BD241ATU Equivalent & Substitute Parts

Part Overview

The BD241ATU is an NPN bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 3 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. The BD241ATU delivers 40 W maximum power dissipation and operates at junction temperatures up to 150°C.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60 V
Current - Collector (Ic) (Max)	3 A
Power - Max	40 W
Vce Saturation (Max)	1.2 V @ 600 mA, 3 A
DC Current Gain (hFE) (Min)	25 @ 1 A, 4 V
Current - Collector Cutoff (Max)	300 µA
Operating Temperature (Max)	150°C (TJ)
Package / Case	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the BD241ATU is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Transistor type: NPN
Voltage rating: 60 V collector-emitter breakdown (maximum)
Current rating: 3 A collector current (maximum)
Package: TO-220-3 through-hole
Mounting type: Through hole

Secondary Compatibility Parameters:

Vce saturation characteristics
DC current gain (hFE)
Collector cutoff current
Operating temperature range
Power dissipation capability

Substitute parts must maintain electrical compatibility within the specified voltage and current ratings. Parts exceeding these ratings may be used in applications where the BD241ATU operates, provided the circuit design accommodates the substitute's characteristics. Parts with lower ratings are not suitable substitutes.

Parameter Comparison

Parameter	BD241ATU	TIP31AG	TIP31A	2N6487G
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V	60 V
Current - Collector (Ic) (Max)	3 A	3 A	3 A	15 A
Power - Max	40 W	2 W	40 W	1.8 W
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 600 mA, 3 A	1.2 V @ 375 mA, 3 A	1.2 V @ 375 mA, 3 A	3.5 V @ 5 A, 15 A
Current - Collector Cutoff (Max)	300 µA	300 µA	300 µA	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1 A, 4 V	10 @ 3 A, 4 V	25 @ 1 A, 4 V	20 @ 5 A, 4 V
Operating Temperature (Max)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

Direct Substitutes (Electrical Equivalence):

TIP31A (Solid State Inc.) provides the closest electrical match to the BD241ATU. Both devices share identical maximum collector current (3 A), collector-emitter breakdown voltage (60 V), power dissipation (40 W), and DC current gain specifications (25 @ 1 A, 4 V). TIP31A is active in production with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), supporting long-term design continuity.

TIP31AG (onsemi) maintains electrical equivalence in voltage and current ratings with identical Vce saturation and collector cutoff current specifications. Power dissipation is rated at 2 W, which is lower than the BD241ATU's 40 W rating. TIP31AG is active in production with RoHS3 compliance.

Functional Substitutes (Higher Current Capability):

2N6487G (onsemi) operates at the same 60 V voltage rating but supports 15 A maximum collector current, exceeding the BD241ATU's 3 A specification. This device is active in production with RoHS3 compliance. The higher current rating and lower power dissipation (1.8 W) indicate different thermal and switching characteristics. Use of 2N6487G in BD241ATU applications is limited to circuits where the higher current capability does not introduce design complications.

Compliance Status:

All substitute parts maintain REACH Unaffected status and EAR99 export classification. TIP31A and TIP31AG carry RoHS3 compliance certification. The BD241ATU carries no RoHS certification due to its obsolete status.

Frequently Asked Questions (FAQ)

Q: Can TIP31A directly replace BD241ATU in all applications?

A: TIP31A meets the electrical specifications of BD241ATU across voltage (60 V), current (3 A), power (40 W), and DC current gain (25 @ 1 A, 4 V). Both use TO-220-3 through-hole packaging. Direct substitution is supported for applications operating within these rated parameters.

Q: What is the difference between TIP31AG and TIP31A?

A: Both devices share identical electrical ratings for voltage, current, and saturation characteristics. TIP31AG is manufactured by onsemi; TIP31A is manufactured by Solid State Inc. TIP31AG specifies 2 W maximum power dissipation, while TIP31A specifies 40 W. TIP31A is recommended for applications requiring the full 40 W power capability of the original BD241ATU.

Q: Why is 2N6487G listed as a substitute if it has different current and power ratings?

A: 2N6487G maintains the same 60 V voltage rating and NPN transistor type in TO-220-3 packaging. Its 15 A current capability exceeds the BD241ATU's 3 A rating, making it suitable for applications where higher current handling is beneficial. However, its 1.8 W power dissipation differs significantly from the BD241ATU's 40 W rating, indicating different thermal characteristics. Selection of 2N6487G requires circuit-level evaluation.

Q: Are all substitute parts available in the same package?

A: All substitute parts use TO-220-3 through-hole packaging, matching the BD241ATU's mechanical form factor. Pin configuration and mounting orientation are identical across all listed devices.

Q: What is the significance of the BD241ATU's obsolete status?

A: Obsolete status indicates the BD241ATU is no longer in active production. Substitute parts listed here are all active in production, ensuring long-term availability and design support. Selection of an active substitute part is recommended for new designs and production continuity.

Q: How do DC current gain differences affect substitution?

A: BD241ATU specifies minimum hFE of 25 @ 1 A, 4 V. TIP31A matches this specification exactly. TIP31AG specifies 10 @ 3 A, 4 V, indicating lower gain at higher collector current. 2N6487G specifies 20 @ 5 A, 4 V. Circuits designed for the BD241ATU's gain characteristics should prioritize TIP31A to maintain identical amplification behavior.

Q: Are there thermal considerations when substituting these devices?

A: Power dissipation ratings differ among substitutes. BD241ATU and TIP31A both specify 40 W maximum power. TIP31AG specifies 2 W; 2N6487G specifies 1.8 W. Applications requiring full 40 W dissipation must use TIP31A. Lower-power applications may use any substitute, but thermal management design should account for the specified power rating of the selected device.

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