BCW61CE6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BCW61CE6327HTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies, specified for 32 V collector-emitter breakdown voltage and 100 mA maximum collector current in a surface mount SOT-23-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	32	V
Vce Saturation (Max) @ Ib, Ic	550 mV @ 1.25 mA, 50 mA	—
Current - Collector Cutoff (Max)	20	nA
DC Current Gain (hFE) Min @ Ic, Vce	250 @ 2 mA, 5 V	—
Power - Max	330	mW
Frequency - Transition	250	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BCW61CE6327HTSA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor type must be PNP
Collector-emitter breakdown voltage must be ≥ 32 V
Maximum collector current must be ≥ 100 mA
Surface mount package compatibility (SOT-23-3 or equivalent mechanical footprint)
Operating temperature range must support 150°C (TJ)
RoHS3 compliance required

Secondary Compatibility Factors:

DC current gain (hFE) minimum ≥ 250 at specified test conditions
Vce saturation characteristics within acceptable operating margins
Transition frequency ≥ 250 MHz for high-speed applications
Power dissipation capability ≥ 330 mW

Substitute parts are grouped into two categories:

Category 1: Direct Equivalents (Identical Electrical Specifications) Parts meeting all primary criteria with minimal parameter variance, suitable for direct replacement without circuit redesign.

Category 2: Functional Substitutes (Enhanced or Comparable Specifications) Parts exceeding minimum requirements in collector current, voltage rating, or power dissipation, applicable when design margins permit higher-rated components.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	hFE Min @ Ic, Vce	Power Max mW	Freq MHz	Package	Status
BCW61CE6327HTSA1	Infineon	100	32	250 @ 2mA, 5V	330	250	SOT-23-3	Obsolete
BCW61C,215	Nexperia USA Inc.	100	32	250 @ 2mA, 5V	250	100	SOT-23-3	Active
2SB1695KT146	Rohm Semiconductor	1500	30	270 @ 100mA, 2V	200	280	SOT-23-3	Active
2SB1695TL	Rohm Semiconductor	1500	30	270 @ 100mA, 2V	500	280	SC-96	Active
2SB1706TL	Rohm Semiconductor	2000	30	270 @ 200mA, 2V	500	280	SC-96	Active
2SB1708TL	Rohm Semiconductor	3000	30	270 @ 200mA, 2V	500	200	SC-96	Active
2SB1710TL	Rohm Semiconductor	1000	30	270 @ 100mA, 2V	500	320	SC-96	Active
2STR2230	STMicroelectronics	1500	30	170 @ 500mA, 2V	500	100	SOT-23-3	Active
BC807-40-7-F	Diodes Incorporated	500	45	250 @ 100mA, 1V	310	100	SOT-23-3	Active
BC858A RFG	Taiwan Semiconductor	100	30	125 @ 2mA, 5V	200	100	SOT-23-3	Active
BC858ALT1G	onsemi	100	30	125 @ 2mA, 5V	300	100	SOT-23-3	Active

Engineering Selection Recommendations

Primary Recommendation: BCW61C,215 (Nexperia USA Inc.)

The BCW61C,215 is the direct electrical equivalent of the BCW61CE6327HTSA1, maintaining identical collector current (100 mA), collector-emitter breakdown voltage (32 V), and DC current gain specifications. This part is manufactured by Nexperia USA Inc., an active supplier with 15,200 units in stock. The device carries AEC-Q101 automotive qualification and ROHS3 compliance. The primary difference is reduced power dissipation (250 mW vs. 330 mW) and lower transition frequency (100 MHz vs. 250 MHz), which are acceptable for most low-signal applications. Packaging is TO-236-3 (SOT-23-3), maintaining mechanical compatibility.

Secondary Recommendation: BC807-40-7-F (Diodes Incorporated)

The BC807-40-7-F provides enhanced voltage rating (45 V vs. 32 V) and higher collector current capability (500 mA vs. 100 mA) while maintaining SOT-23-3 package compatibility. DC current gain (250 @ 100 mA, 1V) matches the original specification. This part is suitable for applications requiring design margin improvement or future voltage stress tolerance. Active status with 17,100 units in stock ensures supply continuity.

