BCV27_D87Z Equivalent & Substitute Parts

Part Overview

The BCV27_D87Z is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at a maximum collector current of 1.2 A with a 30 V collector-emitter breakdown voltage and delivers 350 mW maximum power dissipation. The device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity.

Substiute Parts

BCV27_D87Z
onsemiIn Stock: 776BCV27_D87Z Datasheet
BCV27_D87Z
Current Part
MMBTA13LT1G
onsemiIn Stock: 152300MMBTA13LT1G Datasheet
MMBTA13LT1G
Similar
MMBTA13LT3G
onsemiIn Stock: 30770MMBTA13LT3G Datasheet
MMBTA13LT3G
Similar
MMBTA14LT1G
onsemiIn Stock: 125375MMBTA14LT1G Datasheet
MMBTA14LT1G
Similar
SMMBTA14LT1G
onsemiIn Stock: 15490SMMBTA14LT1G Datasheet
SMMBTA14LT1G
Similar
SMMBTA14LT3G
onsemiIn Stock: 1251SMMBTA14LT3G Datasheet
SMMBTA14LT3G
Similar
BCV27
onsemiIn Stock: 107900BCV27 Datasheet
BCV27
Parametric Equivalent
2SD1383KT146B
Rohm SemiconductorIn Stock: 575062SD1383KT146B Datasheet
2SD1383KT146B
Similar
2SD2142KT146
Rohm SemiconductorIn Stock: 191142SD2142KT146 Datasheet
2SD2142KT146
Similar
BCV27,215
Nexperia USA Inc.In Stock: 12208BCV27,215 Datasheet
BCV27,215
Similar
MMBTA14-7-F
Diodes IncorporatedIn Stock: 15486MMBTA14-7-F Datasheet
MMBTA14-7-F
Similar
PMBTA14,215
NXP SemiconductorsIn Stock: 99844PMBTA14,215 Datasheet
PMBTA14,215
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1.2 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1 V @ 100 µA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100 mA, 5 V
Power - Max 350 mW
Frequency - Transition 220 MHz
Operating Temperature Range -55 to 150 °C
Package / Case SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BCV27_D87Z is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor type: NPN - Darlington configuration
  • Package compatibility: SOT-23-3 surface mount form factor
  • Voltage rating: Minimum 30 V collector-emitter breakdown voltage
  • Current capability: Minimum 1.2 A collector current for direct replacement; lower current ratings (0.3 A to 0.5 A) acceptable for current-limited applications
  • DC current gain (hFE): Minimum 10000 at specified test conditions
  • Operating temperature range: -55°C to 150°C minimum

Substitution Categories:

Category 1 - Parametric Equivalent (Full Replacement): Parts with identical or superior electrical specifications across all critical parameters, enabling direct substitution without circuit modification.

Category 2 - Similar Substitute (Current-Limited Applications): Parts with reduced maximum collector current (0.3 A to 0.5 A) but matching voltage ratings, saturation characteristics, and package form factor. These substitutes are applicable in circuits where collector current does not exceed the substitute part's rating.

Category 3 - Cross-Manufacturer Alternatives: Parts from alternative manufacturers (Rohm Semiconductor, Nexperia USA Inc., Diodes Incorporated) meeting equivalent electrical and mechanical specifications with SOT-23-3 packaging.

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce(br) [V] Vce Sat @ Ib, Ic [V] hFE (Min) @ Ic, Vce Power [mW] fT [MHz] Package Status
BCV27_D87Z onsemi 1.2 30 1.0 @ 100µA, 100mA 20000 @ 100mA, 5V 350 220 SOT-23-3 Obsolete
BCV27 onsemi 1.2 30 1.0 @ 100µA, 100mA 20000 @ 100mA, 5V 350 220 SOT-23-3 Active
BCV27,215 Nexperia USA Inc. 0.5 30 1.0 @ 100µA, 100mA 20000 @ 100mA, 5V 250 220 SOT-23-3 Active
MMBTA14LT1G onsemi 0.3 30 1.5 @ 100µA, 100mA 20000 @ 100mA, 5V 225 125 SOT-23-3 Active
MMBTA14-7-F Diodes Incorporated 0.3 30 1.5 @ 100µA, 100mA 20000 @ 100mA, 5V 300 125 SOT-23-3 Active
MMBTA13LT1G onsemi 0.3 30 1.5 @ 100µA, 100mA 10000 @ 100mA, 5V 225 125 SOT-23-3 Active
2SD2142KT146 Rohm Semiconductor 0.3 30 1.5 @ 100µA, 100mA 10000 @ 100mA, 5V 200 200 SOT-23-3 Active
2SD1383KT146B Rohm Semiconductor 0.3 32 1.5 @ 400µA, 200mA 5000 @ 100mA, 5V 200 250 SOT-23-3 Active
SMMBTA14LT1G onsemi 0.3 30 1.5 @ 100µA, 100mA 20000 @ 100mA, 5V 225 125 SOT-23-3 Active
SMMBTA14LT3G onsemi 0.3 30 1.5 @ 100µA, 100mA 20000 @ 100mA, 5V 225 125 SOT-23-3 Active
MMBTA13LT3G onsemi 0.3 30 1.5 @ 100µA, 100mA 10000 @ 100mA, 5V 225 125 SOT-23-3 Active

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

The BCV27 (onsemi, active status) is the direct parametric equivalent to BCV27_D87Z. This part maintains identical electrical specifications including 1.2 A maximum collector current, 30 V breakdown voltage, 20000 hFE minimum gain, and 220 MHz transition frequency. The BCV27 is available in active production status with RoHS3 compliance and AEC-Q101 automotive qualification, ensuring supply chain continuity and regulatory compliance.

