BD180G Equivalent & Substitute Parts

Part Overview

The BD180G is an onsemi PNP bipolar junction transistor rated for 80 V collector-emitter breakdown voltage and 1 A maximum collector current. This device is packaged in TO-126 through-hole configuration and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 30 W. The BD180G maintains Active product status with 2290 units in current inventory.

Substitute parts become necessary when the BD180G reaches end-of-life status, when alternative packaging formats are required for manufacturing compatibility, or when enhanced electrical performance parameters are needed within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	1	A
Power - Max	30	W
Frequency - Transition	3	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	—
Vce Saturation (Max) @ Ib, Ic	800mV @ 100mA, 1A	—
Current - Collector Cutoff (Max)	1	mA
Operating Temperature Range	-65 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution eligibility for the BD180G is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 80 V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology.

Transistor Polarity: All substitutes must be PNP-type transistors to maintain circuit functionality without redesign.

Current Rating: Substitute parts must support a minimum collector current rating equal to or exceeding the 1 A requirement of the BD180G.

Mounting Configuration: Substitute parts must utilize through-hole mounting to maintain compatibility with existing printed circuit board layouts and assembly processes.

Package Compatibility: While the BD180G uses TO-126-3 packaging, substitute parts may use alternative through-hole packages (TO-225AA, SOT-32-3) provided they maintain the same pin configuration and mechanical footprint compatibility.

DC Current Gain: Substitute parts must maintain a minimum DC current gain (hFE) of 40 at the specified test conditions to ensure consistent amplification characteristics.

The BD14016S and BD140 devices meet these substitution criteria while offering enhanced or equivalent electrical performance within the 80 V / 1+ A PNP transistor class.

Parameter Comparison

Parameter	BD180G (Main)	BD14016S	BD140 (STMicroelectronics)
Manufacturer	onsemi	onsemi	STMicroelectronics
Transistor Type	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Current - Collector (Ic) (Max)	1 A	1.5 A	1.5 A
Power - Max	30 W	1.25 W	1.25 W
Frequency - Transition	3 MHz	—	—
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	40 @ 150mA, 2V	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100mA, 1A	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	1 mA	100 nA	100 nA
Operating Temperature Range	-65 to 150°C	—	—
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-126-3	TO-126-3	SOT-32-3
Product Status	Active	Last Time Buy	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

BD14016S (onsemi): This device provides direct package compatibility with the BD180G in TO-126-3 configuration and maintains identical DC current gain specifications. The BD14016S supports 1.5 A collector current, exceeding the BD180G requirement. However, the BD14016S carries Last Time Buy product status, indicating limited future availability. This substitute is suitable for immediate replacement applications where existing inventory can be secured. The reduced power rating (1.25 W versus 30 W) requires verification that circuit power dissipation does not exceed this specification.

BD140 (STMicroelectronics): This device maintains Active product status with substantial inventory availability (76205 units). The BD140 meets all critical electrical parameters including 80 V breakdown voltage, 1.5 A collector current, and 40 minimum DC current gain. The SOT-32-3 package differs from the BD180G TO-126-3 configuration; however, both are through-hole packages with compatible pin assignments. The BD140 is suitable for new designs and long-term production applications requiring sustained component availability. The reduced power rating (1.25 W) applies the same constraint as the BD14016S.

Both substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the BD180G.

Frequently Asked Questions (FAQ)

Q: Can the BD14016S directly replace the BD180G without circuit modification?

A: The BD14016S provides electrical substitution within the 80 V / 1+ A PNP transistor class and uses identical TO-126-3 packaging. Direct replacement is possible for applications where the 1.25 W power rating is sufficient. The reduced power dissipation capability must be evaluated against circuit requirements.

Q: What is the primary difference between the BD140 and BD180G?

A: The BD140 uses SOT-32-3 through-hole packaging instead of TO-126-3. Both packages maintain compatible pin configurations and through-hole mounting. The BD140 supports 1.5 A collector current versus 1 A for the BD180G. The BD140 power rating is 1.25 W compared to 30 W for the BD180G.

Q: Is the BD140 package compatible with existing BD180G circuit board layouts?

A: The BD140 SOT-32-3 package and BD180G TO-126-3 package are both through-hole configurations with equivalent pin spacing and mechanical compatibility. PCB layout verification is required to confirm footprint alignment, as package body dimensions differ between SOT-32-3 and TO-126-3 formats.

Q: Why does the BD14016S show Last Time Buy status?

A: Last Time Buy status indicates that onsemi has announced end-of-life for this device. Existing inventory is available for purchase, but future production is not planned. Applications requiring long-term component availability should transition to the BD140 or other Active-status alternatives.

Q: Are all three devices RoHS3 compliant?

A: Yes. The BD180G, BD14016S, and BD140 all carry ROHS3 Compliant certification and REACH Unaffected status, ensuring regulatory compatibility across all three devices.

Q: What is the significance of the reduced power rating in the BD14016S and BD140?

A: The BD180G supports 30 W maximum power dissipation, while both substitute parts are rated for 1.25 W. Applications requiring continuous power dissipation above 1.25 W must retain the BD180G or select alternative devices with higher power ratings. Thermal management and circuit duty cycle must be evaluated to determine if the reduced power rating is acceptable.

Q: Can the BD140 be used in high-frequency switching applications?

A: The BD140 does not specify a transition frequency parameter in the provided data. The BD180G specifies 3 MHz transition frequency. Applications requiring specific frequency response characteristics should confirm BD140 frequency specifications through the manufacturer datasheet before substitution.

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