BCV26,215 Equivalent & Substitute Parts

Part Overview

The BCV26,215 is a PNP Darlington bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the TO-236AB package. This component operates at a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 250 mW. The device is qualified to AEC-Q101 automotive standards and maintains active product status with ROHS3 compliance.

Equivalent and substitute parts are identified based on matching electrical characteristics and mechanical compatibility within the PNP Darlington transistor category. Substitution becomes necessary when the primary part number reaches end-of-life status, inventory constraints occur, or alternative sourcing is required while maintaining circuit performance specifications.

Substiute Parts

BCV26,215
Nexperia USA Inc.In Stock: 3791BCV26,215 Datasheet
BCV26,215
Current Part
PMBTA64,215
Nexperia USA Inc.In Stock: 4068PMBTA64,215 Datasheet
PMBTA64,215
Direct
BCV26,235
NXP USA Inc.In Stock: 11013BCV26,235 Datasheet
BCV26,235
Parametric Equivalent
BCV26E6327HTSA1
Infineon TechnologiesIn Stock: 1149BCV26E6327HTSA1 Datasheet
BCV26E6327HTSA1
Direct
MMBTA64-7-F
Diodes IncorporatedIn Stock: 34991MMBTA64-7-F Datasheet
MMBTA64-7-F
Direct
MMBTA64LT1G
onsemiIn Stock: 23209MMBTA64LT1G Datasheet
MMBTA64LT1G
Direct
SMMBTA64LT1G
onsemiIn Stock: 35129SMMBTA64LT1G Datasheet
SMMBTA64LT1G
Direct
BCV26
onsemiIn Stock: 185204BCV26 Datasheet
BCV26
Similar
MMBTA63-7-F
Diodes IncorporatedIn Stock: 12488MMBTA63-7-F Datasheet
MMBTA63-7-F
Similar
MMBTA63LT1G
onsemiIn Stock: 152698MMBTA63LT1G Datasheet
MMBTA63LT1G
Similar
MMBTA64LT3G
onsemiIn Stock: 879MMBTA64LT3G Datasheet
MMBTA64LT3G
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1 V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V
Power - Max 250 mW
Frequency - Transition 220 MHz
Operating Temperature (TJ) 150 °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the BCV26,215 are classified into two categories based on electrical and mechanical compatibility:

Direct Equivalents maintain all critical electrical parameters within the same tolerance bands, including collector current (500 mA), collector-emitter breakdown voltage (30 V), DC current gain minimum (20000 @ 100mA, 5V), and surface mount package compatibility (TO-236-3 / SOT-23-3). These parts are interchangeable in circuit applications where the specified electrical characteristics are required.

Parametric Equivalents satisfy the core functional requirements of the circuit but may exhibit variations in secondary parameters such as transition frequency, saturation voltage, or maximum power dissipation. These parts remain functionally compatible when the application does not depend on the specific parameter variance.

Key substitution criteria:

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500 mA minimum
  • Voltage - Collector Emitter Breakdown (Max): 30 V minimum
  • DC Current Gain (hFE) (Min): 5000 or greater @ 100mA, 5V
  • Package / Case: TO-236-3, SC-59, SOT-23-3 compatible
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) (Max) V Vce Sat (Max) V hFE (Min) Power (Max) mW Freq (MHz) Package Status
BCV26,215 Nexperia USA Inc. 500 30 1.0 20000 250 220 TO-236AB Active
PMBTA64,215 Nexperia USA Inc. 500 30 1.5 20000 250 125 TO-236AB Active
BCV26,235 NXP USA Inc. 500 30 1.0 20000 250 220 SOT-23 Active
BCV26E6327HTSA1 Infineon Technologies 500 30 1.0 20000 360 200 PG-SOT23 Obsolete
MMBTA64-7-F Diodes Incorporated 500 30 1.5 20000 300 125 SOT-23-3 Active
MMBTA64LT1G onsemi 500 30 1.5 20000 225 125 SOT-23-3 Active
SMMBTA64LT1G onsemi 500 30 1.5 20000 225 125 SOT-23-3 Active
BCV26 onsemi 1200 30 1.0 20000 350 220 SOT-23-3 Active
MMBTA63-7-F Diodes Incorporated 500 30 1.5 10000 300 125 SOT-23-3 Active
MMBTA63LT1G onsemi 500 30 1.5 5000 225 125 SOT-23-3 Active
MMBTA64LT3G onsemi 500 30 1.5 20000 225 125 SOT-23-3 Active

Engineering Selection Recommendations

Direct Substitutes (Recommended Priority)

PMBTA64,215 (Nexperia USA Inc.) and MMBTA64LT1G (onsemi) are direct substitutes with active product status and AEC-Q101 qualification. Both maintain the 500 mA collector current, 30 V breakdown voltage, and 20000 minimum DC current gain. PMBTA64,215 is manufactured by the same supplier as the primary part. MMBTA64LT1G offers extended operating temperature range (-55°C to 150°C) and ROHS3 compliance. The primary difference is transition frequency (125 MHz versus 220 MHz in the original), which does not affect DC switching applications.

