BD136-10-BP Equivalent & Substitute Parts

Part Overview

The BD136-10-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 45 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a TO-126 through-hole package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical specifications, while substitute parts offer compatible performance within defined parameter tolerances for applications requiring this transistor type.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	45	V
Current - Collector (Ic) (Max)	1.5	A
Power - Max	1.25	W
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	—
Current - Collector Cutoff (Max)	100nA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	—
Operating Temperature	-55°C ~ 150°C	TJ
Mounting Type	Through Hole	—
Package / Case	TO-225AA, TO-126-3	—

Substitute Part Grouping Explanation

Substitute parts for the BD136-10-BP are categorized based on electrical parameter compatibility and product status. The substitution logic follows these criteria:

Direct Equivalents (45 V Rating): Parts maintaining the 45 V collector-emitter breakdown voltage specification with identical 1.5 A collector current rating and 1.25 W power dissipation. These parts are pin-compatible and functionally interchangeable within the original design envelope.

Higher Voltage Variants (60 V Rating): Parts rated for 60 V collector-emitter breakdown voltage with the same 1.5 A collector current and 1.25 W power rating. These parts are electrically compatible for applications where the original 45 V specification provides design margin, as the higher voltage rating does not degrade performance in 45 V circuits.

Key Parameters Determining Substitution:

Transistor Type: PNP (mandatory match)
Collector Current (Ic) (Max): 1.5 A (mandatory match)
Power Dissipation (Max): 1.25 W (mandatory match)
Vce Saturation: 500mV @ 50mA, 500mA (mandatory match)
Collector Cutoff Current: 100nA (mandatory match)
Mounting Type: Through Hole (mandatory match)
Package: TO-126 or TO-126-3 (mandatory match)
Voltage - Collector Emitter Breakdown: 45 V minimum (45 V or higher acceptable)

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max)	Vce Breakdown (Max)	Power (Max)	hFE (Min) @ 150mA, 2V	Operating Temp	Package
BD136-10-BP	Micro Commercial Co	Obsolete	1.5 A	45 V	1.25 W	63	-55°C ~ 150°C	TO-126
BD13610STU	Fairchild Semiconductor	Active	1.5 A	45 V	1.25 W	63	-55°C ~ 150°C	TO-126-3
BD13610S	Fairchild Semiconductor	Active	1.5 A	45 V	1.25 W	63	-55°C ~ 150°C	TO-126-3
BD136G	onsemi	Active	1.5 A	45 V	1.25 W	40	-55°C ~ 150°C	TO-126
BD13810STU	Fairchild Semiconductor	Active	1.5 A	60 V	1.25 W	63	-55°C ~ 150°C	TO-126-3
BD13816STU	onsemi	Last Time Buy	1.5 A	60 V	1.25 W	100	-55°C ~ 150°C	TO-126-3

Engineering Selection Recommendations

Primary Substitutes (Direct 45 V Equivalents):

BD13610STU and BD13610S from Fairchild Semiconductor are direct functional equivalents to the BD136-10-BP. Both parts maintain active product status, identical electrical specifications including 45 V breakdown voltage and 63 minimum hFE, and are ROHS3 compliant. BD13610STU is supplied in bulk packaging, while BD13610S is also available in bulk. Both use TO-126-3 package configuration, which is mechanically and electrically compatible with the original TO-126 specification.

BD136G from onsemi is an active equivalent rated for 45 V with identical power and current specifications. This part maintains the original TO-126 package designation and offers ROHS3 compliance with extended temperature range support (-55°C ~ 150°C). The DC current gain minimum of 40 at 150mA, 2V is lower than the original specification of 63, but remains within acceptable substitution parameters for most applications.

Secondary Substitutes (Higher Voltage 60 V Variants):

BD13810STU from Fairchild Semiconductor and BD13816STU from onsemi are rated for 60 V collector-emitter breakdown voltage. These parts maintain 1.5 A collector current and 1.25 W power dissipation. BD13810STU is active with 63 minimum hFE. BD13816STU carries Last Time Buy status with 100 minimum hFE. Both parts are ROHS3 compliant and suitable for applications where the higher voltage rating provides additional design margin without performance degradation in 45 V circuits.

Compliance and Certification:

All recommended substitutes are ROHS3 compliant and carry EAR99 export classification. Fairchild Semiconductor parts include REACH Unaffected status where specified. onsemi parts include REACH Unaffected designation. Moisture sensitivity level is 1 (Unlimited) for the original part; substitute parts show Not Applicable or equivalent ratings.

Frequently Asked Questions (FAQ)

Q: Can BD13610STU replace BD136-10-BP directly in my circuit?

A: Yes. BD13610STU is a direct functional equivalent with identical electrical specifications: 45 V breakdown voltage, 1.5 A collector current, 1.25 W power dissipation, and 63 minimum DC current gain. The TO-126-3 package is mechanically and electrically compatible with the original TO-126 package. Both parts are through-hole mounted with identical pin configurations.

Q: What is the difference between BD13610STU and BD13610S?

A: Both parts are manufactured by Fairchild Semiconductor with identical electrical specifications and active product status. The primary difference is packaging designation: BD13610STU is specified as bulk packaging, while BD13610S is also bulk. Both use TO-126-3 package configuration and are functionally equivalent for circuit applications.

Q: Why would I select BD136G over BD13610STU?

A: BD136G from onsemi maintains the original TO-126 package designation and is manufactured by a different supplier, offering procurement flexibility. Both parts are active and ROHS3 compliant. BD136G has a lower minimum DC current gain (40 vs. 63), which may be acceptable depending on circuit design margins. Selection depends on availability, lead time, and supplier preference.

Q: Can I use BD13810STU (60 V) in place of BD136-10-BP (45 V)?

A: Yes. BD13810STU is rated for 60 V collector-emitter breakdown voltage, which is higher than the original 45 V specification. The higher voltage rating does not degrade performance in circuits designed for 45 V operation. All other electrical parameters—1.5 A collector current, 1.25 W power dissipation, and 63 minimum DC current gain—are identical. This part is suitable for applications requiring additional voltage margin.

Q: What is the significance of "Last Time Buy" status for BD13816STU?

A: Last Time Buy status indicates that onsemi will discontinue this part after a final production run. BD13816STU is a 60 V variant with 100 minimum DC current gain and is currently available in inventory. This part is suitable for immediate procurement but should not be selected for new long-term designs without confirming availability and lead times with the supplier.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification. The original BD136-10-BP is also ROHS3 compliant. This ensures compatibility with environmental and regulatory requirements across all substitution options.

Q: What is the difference between TO-126 and TO-126-3 packages?

A: Both TO-126 and TO-126-3 designations refer to the same three-lead through-hole package configuration used for power transistors. The packages are mechanically and electrically identical, with pin assignments and mounting footprints compatible for direct substitution. The designation variation reflects different manufacturer or specification documentation conventions.

Q: Can I use BD13816STU with its higher hFE (100) in my circuit designed for hFE of 63?

A: Yes. BD13816STU has a minimum DC current gain of 100 at 150mA, 2V, compared to the original specification of 63. A higher DC current gain does not degrade circuit performance; it typically improves switching speed and reduces base drive requirements. This part is suitable for applications originally designed for the lower hFE specification.

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