BCW60CE6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BCW60CE6327HTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies, designed for general-purpose switching and amplification applications. This device features a 32 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 250 MHz transition frequency in a surface-mount SOT-23-3 package. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Substiute Parts

BCW60CE6327HTSA1
Infineon TechnologiesIn Stock: 1167BCW60CE6327HTSA1 Datasheet
BCW60CE6327HTSA1
Current Part
BCW60FFE6327HTSA1
Infineon TechnologiesIn Stock: 743BCW60FFE6327HTSA1 Datasheet
BCW60FFE6327HTSA1
Parametric Equivalent
BCW60C,215
Nexperia USA Inc.In Stock: 4455BCW60C,215 Datasheet
BCW60C,215
Direct
2SD2657KT146
Rohm SemiconductorIn Stock: 162772SD2657KT146 Datasheet
2SD2657KT146
MFR Recommended
BC817-40-7-F
Diodes IncorporatedIn Stock: 20370BC817-40-7-F Datasheet
BC817-40-7-F
MFR Recommended
BC848ALT1G
onsemiIn Stock: 42466BC848ALT1G Datasheet
BC848ALT1G
MFR Recommended
BC848B RFG
Taiwan Semiconductor CorporationIn Stock: 9722BC848B RFG Datasheet
BC848B RFG
MFR Recommended
BC848B,215
Nexperia USA Inc.In Stock: 2312BC848B,215 Datasheet
BC848B,215
MFR Recommended
BC848B,235
Nexperia USA Inc.In Stock: 9202BC848B,235 Datasheet
BC848B,235
MFR Recommended
BC848B-7-F
Diodes IncorporatedIn Stock: 9493BC848B-7-F Datasheet
BC848B-7-F
MFR Recommended
BC848BLT1G
onsemiIn Stock: 17318BC848BLT1G Datasheet
BC848BLT1G
MFR Recommended
BC848BLT3G
onsemiIn Stock: 9824BC848BLT3G Datasheet
BC848BLT3G
MFR Recommended
BC848C-7-F
Diodes IncorporatedIn Stock: 39374BC848C-7-F Datasheet
BC848C-7-F
MFR Recommended
BC848CLT1G
onsemiIn Stock: 6287BC848CLT1G Datasheet
BC848CLT1G
MFR Recommended
BC849B,215
Nexperia USA Inc.In Stock: 8035BC849B,215 Datasheet
BC849B,215
MFR Recommended
BC849B,235
Nexperia USA Inc.In Stock: 11023BC849B,235 Datasheet
BC849B,235
MFR Recommended
BC849BLT1G
onsemiIn Stock: 1185BC849BLT1G Datasheet
BC849BLT1G
MFR Recommended
BC849C,215
Nexperia USA Inc.In Stock: 75800BC849C,215 Datasheet
BC849C,215
MFR Recommended
BC849C-TP
Micro Commercial CoIn Stock: 3855BC849C-TP Datasheet
BC849C-TP
MFR Recommended
BC849CLT1G
onsemiIn Stock: 33116BC849CLT1G Datasheet
BC849CLT1G
MFR Recommended
BCW31,215
NXP USA Inc.In Stock: 42746BCW31,215 Datasheet
BCW31,215
MFR Recommended
BCW32,215
Nexperia USA Inc.In Stock: 3238BCW32,215 Datasheet
BCW32,215
MFR Recommended
BCW32,235
Nexperia USA Inc.In Stock: 10681BCW32,235 Datasheet
BCW32,235
MFR Recommended
BCW32LT1G
onsemiIn Stock: 21552BCW32LT1G Datasheet
BCW32LT1G
MFR Recommended
BCW33,215
Nexperia USA Inc.In Stock: 2368BCW33,215 Datasheet
BCW33,215
MFR Recommended
BCW33LT1G
onsemiIn Stock: 3419BCW33LT1G Datasheet
BCW33LT1G
MFR Recommended
BCW60B,215
Nexperia USA Inc.In Stock: 2315BCW60B,215 Datasheet
BCW60B,215
MFR Recommended
BCW60B,235
Nexperia USA Inc.In Stock: 898BCW60B,235 Datasheet
BCW60B,235
MFR Recommended
BCW60C,235
Nexperia USA Inc.In Stock: 994BCW60C,235 Datasheet
BCW60C,235
MFR Recommended
BCW60CT116
Rohm SemiconductorIn Stock: 813BCW60CT116 Datasheet
BCW60CT116
MFR Recommended
BCW60D,215
NXP USA Inc.In Stock: 16550BCW60D,215 Datasheet
BCW60D,215
MFR Recommended
BCW60D,235
Nexperia USA Inc.In Stock: 750BCW60D,235 Datasheet
BCW60D,235
MFR Recommended
BCW65ALT1G
onsemiIn Stock: 1168BCW65ALT1G Datasheet
BCW65ALT1G
MFR Recommended
BCW65CLT1G
onsemiIn Stock: 12358BCW65CLT1G Datasheet
BCW65CLT1G
MFR Recommended
FMMT449TA
Diodes IncorporatedIn Stock: 17650FMMT449TA Datasheet
FMMT449TA
MFR Recommended
FMMT489TA
Diodes IncorporatedIn Stock: 47048FMMT489TA Datasheet
FMMT489TA
MFR Recommended
MMBT2222LT1G
onsemiIn Stock: 21700MMBT2222LT1G Datasheet
MMBT2222LT1G
MFR Recommended
MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
MFR Recommended
MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
MFR Recommended
MMBT3416LT3G
onsemiIn Stock: 8310MMBT3416LT3G Datasheet
MMBT3416LT3G
MFR Recommended
MMBT3904LT1G
onsemiIn Stock: 605202MMBT3904LT1G Datasheet
MMBT3904LT1G
MFR Recommended
MMBT3904LT3G
onsemiIn Stock: 360379MMBT3904LT3G Datasheet
MMBT3904LT3G
MFR Recommended
MMBT489LT1G
onsemiIn Stock: 39122MMBT489LT1G Datasheet
MMBT489LT1G
MFR Recommended
MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
MFR Recommended
NSS30101LT1G
onsemiIn Stock: 295086NSS30101LT1G Datasheet
NSS30101LT1G
MFR Recommended
NSVBC848CLT1G
onsemiIn Stock: 3017NSVBC848CLT1G Datasheet
NSVBC848CLT1G
MFR Recommended
NSVBCW32LT1G
onsemiIn Stock: 1157NSVBCW32LT1G Datasheet
NSVBCW32LT1G
MFR Recommended
PBSS4130T,215
Nexperia USA Inc.In Stock: 2535PBSS4130T,215 Datasheet
PBSS4130T,215
MFR Recommended
PBSS4230T,215
Nexperia USA Inc.In Stock: 6141PBSS4230T,215 Datasheet
PBSS4230T,215
MFR Recommended
PMBS3904,215
Nexperia USA Inc.In Stock: 9899PMBS3904,215 Datasheet
PMBS3904,215
MFR Recommended
PMBS3904,235
Nexperia USA Inc.In Stock: 90266PMBS3904,235 Datasheet
PMBS3904,235
MFR Recommended
PMBT2222,215
Nexperia USA Inc.In Stock: 3967PMBT2222,215 Datasheet
PMBT2222,215
MFR Recommended
SBC848BLT1G
onsemiIn Stock: 54194SBC848BLT1G Datasheet
SBC848BLT1G
MFR Recommended
SBCW33LT1G
onsemiIn Stock: 7103SBCW33LT1G Datasheet
SBCW33LT1G
MFR Recommended
SMMBT3904LT1G
onsemiIn Stock: 287321SMMBT3904LT1G Datasheet
SMMBT3904LT1G
MFR Recommended
SMMBT3904LT3G
onsemiIn Stock: 400429SMMBT3904LT3G Datasheet
SMMBT3904LT3G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 32 V
Vce Saturation (Max) 550 mV @ 1.25mA, 50mA
Collector Cutoff Current (Max) 20 nA
DC Current Gain (hFE Min) 250 @ 2mA, 5V
Power Dissipation (Max) 330 mW
Transition Frequency 250 MHz
Operating Temperature (Max) 150 °C
Package Type SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BCW60CE6327HTSA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be NPN
  • Collector current rating must be ≥100 mA
  • Collector-emitter breakdown voltage must be ≥32 V
  • Package must be SOT-23-3 (TO-236-3, SC-59) surface mount
  • Vce saturation characteristics must be compatible with application requirements
  • DC current gain (hFE) must support intended circuit operation

