BD241A-S Equivalent & Substitute Parts Reference

Part Overview

The BD241A-S is an NPN bipolar junction transistor (BJT) manufactured by Bourns Inc., classified within the Transistors, Bipolar (BJT) category. Its key application aspects include a collector-emitter voltage of 60 V, maximum collector current of 3 A, a minimum current gain (hFE) of 25 at 1A and 4V, power dissipation up to 2 W, and TO-220 through-hole packaging.
This device is currently listed as Obsolete. For ongoing production, maintenance, or design requirements, the identification of equivalent or substitute NPN BJTs with matching key parameters is necessary.

Substiute Parts

BD241A-S
Bourns Inc.In Stock: 911BD241A-S Datasheet
BD241A-S
Current Part
2N6292G
onsemiIn Stock: 20372N6292G Datasheet
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2N6487G
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2ST31A
STMicroelectronicsIn Stock: 31712ST31A Datasheet
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D44H8
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MJE3055T
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MJE3055TG
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TIP29A
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TIP29AG
onsemiIn Stock: 3064TIP29AG Datasheet
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TIP31A
Solid State Inc.In Stock: 49340TIP31A Datasheet
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TIP31AG
onsemiIn Stock: 2042TIP31AG Datasheet
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TIP41AG
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Key Parameters

ParameterBD241A-S Value
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Vce)60 V
Collector Current (Ic) Max3 A
Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
Collector Cutoff Current (Max)300µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Power Dissipation (Max)2 W
Operating Temperature-65°C ~ 150°C (TJ)
Package / CaseTO-220-3
Mounting TypeThrough Hole
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product StatusObsolete

Substitute Part Grouping Explanation

Substitution for BD241A-S is determined by the following key parameters:

  • Transistor Type (NPN)
  • Collector-Emitter Breakdown Voltage (≥ 60 V)
  • Collector Current (Ic) (≥ 3 A)
  • DC Current Gain (hFE) (≥ 25 or close at comparable conditions)
  • Power Dissipation (≥ 2 W)
  • Package/Case (TO-220-3)
  • Mounting Type (Through Hole)
  • RoHS and MSL Compliance

Only substitute transistors meeting these criteria are listed.

Parameter Comparison

Manufacturer Part Number Transistor Type Vce (Max) Ic (Max) Vce(Sat) (Max) @ Ib, Ic Collector Cutoff I (Max) hFE (Min) @ Ic, Vce Power - Max Operating Temp Package / Case Mounting RoHS MSL Product Status
BD241A-S NPN 60 V 3 A 1.2V @ 600mA, 3A 300µA 25 @ 1A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 1 Obsolete
2N6292G NPN 70 V 7 A 3.5V @ 3A, 7A 1mA 30 @ 2A, 4V 40 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
2N6487G NPN 60 V 15 A 3.5V @ 5A, 15A 1mA 20 @ 5A, 4V 1.8 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
2ST31A NPN 60 V 3 A 1.2V @ 375mA, 3A 300µA 100 @ 20mA, 4V 40 W 150°C (TJ) TO-220-3 Through Hole ROHS3 1 Active
D44H8 NPN 60 V 10 A 1V @ 400mA, 8A 10µA 40 @ 4A, 1V 50 W 150°C (TJ) TO-220-3 Through Hole ROHS3 1 Active
MJE3055T NPN 60 V 10 A 8V @ 3.3A, 10A 700µA 20 @ 4A, 4V 75 W -55°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
MJE3055TG NPN 60 V 10 A 8V @ 3.3A, 10A 700µA 20 @ 4A, 4V 75 W -55°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
TIP29A NPN - - - - - - - TO-220-3 Through Hole ROHS3 1 Active
TIP29AG NPN 60 V 1 A 700mV @ 125mA, 1A 300µA 15 @ 1A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
TIP31A NPN 60 V 3 A 1.2V @ 375mA, 3A 300µA 25 @ 1A, 4V 40 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 1 Active
TIP31AG NPN 60 V 3 A 1.2V @ 375mA, 3A 300µA 10 @ 3A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Active
TIP41AG NPN 60 V 6 A 1.5V @ 600mA, 6A 700µA 15 @ 3A, 4V 2 W -65°C ~ 150°C (TJ) TO-220-3 Through Hole ROHS3 NA Last Time Buy

Engineering Selection Recommendations

Given that BD241A-S is classified as Obsolete, all substitute products listed are evaluated based on matching key parameters, RoHS3 environmental compliance, and comparable MSL. Where available, device status (Active, Last Time Buy) is noted to assist with sustained sourcing. Only products with appropriate status, package, compliance, and key parameter alignment are included.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters are critical for substitution of the BD241A-S transistor?
A1: Key criteria are: NPN polarity, minimum 60 V collector-emitter voltage, at least 3 A collector current, comparable current gain (hFE), matching power dissipation capability, and equivalent TO-220-3 package.

Q2: Are all substitute parts compliant with RoHS requirements?
A2: All listed substitute part numbers are RoHS3 Compliant.

Q3: Is the physical form factor of substitute transistors consistent with BD241A-S?
A3: Yes, all substitutes are provided in TO-220-3 through-hole packaging.

Q4: How is part status considered in the selection of substitutes?
A4: Substitute devices are noted as Active, Last Time Buy, or Obsolete. Selection can be based on availability as indicated by their product status.

Q5: Which minimum DC current gain values (hFE) are considered suitable for direct substitution?
A5: Substitutes with DC current gain at or above 25 at comparable test conditions, or the closest available match in the data provided, are included.

Q6: What should be considered regarding power handling and environmental characteristics?
A6: Only transistors with equal or greater power dissipation and comparable operating temperature range to BD241A-S are listed as substitutes. All have RoHS3 compliance and similar or better MSL ratings.

Q7: Are all electrical characteristics, such as frequency response, covered for substitution?
A7: Only the parameters provided in the input data, specifically those common to BD241A-S and substitutes, are included in the comparison and substitution process.

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