BCW68HR Equivalent & Substitute Parts

Part Overview

The BCW68HR is an active PNP bipolar junction transistor manufactured by Nexperia USA Inc., rated for 45 V collector-emitter breakdown voltage and 800 mA maximum collector current. The device is packaged in TO-236AB (SOT-23-3) surface mount configuration and qualified to AEC-Q101 automotive standards. This transistor is suitable for general-purpose switching and amplification applications in automotive and industrial electronics.

Substitute parts are identified when design requirements permit operation within alternative electrical and mechanical parameters while maintaining functional compatibility in the target application circuit.

Key Parameters

Parameter	BCW68HR	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	45	V
Current - Collector (Ic) (Max)	800	mA
Power - Max	250	mW
Frequency - Transition	80	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 1V	—
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA	—
Current - Collector Cutoff (Max)	5	µA
Operating Temperature (TJ)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on electrical parameter alignment with the BCW68HR:

Parametric Equivalent: Parts that match all critical electrical specifications (voltage rating, current rating, power dissipation, frequency response, and DC current gain) within the same package family. These parts are direct functional replacements.

Similar Parts: Parts that share the same transistor type (PNP), package form factor (SOT-23-3), and mounting technology (surface mount) but operate within different electrical parameter ranges. Similar parts are suitable for substitution only when circuit design margins accommodate the parameter differences.

Key Parameters Determining Substitution Eligibility:

Transistor Type: PNP (required match)
Package / Case: TO-236-3, SC-59, SOT-23-3 (required match)
Mounting Type: Surface Mount (required match)
Voltage - Collector Emitter Breakdown (Max): ≥45 V
Current - Collector (Ic) (Max): ≥800 mA (for direct equivalence) or ≥500 mA (for similar applications)
Power - Max: ≥250 mW
Frequency - Transition: ≥80 MHz
RoHS Status: ROHS3 Compliant (required match)

Parameter Comparison

Parameter	BCW68HR	BCW68HVL	BC807-16 RFG	BC807-25 RFG	BC807-40 RFG	SMMBT2907ALT1G	SMMBT2907ALT3G	Unit
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	onsemi	onsemi	—
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	—
Voltage - Collector Emitter Breakdown (Max)	45	45	45	45	45	60	60	V
Current - Collector (Ic) (Max)	800	800	500	500	500	600	600	mA
Power - Max	250	250	300	300	300	300	300	mW
Frequency - Transition	80	80	100	100	100	200	200	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 1V	250 @ 100mA, 1V	100 @ 100mA, 1V	160 @ 100mA, 1V	250 @ 100mA, 1V	100 @ 150mA, 10V	100 @ 150mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA	450mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	1.6V @ 50mA, 500mA	1.6V @ 50mA, 500mA	—
Current - Collector Cutoff (Max)	5	5	200	200	200	10	10	nA
Operating Temperature (TJ)	150	150	-55 ~ 150	-55 ~ 150	-55 ~ 150	-55 ~ 150	-55 ~ 150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Active	Active	Active	Active	Active	Active	Active	—

Engineering Selection Recommendations

BCW68HVL (Nexperia USA Inc.): This part is a parametric equivalent to the BCW68HR. All electrical specifications, including voltage rating, current rating, power dissipation, frequency response, and DC current gain, are identical. The BCW68HVL maintains the same automotive grade and AEC-Q101 qualification. This part is suitable for direct substitution in all applications where BCW68HR is specified.

BC807-16 RFG, BC807-25 RFG, BC807-40 RFG (Taiwan Semiconductor Corporation): These parts share the same package form factor and mounting technology as the BCW68HR. However, they operate at reduced maximum collector current (500 mA versus 800 mA) and exhibit higher Vce saturation voltage (700 mV versus 450 mV). These parts are suitable for substitution only in applications where the circuit design accommodates the lower current rating and higher saturation voltage. The BC807-40 RFG variant matches the DC current gain specification of the BCW68HR (250 @ 100mA, 1V).

SMMBT2907ALT1G and SMMBT2907ALT3G (onsemi): These parts operate at higher voltage rating (60 V versus 45 V) and reduced maximum collector current (600 mA versus 800 mA). The Vce saturation voltage is significantly higher (1.6 V versus 450 mV), which may impact circuit performance in switching applications. These parts are suitable for substitution only in applications where the higher voltage rating is beneficial and the circuit design accommodates the higher saturation voltage and lower current rating. Both variants are electrically identical and interchangeable.

All substitute parts maintain ROHS3 compliance and active product status, ensuring long-term availability and regulatory conformance.

Frequently Asked Questions (FAQ)

Q: Can BCW68HVL be used as a direct replacement for BCW68HR?

A: Yes. The BCW68HVL is a parametric equivalent with identical electrical specifications, package form factor, and automotive qualification. No circuit modifications are required.

Q: What are the limitations of using BC807 series transistors as substitutes for BCW68HR?

A: The BC807 series (BC807-16 RFG, BC807-25 RFG, BC807-40 RFG) operates at maximum collector current of 500 mA, which is 37.5% lower than the BCW68HR rating of 800 mA. Additionally, Vce saturation voltage is 700 mV compared to 450 mV for the BCW68HR. These differences require circuit design verification to ensure adequate performance margins. The BC807-40 RFG variant provides matching DC current gain (250 @ 100mA, 1V).

Q: Are SMMBT2907ALT1G and SMMBT2907ALT3G interchangeable?

A: Yes. Both variants are electrically identical and interchangeable. They differ only in manufacturing lot tracking and supplier designation.

Q: Can SMMBT2907 series transistors replace BCW68HR in all applications?

A: No. The SMMBT2907 series operates at 600 mA maximum collector current (25% lower than BCW68HR) and exhibits significantly higher Vce saturation voltage (1.6 V versus 450 mV). These differences are substantial and require circuit design analysis. The higher voltage rating (60 V) may be beneficial in some applications but does not offset the saturation voltage penalty in switching circuits.

Q: Are all substitute parts available in the same package as BCW68HR?

A: Yes. All substitute parts are packaged in TO-236-3 (SOT-23-3) surface mount configuration, which is mechanically and electrically compatible with BCW68HR PCB layouts. No board redesign is required for package compatibility.

Q: Do all substitute parts meet automotive qualification requirements?

A: The BCW68HVL maintains AEC-Q101 automotive qualification identical to BCW68HR. The BC807 series and SMMBT2907 series are not specified with automotive qualification in the provided data. Application of these parts in automotive circuits requires verification against specific design and qualification requirements.

Q: What is the primary difference between BCW68HR and BC807-40 RFG?

A: The primary differences are maximum collector current (800 mA versus 500 mA) and Vce saturation voltage (450 mV versus 700 mV). Both parts share identical DC current gain specification (250 @ 100mA, 1V) and voltage rating (45 V). The BC807-40 RFG is suitable for lower-current applications where the higher saturation voltage is acceptable.

Q: Which substitute part has the highest frequency capability?

A: The SMMBT2907ALT1G and SMMBT2907ALT3G transistors operate at 200 MHz transition frequency, which is 2.5 times higher than the BCW68HR specification of 80 MHz. This enhanced frequency response may be beneficial in high-speed switching applications but does not address the reduced current rating limitation.

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