BD234G Equivalent & Substitute Parts

Part Overview

The BD234G is a PNP bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 2 A maximum collector current. The device is packaged in TO-126 through-hole configuration and is rated for 25 W maximum power dissipation. The BD234G is currently in Last Time Buy status, indicating that production is being discontinued. Identification of equivalent substitute parts is necessary to ensure design continuity and procurement availability for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	45	V
Current - Collector (Ic) (Max)	2	A
Power - Max	25	W
Frequency - Transition	3	MHz
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—
Operating Temperature Range	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BD234G is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor polarity must be PNP
Package type must be TO-126 through-hole configuration
Mounting type must be through-hole
RoHS3 compliance status must be maintained

Functional Compatibility Criteria:

Collector-emitter breakdown voltage must equal or exceed 45 V
Maximum collector current must equal or exceed 2 A
Maximum power dissipation must equal or exceed 25 W
Transition frequency must equal or exceed 3 MHz
Operating temperature range must encompass or exceed -55°C to 150°C

The BD180G meets the mandatory packaging and polarity requirements. However, the BD180G exhibits reduced maximum collector current (1 A versus 2 A) and reduced Vce saturation voltage specification at the same test conditions. These differences indicate that the BD180G operates within a narrower current envelope and may not be suitable for all applications requiring the full 2 A current capability of the BD234G.

Parameter Comparison

Parameter	BD234G	BD180G	Unit
Transistor Type	PNP	PNP	—
Voltage - Collector Emitter Breakdown (Max)	45	80	V
Current - Collector (Ic) (Max)	2	1	A
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	800mV @ 100mA, 1A	—
Current - Collector Cutoff (Max)	100µA	1mA	—
DC Current Gain (hFE) (Min)	25 @ 1A, 2V	40 @ 150mA, 2V	—
Power - Max	25	30	W
Frequency - Transition	3	3	MHz
Operating Temperature Range	-55 to 150	-65 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-126-3	TO-126-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

BD234G Status: Last Time Buy. This product status indicates that onsemi has announced end-of-life for this component. New designs should not incorporate the BD234G. Existing designs utilizing BD234G require transition planning to alternative components.

BD180G Status: Active. This component is in active production and available for new designs.

Compliance Alignment: Both BD234G and BD180G maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory continuity in component selection.

Substitution Feasibility: The BD180G shares identical package configuration (TO-126-3), polarity (PNP), and mounting type (through-hole) with the BD234G. The BD180G provides higher collector-emitter breakdown voltage (80 V versus 45 V) and higher maximum power dissipation (30 W versus 25 W). However, the BD180G is rated for maximum collector current of 1 A, which is 50% lower than the BD234G specification of 2 A. Applications requiring collector currents exceeding 1 A cannot use the BD180G as a direct substitute.

Frequently Asked Questions (FAQ)

Q: Can the BD180G replace the BD234G in all applications?

A: No. The BD180G is rated for maximum collector current of 1 A, while the BD234G is rated for 2 A. Applications requiring collector currents between 1 A and 2 A cannot use the BD180G. Substitution is valid only for applications operating at collector currents not exceeding 1 A.

Q: Are the packages physically identical?

A: Yes. Both the BD234G and BD180G use the TO-126-3 package configuration with through-hole mounting. Physical board layout compatibility is maintained.

Q: What is the difference in collector-emitter breakdown voltage?

A: The BD234G is rated for 45 V maximum collector-emitter breakdown voltage. The BD180G is rated for 80 V. The BD180G provides higher voltage margin and can be used in applications with lower voltage requirements without derating concerns.

Q: Are there compliance differences between these parts?

A: No. Both parts maintain ROHS3 compliance and REACH unaffected status. Regulatory requirements are equivalent.

Q: What does Last Time Buy status mean for the BD234G?

A: Last Time Buy indicates that onsemi has announced discontinuation of the BD234G. Existing inventory may be available for a limited period, but new production will not occur. Designs currently using BD234G should transition to alternative components for long-term supply assurance.

Q: How do the saturation voltage characteristics compare?

A: The BD234G specifies 600 mV maximum Vce saturation at 100 mA base current and 1 A collector current. The BD180G specifies 800 mV under the same test conditions. The BD234G exhibits lower saturation voltage, which may be relevant in switching applications where saturation depth affects power dissipation.

Q: Can the BD180G be used in designs requiring 2 A collector current?

A: No. The BD180G maximum collector current rating is 1 A. Using the BD180G in applications requiring 2 A operation would exceed the component's absolute maximum rating and result in device failure.

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