BD180 Equivalent & Substitute Parts

Part Overview

The BD180 is a Bipolar (BJT) Transistor with PNP configuration manufactured by onsemi. It is rated for 80 V collector-emitter breakdown voltage and 3 A maximum collector current, with a maximum power dissipation of 30 W. The device is housed in a TO-126 through-hole package and operates across a temperature range of -65°C to 150°C.

The BD180 is classified as an obsolete product. Locating equivalent or substitute components is necessary for applications requiring active production support, compliance with current regulatory standards, or procurement of devices with extended availability.

Substiute Parts

BD180

onsemiIn Stock: 3337BD180 Datasheet

Current PartRFQ

BD180G

onsemiIn Stock: 2390BD180G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD180 is determined by the following critical electrical and mechanical parameters:

• Transistor Type: PNP configuration must be maintained
• Voltage Rating: Collector-emitter breakdown voltage must be 80 V or greater
• Current Rating: Maximum collector current must support the application requirement
• Power Dissipation: Maximum power rating must be 80 V or greater
• Package: TO-126 through-hole package compatibility
• Operating Temperature Range: -65°C to 150°C minimum
• DC Current Gain: Minimum hFE of 40 @ 150mA, 2V
• Saturation Characteristics: Vce saturation of 800mV @ 100mA, 1A

The BD180G is identified as a direct substitute based on matching electrical specifications across voltage, temperature, gain, and saturation parameters. The primary distinction is the maximum collector current rating, which differs between the main part and substitute.

Parameter Comparison

Engineering Selection Recommendations

The BD180 is an obsolete product with RoHS non-compliance status. The BD180G is an active product that maintains electrical compatibility across all critical parameters while providing ROHS3 compliance.

Selection of BD180G is appropriate for applications where the maximum collector current requirement does not exceed 1 A. The BD180G provides equivalent voltage, power dissipation, frequency response, temperature range, and gain characteristics while offering the advantage of active product status and current regulatory compliance.

For applications requiring the full 3 A collector current capability of the original BD180, the substitute device is not suitable due to its 1 A maximum collector current rating.

Frequently Asked Questions (FAQ)

Q: Can BD180G directly replace BD180 in all applications?

A: BD180G is electrically compatible with BD180 across voltage, power, frequency, temperature, and gain specifications. However, the maximum collector current differs: BD180G is rated for 1 A while BD180 is rated for 3 A. Substitution is valid only for applications where collector current does not exceed 1 A.

Q: What is the primary advantage of BD180G over BD180?

A: BD180G is an active product with ROHS3 compliance, whereas BD180 is obsolete and RoHS non-compliant. BD180G provides access to current manufacturing and regulatory support.

Q: Are the packages identical between BD180 and BD180G?

A: Both devices use the TO-126-3 through-hole package. Physical mounting and PCB layout compatibility is maintained.

Q: What are the critical electrical parameters for substitution?

A: Substitution requires matching PNP transistor type, 80 V breakdown voltage, 30 W power rating, 3 MHz transition frequency, -65°C to 150°C operating temperature, 40 minimum hFE @ 150mA/2V, and 800mV saturation voltage @ 100mA/1A.

Q: How does the 1 A current rating of BD180G affect circuit design?

A: Applications designed for the BD180's 3 A capability cannot use BD180G without circuit modification. The substitute is suitable only for circuits where maximum collector current remains at or below 1 A during normal operation.