BCX70H_D87Z Equivalent & Substitute Parts

Part Overview

The BCX70H_D87Z is an NPN bipolar junction transistor manufactured by onsemi, housed in a SOT-23-3 surface mount package. This device is rated for 45 V collector-emitter breakdown voltage with a maximum collector current of 200 mA and 350 mW power dissipation. The BCX70H_D87Z is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Key Parameters

Parameter	BCX70H_D87Z	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	45	V
Current - Collector (Ic) (Max)	200	mA
Power - Max	350	mW
Frequency - Transition	125	MHz
Vce Saturation (Max) @ Ib, Ic	550mV @ 1.25mA, 50mA	V
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 2mA, 5V	—
Current - Collector Cutoff (Max)	20	nA
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the BCX70H_D87Z are selected based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Mandatory Matching Parameters:

Transistor Type: NPN
Package / Case: SOT-23-3 (TO-236-3, SC-59)
Mounting Type: Surface Mount
Voltage - Collector Emitter Breakdown (Max): ≥ 45 V
Current - Collector (Ic) (Max): ≥ 200 mA
Power - Max: ≥ 350 mW

Secondary Compatibility Factors:

DC Current Gain (hFE) characteristics
Vce Saturation performance
Frequency - Transition capability
Product Status: Active (preferred for ongoing availability)

Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents (Matched Ic and Voltage): Parts with 200 mA collector current and 45 V breakdown voltage, offering enhanced frequency response or improved saturation characteristics.

Category B - Higher Current Capability (Uprated Ic): Parts with 500 mA or 600 mA collector current ratings, suitable for applications requiring additional current margin while maintaining 45 V or higher voltage ratings.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power mW	fT MHz	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Product Status
BCX70H_D87Z	onsemi	200	45	350	125	550mV @ 1.25mA, 50mA	180 @ 2mA, 5V	Obsolete
MMBT6429LT1G	onsemi	200	45	225	700	600mV @ 5mA, 100mA	500 @ 100µA, 5V	Active
NSVMMBT6429LT1G	onsemi	200	45	300	700	600mV @ 5mA, 100mA	500 @ 100µA, 5V	Active
MMBT6428LT1G	onsemi	200	50	225	700	600mV @ 5mA, 100mA	250 @ 100µA, 5V	Active
2PD601BSL,215	NXP Semiconductors	200	50	250	250	250mV @ 10mA, 100mA	290 @ 2mA, 10V	Active
BC817-16LT1G	onsemi	500	45	300	100	700mV @ 50mA, 500mA	100 @ 100mA, 1V	Active
BCX19LT1G	onsemi	500	45	300	—	620mV @ 50mA, 500mA	100 @ 100mA, 1V	Active
BC847CLT1G	onsemi	100	45	300	100	600mV @ 5mA, 100mA	420 @ 2mA, 5V	Active
BC847CLT3G	onsemi	100	45	300	100	600mV @ 5mA, 100mA	420 @ 2mA, 5V	Active
MMBT2222ALT1G	onsemi	600	40	225	300	1V @ 50mA, 500mA	100 @ 150mA, 10V	Active
MMBT2222ALT3G	onsemi	600	40	300	300	1V @ 50mA, 500mA	100 @ 150mA, 10V	Active

Engineering Selection Recommendations

Primary Substitutes (Direct Electrical Equivalents):

MMBT6429LT1G and NSVMMBT6429LT1G are the closest electrical equivalents to the BCX70H_D87Z. Both devices maintain the 200 mA collector current and 45 V breakdown voltage specifications. NSVMMBT6429LT1G offers 300 mW power rating compared to MMBT6429LT1G at 225 mW, providing additional thermal margin. Both parts are active products with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). The transition frequency of 700 MHz exceeds the original 125 MHz specification, enabling superior high-frequency performance.

MMBT6428LT1G provides equivalent current and power handling with a 50 V breakdown voltage rating, offering additional voltage margin. This part is suitable for applications requiring enhanced voltage headroom while maintaining the 200 mA current specification.

2PD601BSL,215 (NXP Semiconductors) is an active automotive-qualified part (AEC-Q101) with 200 mA rating and 50 V breakdown voltage. This device features superior saturation characteristics (250 mV @ 10mA, 100mA) compared to the original part, making it suitable for switching applications requiring low saturation voltage. The 250 MHz transition frequency is lower than the original specification but adequate for most general-purpose applications.

Secondary Substitutes (Higher Current Capability):

BC817-16LT1G and BCX19LT1G provide 500 mA collector current capability with 45 V breakdown voltage, offering significant current margin for applications requiring higher drive capability. These parts are suitable for designs where increased current headroom is beneficial. BC817-16LT1G is active with ROHS3 compliance. BCX19LT1G is also active with ROHS3 compliance.