Substitution Categories:

Category 1: Direct Parametric Equivalents — Parts with identical or superior electrical specifications and matching package type. These parts maintain full functional compatibility with the original BCW60CE6327HTSA1 in standard applications.

Category 2: Functional Equivalents with Enhanced Specifications — Parts that exceed the original specifications in one or more parameters (higher current rating, higher voltage rating, or higher frequency capability) while maintaining the same package and basic electrical characteristics. These parts are suitable for direct substitution with potential performance improvements.

Category 3: Automotive-Grade Alternatives — Parts qualified to AEC-Q101 automotive standards with active product status, offering enhanced reliability and traceability for applications requiring automotive-grade components.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE (Min) Freq MHz Power mW Package Status
BCW60CE6327HTSA1 Infineon 100 32 550 250 250 330 SOT-23-3 Obsolete
BCW60FFE6327HTSA1 Infineon 100 32 550 250 250 330 SOT-23-3 Discontinued
BCW60C,215 Nexperia USA Inc. 100 32 550 250 250 250 SOT-23-3 Active
2SD2657KT146 Rohm Semiconductor 1500 30 350 270 330 200 SOT-23-3 Active
BC817-40-7-F Diodes Incorporated 500 45 700 250 100 310 SOT-23-3 Active
BC848ALT1G onsemi 100 30 600 110 100 300 SOT-23-3 Active
BC848B RFG Taiwan Semiconductor Corporation 100 30 500 200 100 200 SOT-23-3 Active
BC848B,215 Nexperia USA Inc. 100 30 600 200 100 250 SOT-23-3 Active
BC848B,235 Nexperia USA Inc. 100 30 600 200 100 250 SOT-23-3 Active
BC848B-7-F Diodes Incorporated 100 30 600 200 300 300 SOT-23-3 Active
BC848BLT1G onsemi 100 30 600 200 100 300 SOT-23-3 Active

