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BCW30,235 Equivalent & Substitute Parts
Part Overview
The BCW30,235 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the TO-236AB package. This component operates at a maximum collector current of 100 mA, collector-emitter breakdown voltage of 32 V, and maximum power dissipation of 250 mW. The device is qualified to AEC-Q101 automotive standards and carries Active product status. Equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements where electrical and mechanical parameters align with the original specification.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) Max | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 | V |
| Power - Max | 250 | mW |
| Frequency - Transition | 100 | MHz |
| DC Current Gain (hFE) Min @ Ic, Vce | 215 @ 2mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA | — |
| Current - Collector Cutoff (Max) | 100 | nA |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the BCW30,235 are classified into two categories based on electrical and mechanical parameter alignment:
Direct Equivalents share identical or functionally equivalent electrical specifications within the allowed tolerance ranges. These parts maintain the same collector current (100 mA), collector-emitter breakdown voltage (32 V), DC current gain (hFE ≥ 215 @ 2mA, 5V), and surface mount package configuration (TO-236-3 / SOT-23-3). Direct equivalents may differ in power dissipation rating (250 mW to 300 mW) and Vce saturation characteristics, provided the saturation voltage does not exceed application requirements.
Similar Parts operate within the same functional class but exhibit variations in one or more key parameters. These variations include reduced collector-emitter breakdown voltage (30 V instead of 32 V), increased collector current capability (1 A to 2 A), enhanced power dissipation (300 mW to 500 mW), or different package configurations (TSMT3, SMT3, SC-96). Similar parts are suitable for applications where the parameter variation does not compromise circuit performance and where the application can tolerate the modified electrical characteristics.
Substitution logic is based strictly on the following criteria:
- Transistor type (PNP)
- Collector current rating (100 mA minimum)
- Collector-emitter breakdown voltage (32 V minimum for direct equivalents; 30 V acceptable for similar parts)
- Surface mount package compatibility (TO-236-3 / SOT-23-3 preferred)
- Automotive grade and AEC-Q101 qualification (where applicable)
- RoHS3 compliance and MSL rating
Parameter Comparison
| Part Number | Manufacturer | Ic (Max) mA | Vce Breakdown (Max) V | Power (Max) mW | hFE (Min) @ Ic, Vce | Frequency MHz | Package | Automotive Grade | Classification |
|---|---|---|---|---|---|---|---|---|---|
| BCW30,235 | Nexperia USA Inc. | 100 | 32 | 250 | 215 @ 2mA, 5V | 100 | TO-236AB | Yes (AEC-Q101) | Main Part |
| BCW30,215 | Nexperia USA Inc. | 100 | 32 | 250 | 215 @ 2mA, 5V | 100 | TO-236AB | Yes (AEC-Q101) | Direct Equivalent |
| BCW30LT1G | onsemi | 100 | 32 | 300 | 215 @ 2mA, 5V | — | SOT-23-3 | No | Direct Equivalent |
| NSVBC858BLT1G | onsemi | 100 | 30 | 300 | 220 @ 2mA, 5V | 100 | SOT-23-3 | No | Similar Part |
| SBCW30LT1G | onsemi | 100 | 32 | 300 | 215 @ 2mA, 5V | — | SOT-23-3 | Yes (AEC-Q101) | Direct Equivalent |
| 2SB1695KT146 | Rohm Semiconductor | 1500 | 30 | 200 | 270 @ 100mA, 2V | 280 | SMT3 | No | Similar Part |
| 2SB1695TL | Rohm Semiconductor | 1500 | 30 | 500 | 270 @ 100mA, 2V | 280 | TSMT3 | No | Similar Part |
| 2SB1706TL | Rohm Semiconductor | 2000 | 30 | 500 | 270 @ 200mA, 2V | 280 | TSMT3 | No | Similar Part |
| 2SB1710TL | Rohm Semiconductor | 1000 | 30 | 500 | 270 @ 100mA, 2V | 320 | TSMT3 | No | Similar Part |
| 2STR2230 | STMicroelectronics | 1500 | 30 | 500 | 170 @ 500mA, 2V | 100 | SOT-23-3 | No | Similar Part |
| BC858A RFG | Taiwan Semiconductor Corporation | 100 | 30 | 200 | 125 @ 2mA, 5V | 100 | SOT-23 | No | Similar Part |
Engineering Selection Recommendations
Direct Equivalent Selection
BCW30,215 (Nexperia USA Inc.) is a direct equivalent offering identical electrical specifications and automotive AEC-Q101 qualification. This part maintains 100 mA collector current, 32 V breakdown voltage, 250 mW power rating, and 100 MHz transition frequency. Selection of BCW30,215 is appropriate for applications requiring exact parameter matching and automotive-grade compliance.
BCW30LT1G (onsemi) provides direct electrical equivalence with increased power dissipation (300 mW) and maintains 100 mA collector current and 32 V breakdown voltage. This part is suitable for applications where additional thermal margin is beneficial. However, automotive qualification is not specified for this variant.
SBCW30LT1G (onsemi) combines direct electrical equivalence with automotive AEC-Q101 qualification, matching the original part's grade status. This part offers 300 mW power dissipation and is appropriate for automotive applications requiring certified components.