Alternative for Higher Current Applications: 2SB1710TL (Rohm Semiconductor)

For designs requiring increased collector current capacity (1 A vs. 100 mA) with maintained voltage rating (30 V), the 2SB1710TL offers superior transition frequency (320 MHz) and power dissipation (500 mW). Package change to SC-96 requires PCB layout modification. Active status with 15,500 units in stock.

Not Recommended: BC858A RFG and BC858ALT1G

These devices exhibit reduced DC current gain (125 @ 2 mA, 5V vs. 250 @ 2 mA, 5V) and lower collector-emitter breakdown voltage (30 V vs. 32 V), creating potential circuit performance degradation in gain-critical applications.

Frequently Asked Questions (FAQ)

Q1: Can BCW61C,215 directly replace BCW61CE6327HTSA1 without circuit modification?

Yes. The BCW61C,215 maintains identical electrical specifications for collector current (100 mA), collector-emitter breakdown voltage (32 V), and DC current gain (250 @ 2 mA, 5V). Both devices use SOT-23-3 packaging with identical pinout. No circuit redesign is required.

Q2: What is the primary difference between BCW61C,215 and the original BCW61CE6327HTSA1?

The BCW61C,215 has reduced maximum power dissipation (250 mW vs. 330 mW) and lower transition frequency (100 MHz vs. 250 MHz). These differences are acceptable for low-signal switching and amplification applications operating below 100 MHz.

Q3: Why are Rohm 2SB1695/2SB1706/2SB1708/2SB1710 series parts listed as substitutes despite higher collector current ratings?

These parts exceed the minimum electrical requirements (Ic ≥ 100 mA, Vce(br) ≥ 32 V) and maintain PNP transistor type and surface mount configuration. They are functional substitutes for applications where design margins permit higher-rated components. However, package change from SOT-23-3 to SC-96 requires PCB layout modification.

Q4: Is BC807-40-7-F suitable for direct replacement?

BC807-40-7-F is mechanically and electrically compatible (SOT-23-3 package, 500 mA Ic, 45 V Vce(br), 250 hFE). It provides enhanced voltage and current ratings. Direct replacement is possible without circuit modification, with the benefit of improved design margin.

Q5: What is the significance of the 32 V collector-emitter breakdown voltage specification?

The 32 V rating defines the maximum reverse voltage the transistor can withstand between collector and emitter before breakdown occurs. Substitute parts must maintain ≥ 32 V rating to ensure equivalent circuit protection and reliability. Parts rated at 30 V (BC858 series, 2SB1695/1706/1708/1710) operate at reduced margin.

Q6: Why is transition frequency (fT) important for substitution?

Transition frequency indicates the maximum frequency at which the transistor maintains useful gain. The original BCW61CE6327HTSA1 specifies 250 MHz. Substitutes with lower fT (100 MHz) are suitable for DC and low-frequency applications but may exhibit reduced gain at higher frequencies. Higher fT substitutes (280 MHz, 320 MHz) provide improved high-frequency performance.

Q7: Are all listed substitutes RoHS3 compliant?

Yes. All substitute parts listed carry ROHS3 compliance certification, meeting environmental and hazardous substance restrictions equivalent to the original BCW61CE6327HTSA1.

Q8: What packaging considerations apply to Rohm 2SB series substitutes?

Rohm 2SB1695KT146 uses SMT3 package (SOT-23-3 compatible footprint). Rohm 2SB1695TL, 2SB1706TL, 2SB1708TL, and 2SB1710TL use SC-96 package, which differs mechanically from SOT-23-3. SC-96 package substitution requires PCB layout redesign and verification of thermal performance.

Q9: Which substitute offers the best balance of electrical performance and supply availability?

BCW61C,215 (Nexperia) provides optimal balance: direct electrical equivalence, active production status, 15,200 units in stock, AEC-Q101 automotive qualification, and SOT-23-3 package compatibility requiring no layout modification.

Q10: Can BC858ALT1G be used as a substitute despite lower DC current gain?

BC858ALT1G exhibits 125 hFE minimum (vs. 250 for the original), representing 50% gain reduction. This part is not recommended for gain-critical applications. Use is limited to circuits with sufficient design margin or where reduced gain is acceptable.

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