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BD17510STU Equivalent & Substitute Parts
Part Overview
The BD17510STU is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 3 A, collector-emitter breakdown voltage of 45 V, and maximum power dissipation of 30 W in a Through Hole TO-126-3 package. The BD17510STU is classified as Last Time Buy, indicating that new production has been discontinued. Identifying equivalent and substitute parts is necessary to ensure continued availability for new designs, maintenance applications, and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) (Max) | 3 | A |
| Voltage - Collector Emitter Breakdown (Max) | 45 | V |
| Power - Max | 30 | W |
| Frequency - Transition | 3 | MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V | — |
| Operating Temperature (TJ) | 150 | °C |
| Package / Case | TO-126-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the BD17510STU is evaluated based on the following critical parameters:
Electrical Compatibility Criteria:
- Transistor type must be NPN
- Collector-emitter breakdown voltage must be equal to or greater than 45 V
- Maximum collector current must be equal to or greater than 3 A
- DC current gain (hFE) must meet or exceed 63 @ 150mA, 2V
- Operating temperature rating must be 150°C or higher
Mechanical Compatibility Criteria:
- Package type must be TO-126-3
- Mounting type must be Through Hole
Regulatory Compliance:
- RoHS3 compliance required
- REACH Unaffected status required
The BD13510STU does not meet the electrical substitution criteria for the BD17510STU. While both devices share identical voltage ratings (45 V), package type (TO-126-3), and regulatory compliance, the BD13510STU has a maximum collector current of 1.5 A, which is insufficient for applications requiring the full 3 A capability of the BD17510STU. Additionally, the maximum power dissipation of the BD13510STU is 1.25 W compared to 30 W for the BD17510STU, representing a significant reduction in thermal handling capacity.
Parameter Comparison
| Parameter | BD17510STU | BD13510STU | Unit |
|---|---|---|---|
| Transistor Type | NPN | NPN | — |
| Current - Collector (Ic) (Max) | 3 | 1.5 | A |
| Voltage - Collector Emitter Breakdown (Max) | 45 | 45 | V |
| Power - Max | 30 | 1.25 | W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V | 63 @ 150mA, 2V | — |
| Operating Temperature (TJ) | 150 | 150 | °C |
| Package / Case | TO-126-3 | TO-126-3 | — |
| Mounting Type | Through Hole | Through Hole | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
The BD17510STU is classified as Last Time Buy, requiring alternative sourcing strategies for ongoing applications. However, the BD13510STU is not a direct substitute due to reduced current and power ratings.
For applications requiring the full 3 A collector current and 30 W power dissipation of the BD17510STU: Direct replacement with the BD13510STU is not suitable. Alternative sourcing must identify NPN transistors with specifications meeting or exceeding: 3 A maximum collector current, 45 V collector-emitter breakdown voltage, 30 W maximum power dissipation, and TO-126-3 package compatibility.
For applications with reduced current requirements: If circuit redesign permits operation at 1.5 A or lower collector current levels, the BD13510STU provides electrical and mechanical compatibility within its reduced current envelope. Both devices maintain identical voltage ratings, DC current gain specifications, operating temperature ratings, and regulatory compliance status (ROHS3 Compliant, REACH Unaffected).
Inventory and Product Status Considerations: The BD17510STU has 2736 pieces in stock with Last Time Buy status. The BD13510STU has 1321 pieces in stock with Active product status, ensuring continued availability for future procurement.
Frequently Asked Questions (FAQ)
Q: Can the BD13510STU directly replace the BD17510STU in all applications?
A: No. The BD13510STU has a maximum collector current of 1.5 A and maximum power dissipation of 1.25 W, compared to 3 A and 30 W for the BD17510STU. Direct substitution is only possible in applications designed for 1.5 A or lower collector current operation.
Q: What are the key differences between these two transistors?
A: The primary differences are maximum collector current (3 A vs. 1.5 A) and maximum power dissipation (30 W vs. 1.25 W). Both devices share identical voltage ratings (45 V), DC current gain specifications (63 @ 150mA, 2V), operating temperature (150°C), and TO-126-3 package type.
Q: Are both devices RoHS and REACH compliant?
A: Yes. Both the BD17510STU and BD13510STU are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.
Q: What is the significance of the Last Time Buy status for the BD17510STU?
A: Last Time Buy status indicates that onsemi has discontinued new production of the BD17510STU. Existing inventory of 2736 pieces represents the final available stock. New designs should consider alternative parts with equivalent or superior specifications, or transition to the BD13510STU if application requirements permit reduced current ratings.
Q: Can the BD17510STU be used in place of the BD13510STU?
A: Yes. The BD17510STU can be used in applications designed for the BD13510STU, as it provides superior current handling (3 A vs. 1.5 A) and power dissipation (30 W vs. 1.25 W) capabilities. However, this represents over-specification and may not be cost-effective for applications with lower current requirements.
Q: Are there any frequency or switching speed differences between these devices?
A: The BD17510STU specifies a transition frequency of 3 MHz. The BD13510STU does not provide a transition frequency specification in the available data. For applications with specific frequency requirements, the BD17510STU's 3 MHz specification should be verified against circuit design parameters.
Q: What mounting considerations apply to both devices?
A: Both devices use Through Hole mounting in the TO-126-3 package, ensuring identical PCB layout and assembly compatibility. No modifications to board design or assembly processes are required when transitioning between these two devices, provided electrical requirements are met.
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