BD138-6-BP Equivalent & Substitute Parts

Part Overview

The BD138-6-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 60 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a TO-126 through-hole package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity.

Substiute Parts

BD138-6-BP

Micro Commercial CoIn Stock: 830BD138-6-BP Datasheet

Current PartRFQ

BD138G

onsemiIn Stock: 3681BD138G Datasheet

DirectRFQ

BD136G

onsemiIn Stock: 16633BD136G Datasheet

SimilarRFQ

BD13810STU

Fairchild SemiconductorIn Stock: 22836BD13810STU Datasheet

SimilarRFQ

BD13816STU

onsemiIn Stock: 1279BD13816STU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD138-6-BP is determined by the following critical parameters: transistor type (PNP), maximum collector-emitter breakdown voltage (60 V minimum), maximum collector current (1.5 A), saturation voltage characteristics, collector cutoff current, DC current gain specifications, operating temperature range, and through-hole mounting compatibility.

Substitute parts are grouped into two categories:

Direct Equivalents: Parts that maintain all electrical specifications and package compatibility with the BD138-6-BP, differing only in manufacturer or product status.

Similar Substitutes: Parts that maintain core electrical specifications (PNP type, 60 V breakdown, 1.5 A collector current) but may have reduced maximum power dissipation or modified DC current gain characteristics. These parts are suitable for applications where the full 12.5 W power rating is not required.

Voltage-Reduced Alternatives: Parts that operate at lower maximum collector-emitter breakdown voltages (45 V) but maintain all other electrical specifications. These are applicable only in circuits where the reduced voltage rating is acceptable.

Parameter Comparison

Engineering Selection Recommendations

BD138G (onsemi): This part is the primary direct equivalent for the BD138-6-BP. It maintains identical electrical specifications for transistor type, breakdown voltage, collector current, saturation voltage, and DC current gain. The BD138G is manufactured by onsemi, carries active product status, and is ROHS3 compliant. The reduced maximum power rating (1.25 W versus 12.5 W) is acceptable for applications not requiring the full power dissipation capability of the original part. This substitute is recommended for new designs and production continuity.

BD13810STU (Fairchild Semiconductor): This part provides electrical equivalence with 60 V breakdown voltage and 1.5 A collector current. It features an enhanced DC current gain (63 @ 150mA, 2V) compared to the BD138-6-BP specification (40 @ 150mA, 2V). The part is active and available in high inventory. The operating temperature specification differs, listing only 150°C maximum junction temperature without a minimum specification. This part is suitable for applications where the enhanced current gain is beneficial or neutral.

BD13816STU (onsemi): This part maintains full electrical equivalence with 60 V breakdown voltage, 1.5 A collector current, and identical saturation voltage characteristics. It features a significantly higher DC current gain (100 @ 150mA, 2V). The part carries a Last Time Buy status, indicating limited future availability. The operating temperature specification lists only 150°C maximum junction temperature. This substitute is suitable for immediate requirements but not recommended for long-term production planning due to product status.

BD136G (onsemi): This part is a voltage-reduced alternative with a 45 V maximum collector-emitter breakdown voltage compared to the 60 V specification of the BD138-6-BP. All other electrical parameters remain equivalent. This substitute is applicable only in circuits where the reduced voltage rating is acceptable and does not violate system design requirements. The part is active and widely available.

Frequently Asked Questions (FAQ)

Q: Can BD138G be used as a direct replacement for BD138-6-BP?

A: Yes. The BD138G maintains identical electrical specifications for all critical parameters: PNP transistor type, 60 V breakdown voltage, 1.5 A maximum collector current, 500mV saturation voltage, 100nA collector cutoff current, and 40 minimum DC current gain. Both parts use TO-126 through-hole packaging. The primary difference is the reduced maximum power dissipation (1.25 W versus 12.5 W), which is acceptable for applications not requiring the full power rating.

Q: What is the difference between BD138G and BD13816STU?

A: Both parts maintain 60 V breakdown voltage and 1.5 A collector current specifications. The primary differences are: (1) DC current gain is higher in BD13816STU (100 @ 150mA, 2V) compared to BD138G (40 @ 150mA, 2V); (2) BD13816STU carries Last Time Buy status while BD138G is active; (3) BD13816STU is supplied in tube packaging while BD138G is supplied in bulk. For new designs requiring long-term availability, BD138G is preferred.

Q: Can BD136G replace BD138-6-BP in all applications?

A: BD136G can replace BD138-6-BP only in applications where the maximum collector-emitter breakdown voltage of 45 V is acceptable. The 15 V reduction in breakdown voltage rating may be insufficient for circuits designed for 60 V operation. All other electrical specifications are equivalent. Verify circuit voltage requirements before substitution.

Q: Are all substitute parts ROHS3 compliant?

A: BD138G, BD136G, and BD13816STU are confirmed ROHS3 compliant. BD13810STU does not specify RoHS status in the provided data. Verify compliance requirements for your specific application before selection.

Q: What is the significance of the Last Time Buy status for BD13816STU?

A: Last Time Buy status indicates that onsemi has announced the end of production for this part. Existing inventory will be available for a limited period, after which the part will no longer be manufactured or supplied. For applications requiring long-term component availability, BD138G or BD13810STU are preferred alternatives.

Q: Do all substitute parts use the same TO-126 package?

A: Yes. All substitute parts (BD138G, BD136G, BD13810STU, and BD13816STU) use TO-225AA and TO-126-3 package designations, maintaining mechanical and thermal compatibility with the BD138-6-BP in through-hole mounting applications.

Q: How do the DC current gain specifications affect substitution?

A: The BD138-6-BP specifies a minimum DC current gain of 40 @ 150mA, 2V. BD138G matches this specification exactly. BD13810STU provides 63 minimum gain, and BD13816STU provides 100 minimum gain. Higher current gain values do not prevent substitution; they indicate improved transistor performance. Verify that circuit designs do not depend on specific current gain values before substitution.