BCW60B,235 Equivalent & Substitute Parts

Part Overview

The BCW60B,235 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the TO-236AB package. This component operates at a maximum collector current of 100 mA, collector-emitter breakdown voltage of 32 V, and maximum power dissipation of 250 mW. The device is qualified to AEC-Q101 automotive standards and carries Active product status with ROHS3 compliance.

Equivalent and substitute parts are identified when design requirements permit operation within the specified electrical and mechanical parameters of the BCW60B,235. Substitution becomes necessary due to inventory availability, manufacturing discontinuation, or supply chain optimization while maintaining circuit performance within defined tolerances.

Substiute Parts

BCW60B,235
Nexperia USA Inc.In Stock: 898BCW60B,235 Datasheet
BCW60B,235
Current Part
BCW60B,215
Nexperia USA Inc.In Stock: 2315BCW60B,215 Datasheet
BCW60B,215
Parametric Equivalent
2SD2657KT146
Rohm SemiconductorIn Stock: 162772SD2657KT146 Datasheet
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BC848A RFG
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BC848ALT1G
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BC848B RFG
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BC848B-7-F
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BC848BE6327HTSA1
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BC848BLT1G
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BC848C RFG
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BC848C-7-F
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BC848CLT1G
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BC849C-TP
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BCW32LT1G
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 550 mV @ 1.25 mA, 50 mA
Current - Collector Cutoff (Max) 20 nA
DC Current Gain (hFE) Min @ Ic, Vce 180 @ 2 mA, 5 V
Power - Max 250 mW
Frequency - Transition 250 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BCW60B,235 are classified into two categories based on parametric equivalence and similarity:

Parametric Equivalent Parts maintain identical or functionally equivalent electrical specifications across all critical parameters: collector current (100 mA), collector-emitter breakdown voltage (32 V or higher), power dissipation (250 mW or higher), transition frequency (250 MHz or higher), and DC current gain (180 or higher at specified test conditions). These parts operate within the same design envelope and require no circuit modification.

Similar Parts share the same transistor type (NPN), package family (TO-236-3/SOT-23-3), and mounting technology (surface mount), but operate with reduced maximum ratings in one or more critical parameters. Substitution of similar parts requires design verification to confirm circuit operation within the reduced parameter limits.

The key parameters determining substitution eligibility are:

  • Collector current rating (Ic Max): Must equal or exceed 100 mA
  • Collector-emitter breakdown voltage (Vceo): Must equal or exceed 32 V
  • Power dissipation (Pmax): Must equal or exceed 250 mW
  • Transition frequency (fT): Must equal or exceed 250 MHz
  • DC current gain (hFE): Must equal or exceed 180 at specified test conditions
  • Package compatibility: TO-236-3, SC-59, or SOT-23-3 surface mount packages
  • Automotive qualification and AEC-Q101 certification (where applicable)

Parameter Comparison

Manufacturer Part Number Manufacturer Ic Max (mA) Vceo Max (V) Pmax (mW) fT (MHz) hFE Min @ Ic, Vce Package Product Status AEC-Q101
BCW60B,235 Nexperia USA Inc. 100 32 250 250 180 @ 2 mA, 5 V TO-236AB Active Yes
BCW60B,215 Nexperia USA Inc. 100 32 250 250 180 @ 2 mA, 5 V TO-236AB Active Yes
2SD2657KT146 Rohm Semiconductor 1500 30 200 330 270 @ 100 mA, 2 V SMT3 Active No
BC848A RFG Taiwan Semiconductor Corporation 100 30 200 100 110 @ 2 mA, 5 V SOT-23 Active No
BC848ALT1G onsemi 100 30 300 100 110 @ 2 mA, 5 V SOT-23-3 Active No
BC848B RFG Taiwan Semiconductor Corporation 100 30 200 100 200 @ 2 mA, 5 V SOT-23 Active No
BC848B-7-F Diodes Incorporated 100 30 300 300 200 @ 2 mA, 5 V SOT-23-3 Active No
BC848BE6327HTSA1 Infineon Technologies 100 30 330 250 200 @ 2 mA, 5 V PG-SOT23 Last Time Buy No
BC848BLT1G onsemi 100 30 300 100 200 @ 2 mA, 5 V SOT-23-3 Active No
BC848C RFG Taiwan Semiconductor Corporation 100 30 200 100 420 @ 2 mA, 5 V SOT-23 Active No
BC848C-7-F Diodes Incorporated 100 30 300 300 420 @ 2 mA, 5 V SOT-23-3 Active No

Engineering Selection Recommendations

Parametric Equivalent Selection

BCW60B,215 (Nexperia USA Inc.) is a parametric equivalent to BCW60B,235. Both devices share identical electrical specifications, automotive qualification, AEC-Q101 certification, and Active product status. The difference between these part numbers reflects packaging tape configuration only. Selection between BCW60B,235 and BCW60B,215 depends on supply chain availability and procurement requirements. Both parts are suitable for direct substitution without circuit modification.

