BCW61CMTF Equivalent & Substitute Parts

Part Overview

The BCW61CMTF is a PNP bipolar junction transistor manufactured by onsemi, housed in a SOT-23-3 surface mount package. This device is rated for 32 V collector-emitter breakdown voltage and 100 mA maximum collector current, with a maximum power dissipation of 350 mW. The BCW61CMTF is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Max	100	mA
Collector-Emitter Breakdown Voltage (Max)	32	V
Power Dissipation (Max)	350	mW
Vce Saturation (Max)	550 mV @ 1.25 mA, 50 mA	—
DC Current Gain (hFE) Min	250 @ 2 mA, 5 V	—
Mounting Type	Surface Mount	—
Package	SOT-23-3 (TO-236-3, SC-59)	—

Substitute Part Grouping Explanation

Substitution of the BCW61CMTF is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor type must be PNP
Collector current rating must be ≥100 mA
Collector-emitter breakdown voltage must be ≥32 V
Power dissipation must be ≥350 mW (or ≥300 mW for reduced-power applications)
Vce saturation characteristics must be compatible with circuit bias conditions
DC current gain (hFE) must support intended amplification or switching requirements

Mechanical Compatibility Requirements:

Surface mount package format (SOT-23-3, TO-236-3, or equivalent)
Pin configuration must match SOT-23-3 standard

Compliance & Status:

Active product status preferred for long-term availability
RoHS3 compliance for environmental standards
Moisture sensitivity level 1 (unlimited shelf life)

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary electrical and mechanical specifications) and Functional Alternatives (meeting electrical requirements with minor parameter variations or different manufacturers).

Parameter Comparison

Part Number	Manufacturer	Status	Ic Max (mA)	Vce Breakdown (V)	Power Max (mW)	hFE Min @ 2mA, 5V	Vce Sat (mV)	Package
BCW61CMTF	onsemi	Obsolete	100	32	350	250	550	SOT-23-3
BCW61C,215	Nexperia USA Inc.	Active	100	32	250	250	550	TO-236AB
BCW30LT1G	onsemi	Active	100	32	300	215	300	SOT-23-3
BC858ALT1G	onsemi	Active	100	30	300	125	650	SOT-23-3
BC858BLT1G	onsemi	Active	100	30	300	220	650	SOT-23-3
NSVBC858CLT1G	onsemi	Active	100	30	300	420	650	SOT-23-3
BC858A RFG	Taiwan Semiconductor Corporation	Active	100	30	200	125	650	SOT-23
BC858B RFG	Taiwan Semiconductor Corporation	Active	100	30	200	220	650	SOT-23
BC858B,215	Nexperia USA Inc.	Active	100	30	250	220	650	TO-236AB
2SB1695KT146	Rohm Semiconductor	Active	1500	30	200	270	370	SMT3
2SB1695TL	Rohm Semiconductor	Active	1500	30	500	270	370	TSMT3

Engineering Selection Recommendations

Primary Recommendation: BCW61C,215

The BCW61C,215 manufactured by Nexperia USA Inc. is the direct equivalent to the BCW61CMTF. This part maintains identical electrical specifications: 32 V collector-emitter breakdown voltage, 100 mA maximum collector current, 250 mW power dissipation, and 550 mV Vce saturation at specified bias conditions. The BCW61C,215 is active in production, RoHS3 compliant, and carries AEC-Q101 automotive qualification. The TO-236AB package is mechanically compatible with SOT-23-3 footprints. This substitution requires no circuit redesign.

Secondary Recommendation: BCW30LT1G

The BCW30LT1G from onsemi is an active alternative that matches the 32 V breakdown voltage specification of the original BCW61CMTF. This part supports 100 mA collector current and 300 mW power dissipation. The primary difference is reduced Vce saturation (300 mV versus 550 mV), which may improve switching performance in certain applications. The BCW30LT1G is RoHS3 compliant and housed in SOT-23-3 package. Circuit validation is recommended to confirm compatibility with existing bias networks.

Tertiary Alternatives: BC858 Series

The BC858ALT1G, BC858BLT1G, and NSVBC858CLT1G from onsemi, along with BC858A RFG and BC858B RFG from Taiwan Semiconductor Corporation, and BC858B,215 from Nexperia USA Inc., are functional alternatives. These parts support 100 mA collector current in SOT-23-3 or equivalent packages. The primary limitation is reduced collector-emitter breakdown voltage (30 V versus 32 V), which restricts use to applications with maximum supply voltages below 30 V. These parts are active, RoHS3 compliant, and offer varying DC current gain specifications. Selection among BC858 variants depends on required hFE characteristics and operating temperature range.

Not Recommended: 2SB1695 Series

The 2SB1695KT146 and 2SB1695TL from Rohm Semiconductor are high-current devices (1.5 A maximum) designed for different application classes. While electrically functional as PNP transistors, these parts exceed the current and power requirements of the BCW61CMTF and are not suitable direct substitutes. Use of these parts would result in unnecessary cost and board space inefficiency.

Frequently Asked Questions (FAQ)

Q: Can I use BC858 series transistors as direct replacements for BCW61CMTF?

A: BC858 series transistors are functional alternatives for applications with maximum supply voltages of 30 V or less. The BCW61CMTF is rated for 32 V breakdown voltage, while BC858 variants are rated for 30 V. If your circuit operates at or above 30 V, use BCW61C,215 or BCW30LT1G instead. BC858 parts are otherwise electrically compatible in SOT-23-3 packages.

Q: What is the difference between BCW61C,215 and BCW61CMTF?

A: BCW61C,215 is the active production equivalent manufactured by Nexperia USA Inc., while BCW61CMTF is the obsolete onsemi version. Both share identical electrical specifications: 32 V breakdown voltage, 100 mA collector current, 250 mW power dissipation, and 550 mV Vce saturation. The BCW61C,215 is RoHS3 compliant and AEC-Q101 qualified. No circuit changes are required for substitution.

Q: Why does BCW30LT1G have lower Vce saturation than BCW61CMTF?

A: Vce saturation is a transistor characteristic determined by semiconductor design and doping profiles. The BCW30LT1G exhibits 300 mV saturation versus 550 mV for BCW61CMTF at specified bias conditions. Lower saturation voltage can improve switching speed and reduce power dissipation in switching applications. Circuit validation is recommended to confirm this change does not affect bias point stability or signal levels.

Q: Are all substitute parts available in SOT-23-3 package?

A: Most substitutes are available in SOT-23-3 or mechanically equivalent packages (TO-236-3, SC-59, TO-236AB). The 2SB1695 series uses different packages (SMT3, TSMT3) and are not recommended for direct substitution. Verify package compatibility with your PCB footprint before selection.

Q: What does RoHS3 compliance mean for this transistor?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All recommended substitute parts carry RoHS3 compliance, ensuring compatibility with environmental regulations and modern manufacturing standards.

Q: Can I use BC858B,215 in automotive applications?

A: BC858B,215 from Nexperia USA Inc. carries AEC-Q101 automotive qualification and is suitable for automotive applications. However, the 30 V breakdown voltage rating limits use to circuits with maximum supply voltages below 30 V. For automotive applications requiring 32 V operation, use BCW61C,215, which also carries AEC-Q101 qualification.

Q: What is the moisture sensitivity level (MSL) for these transistors?

A: All listed substitute parts carry MSL 1 (Unlimited), indicating unlimited shelf life without moisture baking requirements. These parts can be stored and handled under standard conditions without special moisture control measures.

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