MMBTA64-7-F (Diodes Incorporated) and MMBTA64LT3G (onsemi) are functionally equivalent alternatives with active status and automotive qualification. Both support the full 500 mA collector current and 30 V breakdown voltage with matching DC current gain specifications.

Parametric Equivalents (Application-Dependent)

BCV26,235 (NXP USA Inc.) is a parametric equivalent with identical electrical characteristics to the primary part, including 220 MHz transition frequency and 1.0 V saturation voltage. The difference is packaging format (Bulk versus Tape & Reel) and supplier designation.

BCV26 (onsemi) supports higher collector current (1.2 A) and maintains 220 MHz transition frequency with 20000 minimum DC current gain. This part is suitable for applications requiring higher current capability while maintaining the same voltage and frequency characteristics.

Parts to Avoid

BCV26E6327HTSA1 (Infineon Technologies) carries obsolete product status and should not be selected for new designs or long-term supply assurance.

MMBTA63-7-F and MMBTA63LT1G exhibit reduced DC current gain (10000 and 5000 respectively, versus 20000 in the primary part). These parts are suitable only when the application circuit does not depend on the higher gain specification.

Frequently Asked Questions (FAQ)

Q: Can PMBTA64,215 replace BCV26,215 in all applications?

A: PMBTA64,215 is a direct substitute with identical collector current (500 mA), breakdown voltage (30 V), and DC current gain (20000 minimum). The transition frequency is lower (125 MHz versus 220 MHz), which does not affect DC switching circuits. Both parts are AEC-Q101 qualified and ROHS3 compliant. Substitution is valid for applications where the specified electrical parameters are the primary design criteria.

Q: What is the difference between MMBTA64LT1G and MMBTA64LT3G?

A: Both parts are manufactured by onsemi with identical electrical specifications: 500 mA collector current, 30 V breakdown voltage, 20000 minimum DC current gain, and 125 MHz transition frequency. The difference is in the tape reel configuration and packaging designation. Both are active products with ROHS3 compliance and suitable for direct substitution.

Q: Why does BCV26 (onsemi) have a higher collector current rating (1.2 A)?

A: The onsemi BCV26 is a higher-current variant of the same base product family. While it maintains the same voltage (30 V) and frequency (220 MHz) characteristics, the 1.2 A collector current rating makes it suitable for applications requiring higher current handling. This part is a parametric equivalent when the application does not exceed 500 mA collector current.

Q: Are MMBTA63 variants acceptable substitutes?

A: MMBTA63-7-F and MMBTA63LT1G have reduced DC current gain specifications (10000 and 5000 respectively, compared to 20000 in the primary part). These parts are functionally compatible only when the circuit design does not depend on the higher gain specification. Verify circuit performance before substitution.

Q: What is the significance of the TO-236AB versus SOT-23-3 package designation?

A: TO-236AB and SOT-23-3 are equivalent package designations for the same physical form factor (3-pin surface mount). Both refer to the same mechanical and electrical interface. Parts specified with either designation are mechanically and electrically interchangeable on the PCB.

Q: Should BCV26E6327HTSA1 be considered for new designs?

A: No. BCV26E6327HTSA1 carries obsolete product status. New designs should select from active products such as PMBTA64,215, MMBTA64LT1G, or MMBTA64-7-F to ensure long-term supply availability and manufacturing support.

Q: How do saturation voltage differences affect circuit performance?

A: The primary part (BCV26,215) specifies 1.0 V saturation voltage, while several substitutes specify 1.5 V. In switching applications where the transistor operates in saturation, the higher saturation voltage results in slightly increased voltage drop across the collector-emitter junction. This affects power dissipation and output voltage levels. Verify that the circuit design accommodates the higher saturation voltage before substitution.

Q: Are all listed parts AEC-Q101 qualified?

A: Not all parts carry explicit AEC-Q101 qualification in the provided specifications. PMBTA64,215, MMBTA64-7-F, and MMBTA63-7-F are specified as AEC-Q101 qualified. MMBTA64LT1G, SMMBTA64LT1G, MMBTA63LT1G, and MMBTA64LT3G do not list AEC-Q101 qualification in the provided data. For automotive applications requiring AEC-Q101 compliance, select from the qualified parts.

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