BCX55-10-TP Equivalent & Substitute Parts

Part Overview

The BCX55-10-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-89 package. This device operates at a maximum collector current of 1 A and collector-emitter breakdown voltage of 60 V, with a maximum power dissipation of 500 mW and transition frequency of 130 MHz. The BCX55-10-TP is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Substiute Parts

BCX55-10-TP
Micro Commercial CoIn Stock: 661BCX55-10-TP Datasheet
BCX55-10-TP
Current Part
BCX56-16-TP
Micro Commercial CoIn Stock: 811BCX56-16-TP Datasheet
BCX56-16-TP
Similar
BCX55-16,135
Nexperia USA Inc.In Stock: 5510BCX55-16,135 Datasheet
BCX55-16,135
Similar
BCX55TA
Diodes IncorporatedIn Stock: 189125BCX55TA Datasheet
BCX55TA
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V
Power - Max 500 mW
Frequency - Transition 130 MHz
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BCX55-10-TP is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A (minimum requirement)
  • Voltage - Collector Emitter Breakdown (Max): 60 V or greater
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89 or SOT-89-3

Performance Parameters (Enhancement Allowed):

  • DC Current Gain (hFE): 63 minimum or higher
  • Power - Max: 500 mW or greater
  • Frequency - Transition: 130 MHz or higher
  • Operating Temperature: -55°C to 150°C or wider range

Substitute parts may exceed the original specifications in power dissipation, transition frequency, and DC current gain without compromising circuit functionality. Voltage ratings equal to or exceeding 60 V are acceptable. All substitute parts must maintain RoHS3 compliance and MSL Level 1 rating.

Parameter Comparison

Parameter BCX55-10-TP (Main) BCX56-16-TP BCX55-16,135 BCX55TA
Manufacturer Micro Commercial Co Micro Commercial Co Nexperia USA Inc. Diodes Incorporated
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 500 mW 500 mW 1.25 W 1 W
Frequency - Transition 130 MHz 130 MHz 180 MHz 150 MHz
Operating Temperature -55 to 150°C 150°C 150°C -65 to 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

BCX56-16-TP (Micro Commercial Co)

The BCX56-16-TP is an active product offering identical collector current and saturation characteristics to the BCX55-10-TP. This device provides a higher collector-emitter breakdown voltage of 80 V, enabling operation in circuits with elevated voltage requirements. The BCX56-16-TP maintains the same transition frequency of 130 MHz and power dissipation of 500 mW. DC current gain is enhanced to 100 at 150 mA, 2 V. This substitute is suitable for direct replacement in applications where the 60 V rating is not a limiting factor and higher voltage margin is beneficial. Active product status ensures continued availability and supply chain stability.

BCX55-16,135 (Nexperia USA Inc.)

The BCX55-16,135 maintains the 60 V collector-emitter breakdown voltage specification of the BCX55-10-TP while offering enhanced performance characteristics. This device provides increased power dissipation capability of 1.25 W and elevated transition frequency of 180 MHz. DC current gain is specified at 100 minimum at 150 mA, 2 V. The BCX55-16,135 is classified as an active product with REACH compliance documentation. This substitute is recommended for applications requiring improved thermal performance or higher frequency operation within the same voltage class. High inventory availability (5469 pcs) supports production requirements.

BCX55TA (Diodes Incorporated)

The BCX55TA is an active product maintaining the 60 V collector-emitter breakdown voltage and 1 A collector current specifications. This device offers enhanced power dissipation of 1 W and transition frequency of 150 MHz. The operating temperature range extends to -65°C, providing broader low-temperature capability compared to the BCX55-10-TP. DC current gain is specified at 40 minimum at 150 mA, 2 V, which is lower than the original part. The BCX55TA is supplied in SOT-89-3 package variant and is available in high volume (189100 pcs). This substitute is suitable for applications where extended low-temperature operation is required and lower DC current gain is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the BCX56-16-TP be used as a direct replacement for the BCX55-10-TP?

A: The BCX56-16-TP is electrically compatible with the BCX55-10-TP for most applications. Both devices share identical collector current (1 A), saturation voltage characteristics, and transition frequency (130 MHz). The BCX56-16-TP provides higher collector-emitter breakdown voltage (80 V versus 60 V), which does not compromise functionality in circuits designed for 60 V operation. Pin configuration and package footprint (SOT-89) are identical. Substitution is valid when the higher voltage rating does not introduce design complications.

Q: What is the difference between BCX55-16,135 and BCX55-10-TP?

A: The BCX55-16,135 and BCX55-10-TP share the same 60 V collector-emitter breakdown voltage and 1 A collector current rating. The BCX55-16,135 offers enhanced specifications: power dissipation of 1.25 W (versus 500 mW), transition frequency of 180 MHz (versus 130 MHz), and DC current gain of 100 minimum (versus 63 minimum). The BCX55-16,135 is an active product manufactured by Nexperia, whereas the BCX55-10-TP is obsolete. Both devices use the TO-243AA package and SOT-89 supplier package designation.

Q: Is the BCX55TA compatible with the BCX55-10-TP in terms of package and pinout?

A: The BCX55TA uses the SOT-89-3 package variant, which maintains the same physical footprint and pinout as the SOT-89 package of the BCX55-10-TP. Both devices are mounted as surface mount components in the TO-243AA case style. Mechanical compatibility is confirmed. Electrical compatibility is maintained for the 60 V voltage class and 1 A collector current specification. The BCX55TA is suitable for PCB designs originally specified for the BCX55-10-TP.

Q: Why does the BCX55TA have a lower DC current gain (40) compared to the BCX55-10-TP (63)?

A: DC current gain variation is a normal characteristic of transistor manufacturing and device selection. The BCX55TA is specified with a minimum DC current gain of 40 at 150 mA, 2 V, which is lower than the BCX55-10-TP specification of 63 minimum. This difference does not prevent substitution in most applications, as circuit designs typically accommodate gain variation through biasing networks or feedback mechanisms. Applications with strict gain requirements should be evaluated individually.

Q: What is the significance of the operating temperature range difference between BCX55-10-TP and BCX55TA?

A: The BCX55-10-TP operates from -55°C to 150°C, while the BCX55TA extends the lower temperature limit to -65°C. The BCX55TA provides 10°C additional low-temperature capability. This difference is significant only for applications requiring operation below -55°C. For standard industrial and commercial temperature ranges, both devices are functionally equivalent. The upper temperature limit of 150°C is identical for both parts.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The BCX55-10-TP and all three substitute parts (BCX56-16-TP, BCX55-16,135, and BCX55TA) are specified as ROHS3 compliant. All devices carry Moisture Sensitivity Level 1 (Unlimited) rating. These compliance certifications ensure suitability for applications subject to environmental and regulatory requirements.

Q: Which substitute part offers the best thermal performance?

A: The BCX55-16,135 provides the highest power dissipation rating of 1.25 W, compared to 500 mW for the BCX55-10-TP and BCX56-16-TP, and 1 W for the BCX55TA. Enhanced power dissipation capability allows operation at higher current levels or in thermally demanding applications. The BCX55-16,135 is the recommended choice when thermal performance is a design consideration.

Q: Can the BCX56-16-TP be used in circuits designed for 60 V maximum voltage?

A: Yes. The BCX56-16-TP is rated for 80 V collector-emitter breakdown voltage, which exceeds the 60 V requirement. Operating the device at 60 V is within its safe operating area. The higher voltage rating provides additional design margin and does not negatively impact circuit performance. The BCX56-16-TP is suitable for applications originally specified for 60 V operation.

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