Engineering Selection Recommendations

Tier 1: Direct Replacement (Highest Compatibility)

The BCW60C,215 manufactured by Nexperia USA Inc. is the primary recommended substitute. This part maintains identical electrical specifications to the BCW60CE6327HTSA1 across all critical parameters: 100 mA collector current, 32 V breakdown voltage, 250 MHz transition frequency, and 550 mV saturation voltage. The BCW60C,215 is active in production with 4400 units in stock and carries AEC-Q101 automotive qualification, providing enhanced reliability and supply chain stability. The only parameter difference is reduced power dissipation (250 mW vs. 330 mW), which is advantageous for thermal management.

Tier 2: Functional Equivalents with Enhanced Specifications

The BC848B-7-F (Diodes Incorporated) and BC848BLT1G (onsemi) are active alternatives with matching 100 mA collector current and SOT-23-3 packaging. These parts operate at 30 V breakdown voltage (2 V lower than the original) and 100 MHz transition frequency (150 MHz lower than the original). Both parts are suitable for applications where the original 32 V and 250 MHz specifications are not critical requirements. The BC848B-7-F offers enhanced transition frequency capability at 300 MHz, providing performance margin for higher-speed applications.

Tier 3: Higher Current Capability Alternative

The 2SD2657KT146 (Rohm Semiconductor) provides significantly enhanced current handling at 1.5 A maximum collector current while maintaining the SOT-23-3 package. This part operates at 30 V breakdown voltage and 330 MHz transition frequency. Selection of this part is appropriate only when higher current capacity is required and the 2 V reduction in breakdown voltage is acceptable for the application.

Tier 4: Higher Voltage Alternative

The BC817-40-7-F (Diodes Incorporated) offers 45 V collector-emitter breakdown voltage with 500 mA current capability. This part is suitable for applications requiring higher voltage headroom, though it operates at only 100 MHz transition frequency. AEC-Q101 automotive qualification is available.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status, matching the original part's environmental and regulatory standing. The BCW60C,215 and BC848B,235 carry AEC-Q101 automotive qualification, providing additional assurance for mission-critical applications.

Frequently Asked Questions (FAQ)

Q: Can the BCW60C,215 be used as a direct replacement for the BCW60CE6327HTSA1?

A: Yes. The BCW60C,215 maintains identical electrical specifications across all critical parameters: 100 mA collector current, 32 V breakdown voltage, 250 MHz transition frequency, and 550 mV saturation voltage. Both parts use the SOT-23-3 package. The BCW60C,215 is active in production with higher inventory availability.

Q: What is the difference between the BCW60CE6327HTSA1 and BCW60FFE6327HTSA1?

A: These parts are parametric equivalents with identical electrical specifications. The BCW60FFE6327HTSA1 is discontinued at DiGi Electronics, whereas the BCW60CE6327HTSA1 is obsolete. Neither part is recommended for new designs due to availability constraints.

Q: Can I use BC848B series parts as substitutes?

A: BC848B series parts (BC848B RFG, BC848B,215, BC848B,235, BC848B-7-F, BC848BLT1G) are functional alternatives with matching 100 mA collector current and SOT-23-3 packaging. However, these parts operate at 30 V breakdown voltage instead of 32 V, and 100 MHz transition frequency instead of 250 MHz. Substitution is appropriate only when the application does not require the full 32 V rating or 250 MHz frequency capability.

Q: What is the significance of the AEC-Q101 qualification on the BCW60C,215?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. This certification is relevant for applications in automotive, industrial, or other mission-critical environments where enhanced traceability and reliability assurance are required.

Q: Why does the BCW60C,215 have lower power dissipation (250 mW vs. 330 mW) than the original part?

A: The reduced power dissipation rating reflects the supplier's specification for the BCW60C,215. This difference is not a limitation but rather an advantage, as it indicates improved thermal efficiency. The part can still handle the same electrical load within its rated current and voltage specifications.

Q: Can I use the 2SD2657KT146 if I need higher current capability?

A: Yes. The 2SD2657KT146 provides 1.5 A maximum collector current compared to 100 mA in the original part, while maintaining the SOT-23-3 package. However, this part operates at 30 V breakdown voltage (2 V lower) and requires verification that this voltage reduction is acceptable for your application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance, matching the environmental and regulatory status of the original BCW60CE6327HTSA1.

Q: What packaging options are available for substitutes?

A: All substitute parts use the SOT-23-3 (TO-236-3, SC-59) surface-mount package, maintaining mechanical and electrical compatibility with the original part's footprint and pinout.

Q: Which substitute offers the best supply chain availability?

A: The BCW60C,215 (Nexperia USA Inc.) offers the highest inventory availability with 4400 units in stock and active product status, providing the most reliable supply chain continuity.

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