Limited Substitutes (Reduced Current Capability):

BC847CLT1G and BC847CLT3G are rated for 100 mA maximum collector current, below the original 200 mA specification. These parts are suitable only for applications where the actual operating current does not exceed 100 mA. Both devices are active with ROHS3 compliance and feature high DC current gain (420 @ 2mA, 5V).

Not Recommended:

MMBT2222ALT1G and MMBT2222ALT3G have a 40 V breakdown voltage rating, which is below the 45 V specification of the original part. These devices are not suitable for direct substitution in applications requiring the full 45 V rating. However, these parts are available for applications with reduced voltage requirements and offer higher current capability (600 mA) and enhanced frequency response (300 MHz).

Frequently Asked Questions (FAQ)

Q: Can MMBT6429LT1G directly replace BCX70H_D87Z in all applications?

A: MMBT6429LT1G is electrically compatible with BCX70H_D87Z for applications operating within 200 mA collector current and 45 V breakdown voltage limits. Both devices are housed in SOT-23-3 packages with identical pinouts. The primary difference is enhanced transition frequency (700 MHz vs. 125 MHz), which provides superior high-frequency performance. Verify that your circuit design does not depend on the specific saturation voltage or DC current gain characteristics of the original part.

Q: What is the difference between MMBT6429LT1G and NSVMMBT6429LT1G?

A: Both parts are electrically equivalent with identical electrical specifications. The primary difference is power dissipation rating: NSVMMBT6429LT1G is rated for 300 mW compared to 225 mW for MMBT6429LT1G. NSVMMBT6429LT1G provides additional thermal margin in applications with higher power dissipation requirements. Both parts are active products with ROHS3 compliance.

Q: Why would I choose BC817-16LT1G over MMBT6429LT1G?

A: BC817-16LT1G is rated for 500 mA collector current compared to 200 mA for MMBT6429LT1G. Select BC817-16LT1G when your application requires higher current capability or when design margin for current is critical. BC817-16LT1G operates at lower transition frequency (100 MHz), which may be advantageous in applications sensitive to high-frequency noise or oscillation.

Q: Is 2PD601BSL,215 suitable for my BCX70H_D87Z application?

A: 2PD601BSL,215 is suitable if your application operates within 200 mA collector current and does not require the full 45 V breakdown voltage (this part is rated 50 V, which exceeds the requirement). This NXP part offers automotive qualification (AEC-Q101) and superior saturation characteristics (250 mV @ 10mA, 100mA), making it ideal for switching applications. The 250 MHz transition frequency is lower than the original specification but adequate for general-purpose applications.

Q: Can I use BC847CLT1G as a substitute?

A: BC847CLT1G is rated for 100 mA maximum collector current, which is below the 200 mA specification of BCX70H_D87Z. Use BC847CLT1G only if your actual circuit operating current does not exceed 100 mA. This part offers high DC current gain (420 @ 2mA, 5V) and is suitable for low-current signal amplification applications.

Q: What does "Product Status: Active" mean for substitute parts?

A: Active product status indicates that the manufacturer continues to produce and support the component. Active parts have guaranteed availability and ongoing technical support. The BCX70H_D87Z is classified as obsolete, meaning onsemi no longer manufactures this device. Selecting active substitute parts ensures long-term availability for production and future design revisions.

Q: Are all substitute parts ROHS3 compliant?

A: All onsemi substitute parts listed (MMBT6429LT1G, NSVMMBT6429LT1G, MMBT6428LT1G, BC817-16LT1G, BCX19LT1G, BC847CLT1G, BC847CLT3G, MMBT2222ALT1G, MMBT2222ALT3G) are ROHS3 compliant. The NXP part 2PD601BSL,215 does not specify ROHS status in the provided data. Verify ROHS compliance requirements for your specific application and supply chain.

Q: What is the significance of the SOT-23-3 package for substitution?

A: SOT-23-3 is the physical package specification for all listed substitute parts, ensuring mechanical and thermal compatibility with the original BCX70H_D87Z. All parts use identical pinout (Base, Collector, Emitter) and footprint, enabling direct PCB-level substitution without layout modifications. Verify that your PCB design accommodates the specific supplier device package variant (some parts are supplied in Cut Tape, others in Tape & Reel).

Q: How do I determine which substitute part is best for my application?

A: Identify the critical electrical parameters for your circuit: (1) Maximum collector current required, (2) Minimum breakdown voltage required, (3) Saturation voltage requirements, (4) Frequency response requirements. Match these requirements to the substitute part specifications. For applications requiring 200 mA at 45 V with general-purpose performance, MMBT6429LT1G or NSVMMBT6429LT1G are recommended. For higher current applications, select BC817-16LT1G or BCX19LT1G. For low-current applications, BC847CLT1G is suitable.

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