BCW68G-TP Equivalent & Substitute Parts

Part Overview

The BCW68G-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This transistor operates at a maximum collector current of 800 mA, supports voltages up to 45 V, and delivers a transition frequency of 200 MHz with a maximum power dissipation of 330 mW. The BCW68G-TP maintains active product status with 898 units currently in stock.

Substitute parts become necessary when the primary component experiences supply constraints, extended lead times, or when design requirements permit operation within broader electrical specifications. Alternative transistors in this category maintain compatible package geometries (SOT-23) and electrical performance envelopes suitable for equivalent circuit functionality.

Substiute Parts

BCW68G-TP
Micro Commercial CoIn Stock: 938BCW68G-TP Datasheet
BCW68G-TP
Current Part
BC807-16 RFG
Taiwan Semiconductor CorporationIn Stock: 12854BC807-16 RFG Datasheet
BC807-16 RFG
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BC807-25 RFG
Taiwan Semiconductor CorporationIn Stock: 6653BC807-25 RFG Datasheet
BC807-25 RFG
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BC807-40 RFG
Taiwan Semiconductor CorporationIn Stock: 7057BC807-40 RFG Datasheet
BC807-40 RFG
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BCW68HR
Nexperia USA Inc.In Stock: 4071BCW68HR Datasheet
BCW68HR
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MMBT2907A RFG
Taiwan Semiconductor CorporationIn Stock: 13104MMBT2907A RFG Datasheet
MMBT2907A RFG
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MMBT2907A-7-F
Diodes IncorporatedIn Stock: 125351MMBT2907A-7-F Datasheet
MMBT2907A-7-F
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MMBT2907A-G
Comchip TechnologyIn Stock: 4050MMBT2907A-G Datasheet
MMBT2907A-G
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SMBT2907AE6327HTSA1
Infineon TechnologiesIn Stock: 4171SMBT2907AE6327HTSA1 Datasheet
SMBT2907AE6327HTSA1
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Key Parameters

Parameter BCW68G-TP Value Unit Substitution Relevance
Transistor Type PNP Critical: Must match polarity
Collector Current (Max) 800 mA mA Critical: Determines current handling capability
Collector-Emitter Breakdown Voltage (Max) 45 V V Critical: Establishes maximum operating voltage
Vce Saturation (Max) 700 mV @ 50 mA, 500 mA mV Important: Affects switching performance
DC Current Gain (hFE Min) 160 @ 100 mA, 1 V Important: Influences base drive requirements
Power Dissipation (Max) 330 mW mW Important: Thermal design consideration
Transition Frequency 200 MHz MHz Important: Determines switching speed capability
Operating Temperature Range −55 to 150 °C °C Important: Environmental operating limits
Package Type SOT-23 (TO-236-3) Critical: Physical and electrical compatibility
Mounting Type Surface Mount Critical: Assembly process compatibility

Substitute Part Grouping Explanation

Substitution logic for the BCW68G-TP is based on strict electrical and mechanical parameter compatibility within the PNP bipolar transistor category. Substitute parts must satisfy the following criteria:

Critical Parameters (Must Match or Exceed):

  • Transistor polarity: PNP configuration
  • Package type: SOT-23 (TO-236-3, SC-59, SOT-23-3 variants)
  • Mounting type: Surface mount
  • Collector-emitter breakdown voltage: Minimum 45 V
  • Operating temperature range: Minimum −55 to 150 °C

Performance Parameters (Acceptable if Equal or Superior):

  • Collector current: 800 mA or greater
  • Vce saturation: 700 mV or lower at specified test conditions
  • DC current gain: 160 or greater at 100 mA, 1 V
  • Power dissipation: 330 mW or greater
  • Transition frequency: 200 MHz or greater

Substitute parts are grouped into two categories based on electrical performance alignment:

Group A (Direct Electrical Equivalents): Parts matching or exceeding all performance parameters while maintaining identical package specifications. These include BCW68HR and MMBT2907A variants.

Group B (Functional Equivalents with Trade-offs): Parts meeting critical voltage and current requirements but with reduced performance in secondary parameters such as transition frequency or power dissipation. These include BC807 series variants, which operate at 500 mA maximum collector current and 100 MHz transition frequency.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE (Min) Power mW fT MHz Temp °C Package Status
BCW68G-TP Micro Commercial Co 800 45 700 @ 50mA, 500mA 160 @ 100mA, 1V 330 200 −55 to 150 SOT-23 Active
BC807-16 RFG Taiwan Semiconductor 500 45 700 @ 50mA, 500mA 100 @ 100mA, 1V 300 100 −55 to 150 SOT-23 Active
BC807-25 RFG Taiwan Semiconductor 500 45 700 @ 50mA, 500mA 160 @ 100mA, 1V 300 100 −55 to 150 SOT-23 Active
BC807-40 RFG Taiwan Semiconductor 500 45 700 @ 50mA, 500mA 250 @ 100mA, 1V 300 100 −55 to 150 SOT-23 Active
BCW68HR Nexperia USA Inc. 800 45 450 @ 50mA, 500mA 250 @ 100mA, 1V 250 80 −55 to 150 SOT-23 Active
MMBT2907A RFG Taiwan Semiconductor 600 60 1.6V @ 50mA, 500mA 100 @ 150mA, 10V 350 200 −55 to 150 SOT-23 Active
MMBT2907A-7-F Diodes Incorporated 600 60 1.6V @ 50mA, 500mA 100 @ 150mA, 10V 300 200 −55 to 150 SOT-23-3 Active
MMBT2907A-G Comchip Technology 600 60 1.6V @ 50mA, 500mA 100 @ 150mA, 10V 250 200 −55 to 150 SOT-23-3 Obsolete
SMBT2907AE6327HTSA1 Infineon Technologies 600 60 1.6V @ 50mA, 500mA 100 @ 150mA, 10V 330 200 −55 to 150 SOT-23 Last Time Buy

