TO-220-3	Package designation
RoHS Status	ROHS3 Compliant	Compliance with RoHS regulations

Substitute Part Grouping Explanation

Substitute parts for BD241E-S are selected strictly based on alignment in the following key parameters: transistor type (NPN), maximum collector current (Ic), maximum collector-emitter breakdown voltage (Vce), saturation voltage, cutoff current, minimum DC current gain (hFE), maximum power dissipation, mounting type (Through Hole), package/case (TO-220-3), and RoHS3 compliance. Only transistors that match these criteria within provided electrical and mechanical limits are identified as substitutes.

Parameter Comparison

Parameter	BD241E-S (Bourns Inc.)	BD241CG (onsemi)	MJE15030G (onsemi)	TIP31CG (onsemi)
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	3 A	3 A	8 A	3 A
Voltage - Collector Emitter Breakdown (Max)	140 V	100 V	150 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 750mA, 3A	1.2V @ 600mA, 3A	500mV @ 100mA, 1A	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	300µA	300µA	100µA	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V	25 @ 1A, 4V	20 @ 4A, 2V	10 @ 3A, 4V
Power - Max	2 W	40 W	50 W	2 W
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BD241E-S is currently obsolete. Substitute selection must prioritize active status and RoHS3 compliance. BD241CG, MJE15030G, and TIP31CG are all active, RoHS3-compliant options in the same category and package. Only parameters listed in the provided input have been considered for compatibility.

Frequently Asked Questions (FAQ)

Q1: What are the necessary parameters for selecting an equivalent replacement for BD241E-S?
A1: Parameters required for substitution include transistor type (NPN), maximum collector current (Ic), collector-emitter breakdown voltage (Vce), DC current gain (hFE), power rating, mounting type (Through Hole), package/case (TO-220-3), and RoHS3 compliance.

Q2: Are all substitute parts in the same package as BD241E-S?
A2: Yes, all listed substitutes use the TO-220-3 package through-hole mounting.

Q3: Is compliance with RoHS3 mandatory for substitution?
A3: All substitutes provided are RoHS3 compliant, matching the compliance status of BD241E-S.

Q4: How does product status affect substitute selection?
A4: Since BD241E-S is obsolete, substitutes must be active to ensure future availability.

Q5: Are mechanical and electrical compatibility both strictly observed in this substitute list?
A5: Yes, only provided electrical and mechanical parameters are used for equivalency determination. No other criteria are introduced.

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