BD239C-S Equivalent & Substitute Parts

Part Overview

The BD239C-S is an NPN bipolar junction transistor manufactured by Bourns Inc., rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-220 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Active alternatives with identical or enhanced electrical specifications are available from multiple manufacturers.

Substiute Parts

BD239C-S
Bourns Inc.In Stock: 845BD239C-S Datasheet
BD239C-S
Current Part
BD239C
STMicroelectronicsIn Stock: 3807BD239C Datasheet
BD239C
Direct
BD239C
STMicroelectronicsIn Stock: 3807BD239C Datasheet
BD239C
Direct
BD239CTU
onsemiIn Stock: 1948BD239CTU Datasheet
BD239CTU
Direct
BD241C
STMicroelectronicsIn Stock: 8954BD241C Datasheet
BD241C
Similar
BD243CG
onsemiIn Stock: 1618BD243CG Datasheet
BD243CG
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BD911
NTE Electronics, IncIn Stock: 3764BD911 Datasheet
BD911
Similar
MJE15028G
onsemiIn Stock: 10212MJE15028G Datasheet
MJE15028G
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TIP29C
NTE Electronics, IncIn Stock: 21511TIP29C Datasheet
TIP29C
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TIP29CG
onsemiIn Stock: 1664TIP29CG Datasheet
TIP29CG
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TIP31C
Fairchild SemiconductorIn Stock: 69458TIP31C Datasheet
TIP31C
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TIP31CG
onsemiIn Stock: 6765TIP31CG Datasheet
TIP31CG
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TIP41C
NTE Electronics, IncIn Stock: 105158TIP41C Datasheet
TIP41C
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TIP41CG
onsemiIn Stock: 25120TIP41CG Datasheet
TIP41CG
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Key Parameters

Parameter BD239C-S Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 2 A
Power - Max 2 W
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Current - Collector Cutoff (Max) 300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V
Operating Temperature -65 to 150 °C
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BD239C-S is determined by strict equivalence or enhancement across the following critical parameters:

Primary Equivalence Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): ≥ 100 V
  • Current - Collector (Ic) (Max): ≥ 2 A
  • Package / Case: TO-220-3
  • Mounting Type: Through Hole

Secondary Compatibility Factors:

  • Vce Saturation characteristics within acceptable operating ranges
  • DC Current Gain (hFE) minimum specifications
  • Operating temperature range coverage
  • RoHS compliance status

Substitute parts are classified into two categories:

Direct Equivalents: Parts with identical electrical specifications (100 V, 2 A, 2 W) from active manufacturers.

Enhanced Substitutes: Parts with higher current ratings (3 A, 6 A, 8 A, 15 A) or power dissipation capabilities that maintain 100 V breakdown voltage and are pin-compatible in TO-220-3 packaging. These provide design margin and are suitable for applications requiring higher current capacity.

Parameter Comparison

Part Number Manufacturer Ic (Max) A Vce Breakdown V Power W Vce Sat @ Ib, Ic hFE (Min) @ Ic, Vce Package Status
BD239C-S Bourns Inc. 2 100 2 700mV @ 200mA, 1A 15 @ 1A, 4V TO-220-3 Obsolete
BD239C STMicroelectronics 2 100 2 700mV @ 200mA, 1A 15 @ 1A, 4V TO-220-3 Active
BD239CTU onsemi 2 100 30 700mV @ 200mA, 1A 15 @ 1A, 4V TO-220-3 Last Time Buy
BD241C STMicroelectronics 3 100 40 1.2V @ 600mA, 3A 10 @ 3A, 4V TO-220-3 Active
BD243CG onsemi 6 100 65 1.5V @ 1A, 6A 15 @ 3A, 4V TO-220-3 Active
BD911 NTE Electronics, Inc 15 100 90 3V @ 2.5A, 10A 40 @ 500mA, 4V TO-220-3 Active
MJE15028G onsemi 8 120 50 500mV @ 100mA, 1A 20 @ 4A, 2V TO-220-3 Active
TIP29C NTE Electronics, Inc 1 100 2 700mV @ 125mA, 1A 15 @ 1A, 4V TO-220-3 Active
TIP29CG onsemi 1 100 2 700mV @ 125mA, 1A 15 @ 1A, 4V TO-220-3 Active
TIP31C Fairchild Semiconductor 3 100 40 1.2V @ 375mA, 3A 10 @ 3A, 4V TO-220-3 Active

Engineering Selection Recommendations

Direct Replacement (Identical Specifications):

BD239C from STMicroelectronics is the primary direct equivalent to BD239C-S. This part maintains all electrical specifications (100 V, 2 A, 2 W) and is actively manufactured with ROHS3 compliance. Tube packaging is standard for production quantities.

