BD137-16-BP Equivalent & Substitute Parts

Part Overview

The BD137-16-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 60 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a TO-126 through-hole package. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing production and maintenance applications. The BD137-16-BP delivers 1.25 W maximum power dissipation with a minimum DC current gain of 100 at 150 mA collector current and 2 V collector-emitter voltage.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	1.5	A
Power - Max	1.25	W
Vce Saturation (Max) @ Ib, Ic	500 mV @ 50 mA, 500 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature Range	−55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BD137-16-BP is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must equal or exceed 60 V
Maximum collector current must equal or exceed 1.5 A
Maximum power dissipation must equal or exceed 1.25 W
Vce saturation characteristics must match at specified bias conditions
DC current gain must support the intended application bias point

Mechanical Compatibility Criteria:

Package type must be TO-126-3 (through-hole)
Mounting configuration must be through-hole
Pin configuration must be compatible with existing PCB layouts

Compliance Criteria:

RoHS3 compliance required
ECCN and HTSUS classifications must align

The substitute parts BD135G and BD135TG are lower-voltage variants (45 V maximum) of the BD137-16-BP. These devices are electrically compatible for applications where the 60 V rating is not required, as they maintain identical collector current, power dissipation, saturation voltage, and cutoff current specifications. Both substitutes share the same TO-126-3 package and through-hole mounting configuration.

Parameter Comparison

Parameter	BD137-16-BP	BD135G	BD135TG	Unit
Manufacturer	Micro Commercial Co	onsemi	onsemi	—
Transistor Type	NPN	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	45	45	V
Current - Collector (Ic) (Max)	1.5	1.5	1.5	A
Power - Max	1.25	1.25	1.25	W
Vce Saturation (Max) @ Ib, Ic	500 mV @ 50 mA, 500 mA	500 mV @ 50 mA, 500 mA	500 mV @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	100	100	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	40 @ 150 mA, 2 V	40 @ 150 mA, 2 V	—
Operating Temperature Range	−55 to 150	−55 to 150	−55 to 150	°C
Mounting Type	Through Hole	Through Hole	Through Hole	—
Package / Case	TO-126-3	TO-126-3	TO-126-3	—
Product Status	Obsolete	Active	Last Time Buy	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

BD135G (onsemi): This substitute is suitable for applications where the 60 V collector-emitter breakdown voltage of the BD137-16-BP is not required. The BD135G maintains electrical equivalence in collector current, power dissipation, and saturation characteristics. The device is in active production status, ensuring long-term availability. The lower DC current gain (40 vs. 100) must be evaluated against circuit bias requirements. Bulk packaging is available.

BD135TG (onsemi): This substitute provides identical electrical specifications to BD135G with the same 45 V collector-emitter breakdown rating. The BD135TG is classified as Last Time Buy, indicating limited future availability. Tube packaging is supplied. Selection of this device should account for its end-of-life status.

For applications requiring the full 60 V collector-emitter breakdown voltage rating of the BD137-16-BP, neither substitute is electrically equivalent. In such cases, alternative high-voltage NPN transistors in TO-126 packaging must be evaluated.

Frequently Asked Questions (FAQ)

Q: Can BD135G or BD135TG be used as direct replacements for BD137-16-BP in all applications?

A: No. The BD135G and BD135TG are rated for 45 V maximum collector-emitter breakdown voltage, compared to 60 V for the BD137-16-BP. These substitutes are electrically compatible only in applications where the circuit operates below 45 V. If the circuit design requires the full 60 V rating, these devices are not suitable.

Q: What is the difference between BD135G and BD135TG?

A: Both devices are electrically identical with 45 V collector-emitter breakdown voltage, 1.5 A maximum collector current, and 1.25 W power dissipation. The primary difference is packaging: BD135G is supplied in bulk, while BD135TG is supplied in tubes. BD135TG is classified as Last Time Buy, indicating limited future availability.

Q: How does the DC current gain difference affect substitution?

A: The BD137-16-BP has a minimum DC current gain of 100 at 150 mA and 2 V, while BD135G and BD135TG have a minimum of 40 at the same conditions. This 2.5× difference in current gain affects base drive requirements and circuit biasing. Applications with fixed base current bias may require circuit adjustment when substituting these devices.

Q: Are the packages physically identical?

A: Yes. All three devices use the TO-126-3 through-hole package with identical pin configuration and mechanical dimensions. PCB layout compatibility is maintained across all three parts.

Q: What compliance certifications apply to these substitutes?

A: All three devices are ROHS3 compliant. BD135G and BD135TG carry REACH Unaffected status. All devices share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Should BD135TG be selected given its Last Time Buy status?

A: BD135TG selection should be limited to applications where tube packaging is specifically required. For new designs or long-term production, BD135G (active status) is the preferred substitute when voltage rating compatibility is confirmed.

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