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs):

BCW68HR and MMBT2907A RFG represent the most suitable substitutes for the BCW68G-TP. BCW68HR maintains identical collector current (800 mA) and breakdown voltage (45 V) specifications while offering superior saturation voltage performance (450 mV versus 700 mV). This part carries active product status and AEC-Q101 automotive qualification, supporting long-term supply continuity. MMBT2907A RFG exceeds the original specification in breakdown voltage (60 V versus 45 V) and transition frequency (200 MHz matching), with active status and high inventory availability (13,080 units).

Secondary Substitutes (Application-Dependent):

BC807-25 RFG provides functional equivalence for applications where collector current requirements do not exceed 500 mA. This part matches the DC current gain specification (160 @ 100 mA, 1 V) and maintains identical saturation voltage characteristics. The reduced transition frequency (100 MHz versus 200 MHz) limits applicability to lower-speed switching circuits. BC807-25 RFG carries active status with 6,546 units in inventory.

Conditional Substitutes (Limited Applicability):

MMBT2907A-7-F (Diodes Incorporated) qualifies as a substitute for applications tolerating higher breakdown voltage (60 V) and modified saturation voltage characteristics (1.6 V). This part carries AEC-Q101 automotive qualification and active product status with substantial inventory (125,300 units). SMBT2907AE6327HTSA1 (Infineon Technologies) matches electrical performance but carries Last Time Buy status, indicating discontinued production. This part should not be selected for new designs requiring long-term supply assurance.

Parts to Avoid:

MMBT2907A-G (Comchip Technology) carries Obsolete product status and should not be used in new designs. BC807-16 RFG exhibits reduced DC current gain (100 @ 100 mA, 1 V) compared to the original specification, limiting suitability for circuits requiring higher gain performance.

Frequently Asked Questions (FAQ)

Q: Can BC807-25 RFG replace BCW68G-TP in all applications?

A: BC807-25 RFG is suitable only for applications where collector current does not exceed 500 mA. The BCW68G-TP supports 800 mA maximum collector current. If the circuit design requires the full 800 mA capability, BC807-25 RFG is not appropriate. Additionally, the transition frequency is reduced from 200 MHz to 100 MHz, limiting applicability in high-speed switching circuits.

Q: What is the difference between MMBT2907A RFG and MMBT2907A-7-F?

A: Both parts share identical electrical specifications: 600 mA collector current, 60 V breakdown voltage, and 200 MHz transition frequency. The primary differences are manufacturer (Taiwan Semiconductor versus Diodes Incorporated) and packaging designation (SOT-23 versus SOT-23-3). Both carry active product status. MMBT2907A-7-F offers significantly higher inventory availability (125,300 units versus 13,080 units).

Q: Is BCW68HR a direct replacement for BCW68G-TP?

A: BCW68HR is functionally equivalent with superior performance in saturation voltage (450 mV versus 700 mV at specified test conditions). Both parts support 800 mA collector current and 45 V breakdown voltage. BCW68HR carries AEC-Q101 automotive qualification and active product status. The primary trade-off is reduced transition frequency (80 MHz versus 200 MHz), which may limit applicability in high-frequency switching circuits.

Q: Why do MMBT2907A variants show different saturation voltage test conditions than BCW68G-TP?

A: MMBT2907A variants specify saturation voltage at 150 mA collector current and 10 V collector-emitter voltage, whereas BCW68G-TP specifies saturation voltage at 100 mA and 1 V. These different test conditions reflect different circuit operating points. Direct comparison requires evaluation within the specific application circuit conditions.

Q: Can I use SMBT2907AE6327HTSA1 in a new product design?

A: SMBT2907AE6327HTSA1 carries Last Time Buy status, indicating the manufacturer has discontinued production and established a final purchase deadline. This part should not be selected for new product designs requiring long-term component availability. Use MMBT2907A RFG or MMBT2907A-7-F instead.

Q: What does the "RFG" designation in part numbers indicate?

A: The "RFG" suffix indicates the packaging format and supplier designation. Parts designated RFG are supplied in Tape & Reel (TR) format, suitable for automated assembly processes. This designation does not affect electrical performance or functional compatibility.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed carry RoHS3 compliance status. The original BCW68G-TP does not specify RoHS status in the provided data. All parts maintain REACH Unaffected status and EAR99 export classification.

Q: What is the significance of the operating temperature range difference in BCW68HR?

A: BCW68HR specifies maximum operating temperature of 150 °C (TJ) without a minimum temperature specification in the provided data, whereas BCW68G-TP specifies −55 to 150 °C. For applications requiring operation below room temperature, BCW68G-TP or other parts with explicit −55 °C minimum specification are required.

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