Enhanced Substitutes with Higher Current Capacity:

For applications requiring design margin or higher current handling:

  • BD241C (STMicroelectronics): 3 A rating with 40 W power dissipation. Active status and ROHS3 compliance. Suitable for designs requiring 50% current headroom.

  • BD243CG (onsemi): 6 A rating with 65 W power dissipation and 3 MHz transition frequency. Active status. Appropriate for applications with significant current margin requirements.

  • TIP31C (Fairchild Semiconductor): 3 A rating with 40 W power dissipation and 3 MHz transition frequency. Active status with extensive inventory availability (69,348 units). Functionally equivalent to BD241C.

Higher Current Applications (Beyond 2 A Specification):

  • BD911 (NTE Electronics, Inc): 15 A rating with 90 W power dissipation and 3 MHz transition frequency. Active status. Note: RoHS non-compliant. Suitable only for applications where RoHS compliance is not required.

  • MJE15028G (onsemi): 8 A rating with 50 W power dissipation, 30 MHz transition frequency, and 120 V breakdown voltage. Active status with ROHS3 compliance and extensive inventory (10,104 units). Exceeds BD239C-S specifications across all parameters.

Lower Current Alternative:

TIP29C and TIP29CG are 1 A rated devices. These are not suitable as direct replacements for 2 A applications but are listed as cross-references in original documentation.

Compliance and Availability Considerations:

All recommended direct and enhanced substitutes maintain ROHS3 compliance except BD911. STMicroelectronics BD239C offers the most direct path for obsolete part replacement with active manufacturing status and established supply chain presence.

Frequently Asked Questions (FAQ)

Q: Can BD239C from STMicroelectronics be used as a direct replacement for BD239C-S?

A: Yes. BD239C maintains identical electrical specifications (100 V breakdown voltage, 2 A maximum collector current, 2 W power dissipation) and TO-220-3 packaging. Both are ROHS3 compliant. The primary difference is manufacturer (STMicroelectronics versus Bourns Inc.) and product status (Active versus Obsolete).

Q: What is the difference between BD239C and BD239CTU?

A: Both parts share identical electrical specifications and TO-220-3 packaging. BD239CTU is manufactured by onsemi with Last Time Buy status and rated for 30 W power dissipation compared to 2 W for standard BD239C. The higher power rating reflects thermal design improvements but does not alter electrical performance at rated 2 A operation.

Q: Can I use BD241C or TIP31C instead of BD239C-S?

A: Yes, with design considerations. Both parts are rated for 3 A maximum collector current and 40 W power dissipation, compared to 2 A and 2 W for BD239C-S. They maintain 100 V breakdown voltage and TO-220-3 packaging. These substitutes provide 50% additional current capacity and are suitable for applications where higher current margin is beneficial. Vce saturation characteristics differ slightly at higher currents.

Q: Are TIP29C and TIP29CG suitable replacements?

A: No. These parts are rated for 1 A maximum collector current, which is below the 2 A specification of BD239C-S. They are not suitable for applications requiring 2 A operation. They are listed as cross-references in original documentation but represent lower-current alternatives.

Q: What is the significance of the TO-220-3 package designation?

A: TO-220-3 indicates a three-lead through-hole package with standardized pin configuration (Base, Collector, Emitter). All substitute parts listed maintain this package standard, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Q: Can BD911 be used as a substitute?

A: BD911 is electrically compatible with 100 V breakdown voltage and TO-220-3 packaging, with significantly higher current rating (15 A) and power dissipation (90 W). However, BD911 is RoHS non-compliant. Use is restricted to applications where RoHS compliance is not a requirement.

Q: What is the advantage of MJE15028G over other substitutes?

A: MJE15028G provides the highest current capacity (8 A) and power dissipation (50 W) among active substitutes, with 120 V breakdown voltage exceeding the 100 V specification. It includes 30 MHz transition frequency and ROHS3 compliance. Extensive inventory availability (10,104 units) supports high-volume procurement. This part is suitable for applications requiring maximum performance margin.

Q: How do I select between multiple substitute options?

A: Selection depends on application requirements. For direct replacement in existing designs, use BD239C (STMicroelectronics). For applications requiring higher current capacity or power dissipation, select from BD241C, TIP31C, BD243CG, or MJE15028G based on specific current and thermal requirements. Verify Vce saturation characteristics and DC current gain specifications against circuit design parameters.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitutes are ROHS3 compliant except BD911, which is RoHS non-compliant. Verify compliance requirements for your application before final part selection.

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