Current-Limited Substitutes (0.3 A to 0.5 A Range):

For applications where collector current does not exceed 0.5 A, the BCV27,215 (Nexperia USA Inc.) provides a suitable alternative with matching 30 V voltage rating, identical saturation characteristics, and 220 MHz transition frequency. This part carries AEC-Q101 automotive qualification and active production status.

For applications limited to 0.3 A collector current, the following parts are applicable:

  • MMBTA14LT1G, MMBTA14LT3G, SMMBTA14LT1G, SMMBTA14LT3G (onsemi): All maintain 20000 hFE minimum gain with 30 V voltage rating and SOT-23-3 packaging. These parts are available in active production with RoHS3 compliance.

  • MMBTA14-7-F (Diodes Incorporated): Provides 20000 hFE minimum gain with 30 V voltage rating and AEC-Q101 automotive qualification in active production status.

  • MMBTA13LT1G, MMBTA13LT3G (onsemi): Offer 10000 hFE minimum gain with 30 V voltage rating and active production status. These parts are suitable for applications where lower current gain is acceptable.

  • 2SD2142KT146 (Rohm Semiconductor): Delivers 10000 hFE minimum gain with 30 V voltage rating and 200 MHz transition frequency in active production status.

Cross-Manufacturer Alternative:

The 2SD1383KT146B (Rohm Semiconductor) provides a 32 V voltage rating with 250 MHz transition frequency, offering enhanced voltage margin. However, this part specifies 5000 hFE minimum gain and different saturation test conditions (400 µA, 200 mA), requiring circuit evaluation for compatibility.

Compliance and Production Status:

All recommended active substitutes carry RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity rating. The MMBTA14-7-F and BCV27,215 include AEC-Q101 automotive qualification, suitable for automotive and high-reliability applications.

Frequently Asked Questions (FAQ)

Q: Can the BCV27_D87Z be directly replaced with the BCV27?

A: Yes. The BCV27 is the parametric equivalent with identical electrical specifications: 1.2 A maximum collector current, 30 V breakdown voltage, 20000 hFE minimum gain, and 220 MHz transition frequency. Both use SOT-23-3 packaging. The BCV27 is in active production status, whereas BCV27_D87Z is obsolete.

Q: What is the difference between MMBTA14LT1G and MMBTA13LT1G?

A: Both parts share identical electrical specifications except for DC current gain. MMBTA14LT1G specifies 20000 hFE minimum gain, while MMBTA13LT1G specifies 10000 hFE minimum gain. Both are rated for 0.3 A maximum collector current and 30 V breakdown voltage. Selection depends on circuit requirements for current gain.

Q: Can I use a 0.3 A rated part in place of the 1.2 A BCV27_D87Z?

A: Substitution is limited to applications where the actual collector current does not exceed 0.3 A. The 0.3 A rated parts (MMBTA14LT1G, MMBTA13LT1G, 2SD2142KT146, 2SD1383KT146B, MMBTA14-7-F, SMMBTA14LT1G, SMMBTA14LT3G) are suitable for current-limited circuits. For applications requiring full 1.2 A capability, use BCV27 or BCV27,215 (0.5 A minimum).

Q: What packaging options are available for substitutes?

A: All listed substitutes use SOT-23-3 (TO-236-3, SC-59) surface mount packaging, matching the BCV27_D87Z form factor. Packaging variants include Cut Tape (CT) & Digi-Reel®, Tape & Reel (TR), and standard supplier device packages. Verify specific packaging availability with your supplier for procurement requirements.

Q: Are there automotive-qualified alternatives?

A: Yes. The MMBTA14-7-F (Diodes Incorporated) and BCV27,215 (Nexperia USA Inc.) both carry AEC-Q101 automotive qualification. These parts are suitable for automotive and high-reliability applications requiring formal qualification documentation.

Q: What is the significance of the hFE (DC current gain) specification?

A: DC current gain determines the base current required to achieve a specified collector current. Higher hFE values (20000) require less base drive current than lower values (10000 or 5000). Circuit design must account for the minimum hFE specification of the selected substitute to ensure proper biasing and switching performance.

Q: How do saturation voltage specifications differ among substitutes?

A: The BCV27_D87Z and most substitutes specify 1.0 V to 1.5 V saturation voltage at different test conditions. The 2SD1383KT146B specifies 1.5 V at 400 µA base current and 200 mA collector current, differing from the standard 100 µA, 100 mA test condition. Verify saturation characteristics match your circuit's operating point requirements.

Q: What is the operating temperature range for substitutes?

A: The BCV27_D87Z operates from -55°C to 150°C. Most active substitutes maintain this range. The 2SD2142KT146 and 2SD1383KT146B specify maximum junction temperature of 150°C without explicit minimum temperature, but are suitable for standard industrial and automotive temperature ranges.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed active substitutes carry RoHS3 compliance certification, meeting environmental and regulatory requirements for lead-free manufacturing and hazardous substance restrictions.

Request Quote (Ships tomorrow)