Similar Part Selection
NSVBC858BLT1G (onsemi) operates at 30 V breakdown voltage (2 V reduction from the main part) with 100 mA collector current and 100 MHz transition frequency. This part is suitable for applications where 30 V breakdown voltage is acceptable and where non-automotive qualification is permissible.
2SB1710TL (Rohm Semiconductor) provides 1 A collector current capability with 30 V breakdown voltage and 320 MHz transition frequency. This part is appropriate for applications requiring higher current handling or enhanced frequency response, provided the 30 V voltage rating is compatible with circuit design.
2STR2230 (STMicroelectronics) offers 1.5 A collector current with 30 V breakdown voltage and 100 MHz transition frequency in SOT-23-3 package. This part is suitable for higher-current applications where the voltage reduction is acceptable.
BC858A RFG (Taiwan Semiconductor Corporation) maintains 100 mA collector current and 100 MHz transition frequency but operates at 30 V breakdown voltage with reduced DC current gain (125 @ 2mA, 5V). This part is appropriate only for applications where the lower current gain does not compromise circuit performance.
All substitute parts maintain RoHS3 compliance and MSL rating 1 (Unlimited). Selection should be based on specific application requirements regarding voltage rating, current capability, power dissipation, and automotive qualification status.
Frequently Asked Questions (FAQ)
Q: Can BCW30,215 be used as a direct replacement for BCW30,235?
A: Yes. BCW30,215 is a direct equivalent manufactured by Nexperia USA Inc. with identical electrical specifications: 100 mA collector current, 32 V breakdown voltage, 250 mW power rating, 100 MHz transition frequency, and AEC-Q101 automotive qualification. Pin configuration and package (TO-236AB) are identical.
Q: What is the difference between direct equivalents and similar parts?
A: Direct equivalents maintain all critical electrical parameters within the original specification: 100 mA collector current, 32 V breakdown voltage, and equivalent DC current gain. Similar parts may have reduced breakdown voltage (30 V), increased collector current (1 A to 2 A), or enhanced power dissipation (300 mW to 500 mW). Similar parts are suitable only when the parameter variation does not compromise circuit performance.
Q: Can I use NSVBC858BLT1G in place of BCW30,235?
A: NSVBC858BLT1G is a similar part with 30 V breakdown voltage instead of 32 V. Substitution is permissible only if the application circuit can tolerate the 2 V reduction in maximum voltage rating. All other electrical parameters (100 mA collector current, 100 MHz transition frequency, hFE ≥ 220) are compatible. Package compatibility (SOT-23-3) is maintained.
Q: Are all substitute parts automotive-qualified?
A: No. Only BCW30,215 and SBCW30LT1G carry AEC-Q101 automotive qualification matching the original BCW30,235. Other substitute parts do not specify automotive grade. For automotive applications, selection must be limited to AEC-Q101 qualified parts.
Q: What is the significance of the 30 V versus 32 V breakdown voltage difference?
A: The collector-emitter breakdown voltage (Vce) defines the maximum voltage the transistor can withstand between collector and emitter terminals. Parts rated at 30 V have a 2 V lower maximum rating than the 32 V original. Substitution with 30 V parts is acceptable only if circuit design ensures the collector-emitter voltage never exceeds 30 V under normal or fault conditions.
Q: Can I use 2SB1710TL (1 A collector current) in a circuit designed for BCW30,235 (100 mA)?
A: Yes, provided the circuit design does not depend on the 100 mA current limit for protection or biasing. The 2SB1710TL can safely handle 100 mA operation and offers higher current capability as a design margin. However, the 30 V breakdown voltage must be compatible with the application. The TSMT3 package differs from the original TO-236AB, requiring PCB layout verification.
Q: What does MSL rating 1 (Unlimited) mean?
A: Moisture Sensitivity Level (MSL) 1 indicates the component has unlimited shelf life and does not require special moisture control during storage or handling. All listed substitute parts maintain MSL 1 rating, matching the original BCW30,235.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed carry RoHS3 compliance status, matching the original BCW30,235. This ensures compatibility with environmental and regulatory requirements.
Q: What package options are available for BCW30,235 substitutes?
A: The original BCW30,235 uses TO-236AB package (also designated TO-236-3, SC-59, SOT-23-3). Direct equivalents BCW30,215, BCW30LT1G, and SBCW30LT1G maintain SOT-23-3 / TO-236 package compatibility. Similar parts from Rohm Semiconductor (2SB1695 series, 2SB1706TL, 2SB1710TL) use TSMT3 or SMT3 packages, requiring PCB layout modification. BC858A RFG uses SOT-23 package. Package selection must be verified against PCB design requirements.
Q: Can I substitute BCW30,235 with a higher-power part like 2SB1695TL (500 mW)?
A: Yes, if the application permits. The 2SB1695TL offers 1.5 A collector current and 500 mW power dissipation, providing design margin for higher-power applications. However, the 30 V breakdown voltage and TSMT3 package must be compatible with circuit design and PCB layout. The higher current gain (270 @ 100mA, 2V) may require bias network adjustment.
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