BD1376S Equivalent & Substitute Parts

Part Overview

The BD1376S is an NPN bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a TO-126-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with modified performance characteristics suitable for specific application requirements.

Substiute Parts

BD1376S

onsemiIn Stock: 2717BD1376S Datasheet

Current PartRFQ

BD137G

onsemiIn Stock: 3435BD137G Datasheet

DirectRFQ

KSD1691YSTU

onsemiIn Stock: 35955KSD1691YSTU Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the BD1376S is determined by alignment of the following critical parameters: transistor type (NPN), collector-emitter breakdown voltage (60 V), maximum collector current rating, power dissipation capability, saturation voltage characteristics, DC current gain, and through-hole mounting configuration.

Direct Equivalent Classification: BD137G maintains identical electrical specifications (60 V, 1.5 A, 1.25 W, 500mV saturation) and mechanical compatibility (TO-126-3 package, through-hole mounting). This part is classified as a direct equivalent with active product status and enhanced compliance certifications.

Functional Substitute Classification: KSD1691YSTU provides higher current capability (5 A maximum collector current) and improved DC current gain (160 @ 2A, 1V) while maintaining the 60 V breakdown voltage rating and TO-126-3 package form factor. This part is suitable for applications requiring increased current handling capacity within the same voltage class and package envelope.

Parameter Comparison

Engineering Selection Recommendations

BD137G Selection: This part is the primary replacement for BD1376S applications. BD137G is manufactured by onsemi with active product status, ensuring long-term availability and supply chain stability. The part maintains identical electrical performance across all critical parameters and is certified ROHS3 compliant, meeting modern environmental and regulatory requirements. Operating temperature range extends to -55°C, providing enhanced thermal flexibility compared to the main part specification. This part is suitable for direct substitution in existing designs without circuit modification.

KSD1691YSTU Selection: This part is appropriate for applications where the original design operates below the 1.5 A collector current limit and where increased current capacity provides design margin or future scalability. The KSD1691YSTU maintains 60 V breakdown voltage compatibility and TO-126-3 package form factor. The improved DC current gain (160 versus 40) and lower saturation voltage (300mV versus 500mV) result in reduced power dissipation and improved switching characteristics. This part is ROHS3 compliant and carries active product status. Selection of this part requires circuit analysis to confirm that the modified electrical characteristics do not adversely affect circuit performance.

Frequently Asked Questions (FAQ)

Q: Can BD137G be used as a direct replacement for BD1376S without circuit modification?

A: Yes. BD137G maintains identical electrical specifications for collector-emitter breakdown voltage (60 V), maximum collector current (1.5 A), power dissipation (1.25 W), saturation voltage (500mV @ 50mA, 500mA), and DC current gain (40 @ 150mA, 2V). The TO-126-3 package and through-hole mounting are identical. No circuit modification is required.

Q: What are the advantages of using KSD1691YSTU over BD137G?

A: KSD1691YSTU provides higher maximum collector current (5 A versus 1.5 A), improved DC current gain (160 @ 2A, 1V versus 40 @ 150mA, 2V), and lower saturation voltage (300mV @ 200mA, 2A versus 500mV @ 50mA, 500mA). These characteristics result in reduced power dissipation and improved switching performance in applications operating at higher current levels.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts (BD1376S, BD137G, KSD1691YSTU) utilize the TO-126-3 through-hole package with identical mechanical dimensions and pin configuration. No package-related modifications to PCB layout or mechanical assembly are required.

Q: What compliance certifications apply to substitute parts?

A: BD137G and KSD1691YSTU are both ROHS3 compliant and carry REACH Unaffected status. Both parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. These certifications ensure compliance with current environmental and export regulations.

Q: Can KSD1691YSTU be used in applications designed for BD1376S if the circuit operates below 1.5 A?

A: KSD1691YSTU can be used in such applications. However, the modified electrical characteristics (higher current gain, lower saturation voltage, higher collector cutoff current) must be evaluated to confirm circuit performance remains within design specifications. The higher DC current gain may affect biasing networks designed for the lower gain of BD1376S.

Q: What is the inventory status of substitute parts?

A: BD137G has 3400 pieces in stock. KSD1691YSTU has 35885 pieces in stock. Both parts are available for immediate procurement.