Similar Part Selection Considerations

BC848 series transistors (BC848A RFG, BC848ALT1G, BC848B RFG, BC848B-7-F, BC848BLT1G, BC848C RFG, BC848C-7-F) operate with reduced collector-emitter breakdown voltage (30 V versus 32 V) and reduced transition frequency (100 MHz or 300 MHz versus 250 MHz). These parts are suitable for applications where the 32 V breakdown voltage specification is not a critical design requirement and where the reduced frequency response is acceptable.

BC848BE6327HTSA1 (Infineon Technologies) carries Last Time Buy status, indicating manufacturing discontinuation. This part should not be selected for new designs or long-term production requirements.

2SD2657KT146 (Rohm Semiconductor) operates with significantly higher collector current (1.5 A versus 100 mA) and reduced power dissipation (200 mW versus 250 mW). This part is not suitable for direct substitution due to parametric mismatch in current rating and power handling.

Compliance and Certification

BCW60B,235 and BCW60B,215 maintain automotive grade classification and AEC-Q101 qualification. Substitute parts from the BC848 series do not carry automotive qualification or AEC-Q101 certification. Selection of non-qualified parts for automotive applications requires design review and customer approval.

All listed parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status.

Frequently Asked Questions (FAQ)

Q: Can BC848 series transistors directly replace the BCW60B,235?

A: BC848 series transistors share the same package family (TO-236-3/SOT-23-3) and collector current rating (100 mA). However, they operate with reduced collector-emitter breakdown voltage (30 V versus 32 V) and reduced transition frequency (100 MHz or 300 MHz versus 250 MHz). Direct substitution is possible only if the circuit design does not require the full 32 V breakdown voltage specification and operates within the reduced frequency response. Automotive applications require verification of AEC-Q101 compliance, which BC848 series parts do not carry.

Q: What is the difference between BCW60B,235 and BCW60B,215?

A: BCW60B,235 and BCW60B,215 are parametrically identical. Both devices are manufactured by Nexperia USA Inc. and share all electrical specifications, package type (TO-236AB), and certifications. The part number suffix reflects different tape and reel configurations for automated assembly. Selection between these parts depends on procurement and supply chain requirements.

Q: Is BC848BE6327HTSA1 suitable for new designs?

A: BC848BE6327HTSA1 carries Last Time Buy product status, indicating that manufacturing has been discontinued and inventory is limited. This part should not be selected for new designs or applications requiring long-term component availability. Active alternatives include BC848B-7-F or BC848C-7-F from Diodes Incorporated.

Q: What are the key electrical differences between BCW60B,235 and BC848 variants?

A: The primary electrical differences are collector-emitter breakdown voltage (BCW60B,235: 32 V; BC848 series: 30 V) and transition frequency (BCW60B,235: 250 MHz; BC848A/ALT1G/BLT1G/C RFG: 100 MHz; BC848B-7-F/C-7-F: 300 MHz). DC current gain varies across BC848 variants (110 to 420 at 2 mA, 5 V) compared to BCW60B,235 (180 at 2 mA, 5 V). Power dissipation ratings also differ (BCW60B,235: 250 mW; BC848 variants: 200 to 330 mW).

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, and REACH status is Unaffected across all alternatives.

Q: Can 2SD2657KT146 replace BCW60B,235?

A: No. 2SD2657KT146 is not suitable as a direct replacement. While both are NPN transistors in surface mount packages, 2SD2657KT146 operates with significantly higher collector current (1.5 A versus 100 mA), reduced collector-emitter breakdown voltage (30 V versus 32 V), and reduced power dissipation (200 mW versus 250 mW). The parametric mismatch makes this part unsuitable for circuits designed around the BCW60B,235 specifications.

Q: What packaging options are available for substitute parts?

A: All substitute parts use surface mount packages within the TO-236-3/SOT-23-3 family. Specific package designations include TO-236AB, SOT-23, SOT-23-3 (TO-236), SMT3, and PG-SOT23. These packages are mechanically compatible with standard surface mount assembly equipment and PCB footprints designed for TO-236-3 or SOT-23-3 components.

Q: Which substitute part offers the best frequency performance?

A: BC848B-7-F and BC848C-7-F from Diodes Incorporated offer the highest transition frequency at 300 MHz, compared to BCW60B,235 at 250 MHz. Both parts also provide 300 mW power dissipation. However, they operate with reduced collector-emitter breakdown voltage (30 V versus 32 V).

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