BD135TG Equivalent & Substitute Parts

Part Overview

The BD135TG is an NPN bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a TO-126 through-hole package. This device is classified as Last Time Buy, indicating discontinued production with limited remaining inventory. Equivalent and substitute parts are necessary to ensure design continuity and long-term component availability for applications requiring NPN transistor functionality within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45 V
Current - Collector (Ic) (Max)	1.5 A
Power - Max	1.25 W
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BD135TG is determined by electrical parameter compatibility and physical package compatibility. The primary substitution criteria are:

Electrical Parameters:

Transistor type must be NPN
Voltage - Collector Emitter Breakdown must be equal to or greater than 45 V
Current - Collector (Ic) (Max) must be equal to or greater than 1.5 A
Power dissipation must be equal to or greater than 1.25 W
DC Current Gain (hFE) must meet or exceed 40 @ 150mA, 2V
Operating temperature range must encompass -55°C ~ 150°C

Mechanical Parameters:

Mounting type must be Through Hole
Package must be compatible with TO-126-3 footprint

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications) and functional substitutes (enhanced electrical specifications within the same package family).

Parameter Comparison

Parameter	BD135TG (onsemi)	BD135G (onsemi)	MJE182G (onsemi)	BD135 (STMicroelectronics)	BD135-16 (STMicroelectronics)
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	80 V	45 V	45 V
Current - Collector (Ic) (Max)	1.5 A	1.5 A	3 A	1.5 A	1.5 A
Power - Max	1.25 W	1.25 W	1.5 W	1.25 W	1.25 W
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	1.7V @ 600mA, 3A	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V	40 @ 150mA, 2V	50 @ 100mA, 1V	40 @ 150mA, 2V	40 @ 150mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Last Time Buy	Active	Active	Active	Not For New Designs

Engineering Selection Recommendations

BD135G (onsemi) is the primary direct equivalent substitute for BD135TG. Both parts share identical electrical specifications and are manufactured by onsemi. BD135G maintains Active product status with higher inventory availability (2369 pcs) compared to BD135TG (1451 pcs). The packaging differs only in format (Bulk versus Tube), which does not affect electrical or mechanical compatibility. This part is suitable for all applications currently using BD135TG.

MJE182G (onsemi) is a functional substitute offering enhanced electrical performance. It provides higher voltage rating (80 V versus 45 V), increased collector current (3 A versus 1.5 A), and greater power dissipation (1.5 W versus 1.25 W). MJE182G is suitable for applications where the BD135TG specifications are met but additional design margin is required. This part maintains Active product status with substantial inventory (65400 pcs). The TO-126 package is mechanically compatible with BD135TG footprints.

BD135 (STMicroelectronics) is a direct equivalent manufactured by STMicroelectronics. Electrical specifications are identical to BD135TG. This part maintains Active product status with high inventory availability (26500 pcs). The supplier device package is SOT-32-3, which is mechanically compatible with TO-126-3 footprints. This part is suitable for applications requiring STMicroelectronics sourcing or dual-source strategies.

BD135-16 (STMicroelectronics) is a direct equivalent with identical electrical specifications. However, this part is classified as Not For New Designs, indicating obsolescence trajectory. While electrically compatible, this part should not be selected for new designs. Existing designs using BD135-16 may transition to BD135G or BD135 for long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can BD135G be used as a direct replacement for BD135TG?

A: Yes. BD135G is a direct equivalent with identical electrical specifications (45 V, 1.5 A, 1.25 W) and compatible TO-126 package. The only difference is packaging format (Bulk versus Tube). BD135G maintains Active product status with higher inventory availability.

Q: What is the difference between BD135TG and MJE182G?

A: MJE182G provides enhanced electrical performance with higher voltage rating (80 V versus 45 V), increased collector current (3 A versus 1.5 A), and greater power dissipation (1.5 W versus 1.25 W). Both use the same TO-126 package. MJE182G is suitable when additional design margin is required but is not necessary for applications within BD135TG specifications.

Q: Are STMicroelectronics BD135 and onsemi BD135G interchangeable?

A: Yes. Both parts have identical electrical specifications (45 V, 1.5 A, 1.25 W) and compatible TO-126-3 packages. The manufacturer difference allows for dual-source strategies. Both maintain Active product status.

Q: Should BD135-16 be used in new designs?

A: No. BD135-16 is classified as Not For New Designs. While electrically compatible with BD135TG, this part should not be selected for new applications. Existing designs using BD135-16 should transition to BD135G or BD135 for supply continuity.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) NPN transistor type, (2) Voltage - Collector Emitter Breakdown equal to or greater than 45 V, (3) Current - Collector (Ic) (Max) equal to or greater than 1.5 A, (4) Power dissipation equal to or greater than 1.25 W, (5) DC Current Gain (hFE) meeting or exceeding 40 @ 150mA, 2V, (6) Operating temperature range encompassing -55°C ~ 150°C, and (7) Through Hole mounting in TO-126-3 compatible package.

Q: Is the operating temperature range a critical substitution parameter?

A: Yes. BD135 and BD135-16 (STMicroelectronics) specify maximum operating temperature of 150°C without lower temperature specification, whereas BD135TG and BD135G specify -55°C ~ 150°C. For applications requiring full -55°C operation, BD135G or MJE182G are required. For applications limited to 0°C or higher minimum temperature, STMicroelectronics parts are acceptable.

Q: Can BD135TG be used in high-voltage applications?

A: BD135TG is rated for 45 V maximum collector-emitter breakdown voltage. Applications requiring higher voltage margins should use MJE182G (80 V rating). Exceeding the 45 V rating will result in device failure.

Q: What is the inventory status of each substitute part?

A: BD135TG (Last Time Buy): 1451 pcs; BD135G (Active): 2369 pcs; MJE182G (Active): 65400 pcs; BD135 (Active): 26500 pcs; BD135-16 (Not For New Designs): 9916 pcs. For long-term supply assurance, BD135G or MJE182G are recommended.

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